Overview
The BD138-10-BP is a PNP bipolar junction transistor (BJT) manufactured by Micro Commercial Components (MCC). This transistor is part of MCC's extensive portfolio of discrete semiconductor components, known for their competitive pricing and high-quality performance. The BD138-10-BP is designed to meet various application needs, particularly in areas requiring reliable and efficient transistor operation.
Key Specifications
Product Attribute | Attribute Value |
---|---|
Manufacturer | Micro Commercial Components (MCC) |
Voltage - Collector Emitter Breakdown (Max) | 60 V |
Vce Saturation (Max) @ Ib, Ic | 500mV @ 50mA, 500mA |
Transistor Type | PNP |
Supplier Device Package | TO-126 |
Package / Case | TO-225AA, TO-126-3 |
Power - Max | 1.25 W |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
DC Current Gain (hFE) (Min) @ Ic, Vce | 63 @ 150mA, 2V |
Current - Collector Cutoff (Max) | 100nA (ICBO) |
Current - Collector (Ic) (Max) | 1.5 A |
RoHs Status | ROHS3 Compliant |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Key Features
- High Collector Emitter Breakdown Voltage: Up to 60 V, making it suitable for a wide range of applications.
- Low Vce Saturation: 500mV @ 50mA, 500mA, ensuring efficient operation.
- High DC Current Gain: Minimum of 63 @ 150mA, 2V, providing reliable amplification.
- Through Hole Mounting: Easy to integrate into various circuit designs.
- Wide Operating Temperature Range: From -55°C to 150°C (TJ), suitable for diverse environmental conditions.
- ROHS3 Compliant: Environmentally friendly and compliant with current regulations.
Applications
- Amplifier Circuits: Suitable for use in audio and general-purpose amplifier circuits due to its high gain and low saturation voltage.
- Switching Circuits: Can be used in switching applications where high collector current and low Vce saturation are required.
- Automotive Electronics: Applicable in automotive systems due to its robust operating temperature range and reliability.
- Industrial Control Systems: Used in various industrial control circuits requiring stable and efficient transistor performance.
Q & A
- What is the collector-emitter breakdown voltage of the BD138-10-BP transistor?
The collector-emitter breakdown voltage is up to 60 V.
- What is the maximum collector current (Ic) of the BD138-10-BP?
The maximum collector current (Ic) is 1.5 A.
- What is the Vce saturation voltage of the BD138-10-BP?
The Vce saturation voltage is 500mV @ 50mA, 500mA.
- What is the DC current gain (hFE) of the BD138-10-BP?
The minimum DC current gain (hFE) is 63 @ 150mA, 2V.
- What is the operating temperature range of the BD138-10-BP?
The operating temperature range is from -55°C to 150°C (TJ).
- Is the BD138-10-BP ROHS compliant?
Yes, the BD138-10-BP is ROHS3 compliant.
- What is the mounting type of the BD138-10-BP?
The mounting type is Through Hole.
- What is the maximum power dissipation of the BD138-10-BP?
The maximum power dissipation is 1.25 W.
- What package types are available for the BD138-10-BP?
The available package types are TO-225AA and TO-126-3.
- What is the collector cutoff current (ICBO) of the BD138-10-BP?
The collector cutoff current (ICBO) is 100nA.