2N5416UAC
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Microchip Technology 2N5416UAC

Manufacturer No:
2N5416UAC
Manufacturer:
Microchip Technology
Package:
Bulk
Description:
POWER BJT
Delivery:
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iso45001
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Product Introduction

Overview

The 2N5416UAC is a silicon PNP transistor designed and manufactured by Microchip Technology. This transistor is tailored for consumer and industrial line-operated applications, offering robust performance and reliability. It is part of the 2N5416 series, known for its versatility in various electronic circuits.

Key Specifications

Parameter Value Units
Collector-Base Voltage (VCBO) 350 V
Collector-Emitter Voltage (VCEO) 300 V
Emitter-Base Voltage (VEBO) 6.0 V
Continuous Collector Current (IC) 1.0 A
Continuous Base Current (IB) 0.5 A
Power Dissipation (PD) 1.0 W
Operating and Storage Junction Temperature (TJ, Tstg) -65 to +200 °C
Collector-Emitter Saturation Voltage (VCE(SAT)) 2.0 V
Base-Emitter Saturation Voltage (VBE(SAT)) 1.5 V
Current Gain (hFE) 30 to 120

Key Features

  • High Voltage Capability: The 2N5416UAC can handle high collector-base and collector-emitter voltages, making it suitable for a wide range of applications.
  • High Current Handling: With a continuous collector current of 1.0 A, this transistor is capable of handling significant current loads.
  • Wide Temperature Range: It operates over a temperature range of -65°C to +200°C, ensuring reliability in diverse environmental conditions.
  • Low Saturation Voltages: The transistor features low collector-emitter and base-emitter saturation voltages, which help in minimizing power losses.
  • High Current Gain: The current gain (hFE) ranges from 30 to 120, providing a high level of amplification.

Applications

The 2N5416UAC is designed for use in various consumer and industrial applications, including:

  • Line-operated circuits
  • Amplifier circuits
  • Switching circuits
  • Power supply circuits
  • Automotive and aerospace systems due to its compliance with military standards (e.g., MIL-PRF-19500/485).

Q & A

  1. What is the collector-base voltage rating of the 2N5416UAC?

    The collector-base voltage (VCBO) is rated at 350 V.

  2. What is the maximum continuous collector current for the 2N5416UAC?

    The maximum continuous collector current (IC) is 1.0 A.

  3. What is the operating temperature range for the 2N5416UAC?

    The operating and storage junction temperature range is -65°C to +200°C.

  4. What is the typical collector-emitter saturation voltage for the 2N5416UAC?

    The typical collector-emitter saturation voltage (VCE(SAT)) is 2.0 V.

  5. What are the common applications of the 2N5416UAC?

    The 2N5416UAC is commonly used in line-operated circuits, amplifier circuits, switching circuits, and power supply circuits.

  6. Does the 2N5416UAC comply with any military standards?

    Yes, it complies with MIL-PRF-19500/485.

  7. What is the package type of the 2N5416UAC?

    The 2N5416UAC is available in TO-205AA or TO-5-3 metal can packages.

  8. What is the power dissipation rating of the 2N5416UAC?

    The power dissipation (PD) is rated at 1.0 W.

  9. What is the current gain (hFE) range for the 2N5416UAC?

    The current gain (hFE) ranges from 30 to 120.

  10. Is the 2N5416UAC still in production?

    Yes, the 2N5416UAC is currently in production.

Product Attributes

Transistor Type:PNP
Current - Collector (Ic) (Max):1 A
Voltage - Collector Emitter Breakdown (Max):300 V
Vce Saturation (Max) @ Ib, Ic:2V @ 5mA, 50mA
Current - Collector Cutoff (Max):1mA
DC Current Gain (hFE) (Min) @ Ic, Vce:30 @ 50mA, 10V
Power - Max:750 mW
Frequency - Transition:- 
Operating Temperature:-65°C ~ 200°C (TJ)
Mounting Type:Surface Mount
Package / Case:4-SMD, No Lead
Supplier Device Package:UA
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