Overview
The 1N5821US/TR is a Schottky diode produced by Microchip Technology. This component is part of the 1N5820-22 series, which employs the Schottky Barrier principle in a large area metal-to-silicon power diode. It is designed for high-efficiency and low-power loss applications, making it ideal for use in low-voltage, high-frequency inverters, free-wheeling diodes, and polarity protection diodes.
Key Specifications
| Attribute | Value |
|---|---|
| Manufacturer | Microchip Technology |
| Category | Diodes - Rectifiers - Single |
| Diode Type | Schottky |
| Voltage - DC Reverse (Vr) (Max) | 30 V |
| Current - Average Rectified (Io) | 3 A |
| Voltage - Forward (Vf) (Max) @ If | 500 mV @ 3 A |
| Reverse Recovery Time (trr) | Fast Recovery = 200mA (Io) |
| Current - Reverse Leakage @ Vr | 100 μA @ 30 V |
| Mounting Type | Surface Mount |
| Package / Case | SQ-MELF, B |
| Operating Temperature - Junction | -65 ℃ ~ 125 ℃ |
| Packaging | Tape & Reel (TR) |
Key Features
- Extremely low forward voltage (VF) of 500 mV @ 3 A, contributing to high efficiency and low power loss.
- Fast recovery time, making it suitable for high-frequency applications.
- Low stored charge and majority carrier conduction, enhancing performance in switching applications.
- Surface mount package (SQ-MELF) for compact and efficient board design.
- Wide operating temperature range of -65 ℃ to 125 ℃, ensuring reliability in various environments.
Applications
- Low-voltage, high-frequency inverters.
- Free-wheeling diodes.
- Polarity protection diodes.
- Power supply circuits requiring high efficiency and low voltage drop.
- Switch-mode power supplies and DC-DC converters.
Q & A
- What is the maximum DC reverse voltage of the 1N5821US/TR?
The maximum DC reverse voltage is 30 V.
- What is the average rectified forward current of the 1N5821US/TR?
The average rectified forward current is 3 A.
- What is the forward voltage drop of the 1N5821US/TR at 3 A?
The forward voltage drop is 500 mV at 3 A.
- What is the reverse recovery time of the 1N5821US/TR?
The reverse recovery time is characterized by fast recovery = 200mA (Io).
- What is the operating temperature range of the 1N5821US/TR?
The operating temperature range is -65 ℃ to 125 ℃.
- What type of packaging does the 1N5821US/TR use?
The 1N5821US/TR is packaged in Tape & Reel (TR) format.
- What are some common applications of the 1N5821US/TR?
Common applications include low-voltage, high-frequency inverters, free-wheeling diodes, and polarity protection diodes.
- What is the significance of the Schottky Barrier principle in the 1N5821US/TR?
The Schottky Barrier principle provides extremely low forward voltage and low power loss, making it highly efficient.
- How does the 1N5821US/TR handle thermal management?
The component has a thermal resistance, junction-to-ambient (RJA) of 28 °C/W, and detailed thermal management guidelines are provided in the datasheet.
- What is the typical use case for the 1N5821US/TR in power supply circuits?
It is typically used in power supply circuits requiring high efficiency and low voltage drop, such as switch-mode power supplies and DC-DC converters.
