Overview
The AT45DB641E-SHN-T, produced by Adesto Technologies, is a 64-Mbit serial-interface sequential access Flash memory device. It is part of the System Enhancing class of code and data storage solutions, designed with an advanced dual SRAM buffer architecture. This architecture makes it highly efficient for data logging applications. The device operates within a voltage range of 1.7V to 3.6V, making it versatile for various system designs.
Key Specifications
| Parameter | Specification |
|---|---|
| Memory Capacity | 64 Mbit (69,206,016 bits) |
| Page Size | 256 bytes or 264 bytes per page |
| Number of Pages | 32,768 pages |
| Voltage Range | 1.7V to 3.6V |
| Interface | Serial Peripheral Interface (SPI) compatible, supports SPI modes 0 and 3 |
| Clock Speed | Up to 85MHz, low-power read option up to 15MHz |
| SRAM Buffers | Two fully independent SRAM data buffers (256/264 bytes each) |
| Erase Options | Page Erase (256/264 bytes), Block Erase (2KB), Sector Erase (256KB) |
| Package Options | 8-pad Ultra-thin DFN, 8-pad Very-thin DFN, 9-ball BGA, 44-ball dBGA |
Key Features
- Single 1.7V to 3.6V power supply for erase, program, and read operations
- Controllable Dual R/W SRAM buffers for maximum flexibility
- Standard block architecture with added 256-byte page erase for energy-efficient data logging
- Byte-write provides Serial EEPROM functionality in a Serial NOR Flash device
- Extended Vcc operation allows the system memory to operate over the entire voltage range
- Ultra-deep power down mode for low power consumption
- Comprehensive security and unique ID features protect the device from outside tampering
- Supports RapidS serial interface for high-speed operation
- Continuous read capability through the entire array
- Clock-to-output time (tV) of 8ns maximum
Applications
The AT45DB641E-SHN-T is ideally suited for a wide variety of digital voice, image, program code, and data storage applications. It is particularly useful in systems requiring efficient data logging, such as industrial control systems, automotive systems, and consumer electronics. The device's advanced features and low power consumption make it a suitable choice for battery-powered devices and applications where data integrity and security are critical.
Q & A
- What is the memory capacity of the AT45DB641E-SHN-T?
The AT45DB641E-SHN-T has a memory capacity of 64 Mbit (69,206,016 bits).
- What is the voltage range for the AT45DB641E-SHN-T?
The device operates within a voltage range of 1.7V to 3.6V.
- What types of interfaces does the AT45DB641E-SHN-T support?
The device supports the Serial Peripheral Interface (SPI) and is compatible with SPI modes 0 and 3.
- What are the erase options available for the AT45DB641E-SHN-T?
The device supports Page Erase (256/264 bytes), Block Erase (2KB), and Sector Erase (256KB).
- What is the purpose of the dual SRAM buffers in the AT45DB641E-SHN-T?
The dual SRAM buffers provide maximum flexibility by allowing data to be received while reprogramming the main memory array.
- What are the package options available for the AT45DB641E-SHN-T?
The device is available in 8-pad Ultra-thin DFN, 8-pad Very-thin DFN, 9-ball BGA, and 44-ball dBGA packages.
- Does the AT45DB641E-SHN-T support high-speed operation?
Yes, the device supports the RapidS serial interface for high-speed operation.
- What is the clock speed of the AT45DB641E-SHN-T?
The device can operate up to 85MHz and has a low-power read option up to 15MHz.
- Does the AT45DB641E-SHN-T have any power-saving features?
Yes, the device features an ultra-deep power down mode for low power consumption.
- What kind of security features does the AT45DB641E-SHN-T offer?
The device includes comprehensive security and unique ID features to protect it from outside tampering.
