Overview
The MT29F2G08ABAEAWP:E TR is a 2Gb NAND Flash memory device manufactured by Micron Technology Inc. This component is part of Micron's NAND Flash product family and is designed to provide high-density storage solutions. It features single-level cell (SLC) technology, which offers higher endurance and reliability compared to multi-level cell (MLC) devices. The device is available in a 48-pin TSOP (Thin Small Outline Package) and is suitable for a wide range of applications requiring non-volatile memory.
Key Specifications
| Specification | Value |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Part Number | MT29F2G08ABAEAWP:E TR |
| Memory Type | Non-Volatile NAND Flash |
| Memory Size | 2Gb (256M x 8) |
| Package | 48-pin TSOP-I (Tape & Reel) |
| Operating Voltage Range | 2.7V to 3.6V |
| Operating Temperature Range | 0°C to +70°C |
| Page Size (x8) | 2112 bytes (2048 + 64 bytes) |
| Page Size (x16) | 1056 words (1024 + 32 words) |
| Block Size | 64 pages (128K + 4K bytes) |
| Plane Size | 2 planes x 1024 blocks per plane |
| Read Page Time | 25µs |
| Program Page Time | 200µs (TYP: 1.8V, 3.3V) |
| Erase Block Time | 700µs (TYP) |
| Endurance | 100,000 PROGRAM/ERASE cycles |
| Data Retention | 10 years |
Key Features
- Open NAND Flash Interface (ONFI) 1.0-compliant: Ensures compatibility with industry standards.
- Single-Level Cell (SLC) Technology: Offers higher endurance and reliability.
- Asynchronous I/O Performance: Supports tRC/tWC of 20ns (3.3V) and 25ns (1.8V).
- Advanced Command Set: Includes program page cache mode, read page cache mode, one-time programmable (OTP) mode, two-plane commands, and interleaved die (LUN) operations.
- Internal Data Move Operations: Supports data move within the plane from which data is read.
- Operation Status Byte and Ready/Busy# Signal: Provides software and hardware methods for detecting operation completion and status.
- Write Protect Feature: Allows write protection for the entire device.
Applications
The MT29F2G08ABAEAWP:E TR NAND Flash memory is suitable for various applications requiring high-density, non-volatile storage. These include:
- Embedded Systems: Ideal for use in industrial, automotive, and consumer electronics where reliable storage is critical.
- Industrial Control Systems: Used in systems that require robust and enduring memory solutions.
- Automotive Electronics: Suitable for automotive applications due to its industrial temperature range and high reliability.
- Consumer Electronics: Used in devices such as set-top boxes, digital TVs, and other consumer electronics requiring non-volatile memory.
Q & A
- What is the memory size of the MT29F2G08ABAEAWP:E TR?
The memory size is 2Gb (256M x 8).
- What type of package does the MT29F2G08ABAEAWP:E TR come in?
The device is packaged in a 48-pin TSOP-I (Tape & Reel).
- What is the operating voltage range of the MT29F2G08ABAEAWP:E TR?
The operating voltage range is 2.7V to 3.6V.
- What is the endurance of the MT29F2G08ABAEAWP:E TR?
The device has an endurance of 100,000 PROGRAM/ERASE cycles.
- What is the data retention period of the MT29F2G08ABAEAWP:E TR?
The data retention period is 10 years.
- Is the MT29F2G08ABAEAWP:E TR compliant with any industry standards?
Yes, it is Open NAND Flash Interface (ONFI) 1.0-compliant.
- What are the typical read, program, and erase times for the MT29F2G08ABAEAWP:E TR?
The typical times are 25µs for read, 200µs for program, and 700µs for erase.
- Does the MT29F2G08ABAEAWP:E TR support any advanced command sets?
Yes, it supports advanced commands such as program page cache mode, read page cache mode, and one-time programmable (OTP) mode.
- How does the MT29F2G08ABAEAWP:E TR indicate operation completion?
The device uses an operation status byte and a Ready/Busy# signal to indicate operation completion.
- Can the MT29F2G08ABAEAWP:E TR be write-protected?
Yes, the device supports write protection for the entire device.
