BC857CB5000
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Infineon Technologies BC857CB5000

Manufacturer No:
BC857CB5000
Manufacturer:
Infineon Technologies
Package:
Bulk
Description:
BIPOLAR TRANSISTOR TRANSISTOR
Delivery:
Payment:
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Product Introduction

Overview

The BC857CB5000 is a PNP silicon AF (Audio Frequency) transistor manufactured by Infineon Technologies. This transistor is designed for use in AF input stages and driver applications, offering high performance and reliability. It is part of the BC857 series, which is known for its high current gain and low noise characteristics.

Key Specifications

Parameter Symbol Min Typ Max Unit
Collector-Emitter Breakdown Voltage V(BR)CEO -45 - -30 V
Collector-Base Breakdown Voltage V(BR)CBO -50 - -30 V
Emitter-Base Breakdown Voltage V(BR)EBO -5.0 - -5.0 V
Collector Cutoff Current ICBO - - 15 nA nA
DC Current Gain hFE 220 - 420 -
Collector-Emitter Saturation Voltage VCE(sat) - - 0.65 V V
Base-Emitter Saturation Voltage VBE(sat) - - 0.9 V V
Transition Frequency fT - 250 MHz - MHz

Key Features

  • High Current Gain: The BC857CB5000 offers high DC current gain, making it suitable for applications requiring high amplification.
  • Low Collector-Emitter Saturation Voltage: This feature ensures low voltage drop across the collector-emitter junction, which is beneficial for reducing power consumption and heat generation.
  • Low Noise: The transistor exhibits low noise characteristics between 30 Hz and 15 kHz, making it ideal for audio frequency applications.
  • Pb-free (RoHS Compliant) Package: The transistor is packaged in a lead-free, RoHS compliant package, ensuring environmental compliance.
  • Complementary Types: The BC857 series has complementary NPN types (BC847...-BC850...), allowing for balanced circuit designs.

Applications

  • AF Input Stages: The BC857CB5000 is well-suited for use in audio frequency input stages due to its low noise and high current gain.
  • Driver Applications: It can be used as a driver transistor in various electronic circuits, including audio amplifiers and other signal processing applications.

Q & A

  1. What is the collector-emitter breakdown voltage of the BC857CB5000?

    The collector-emitter breakdown voltage is typically -45 V to -30 V.

  2. What is the DC current gain of the BC857CB5000?

    The DC current gain (hFE) ranges from 220 to 420.

  3. What is the collector-emitter saturation voltage of the BC857CB5000?

    The collector-emitter saturation voltage is typically up to 0.65 V.

  4. Is the BC857CB5000 Pb-free and RoHS compliant?
  5. What are the complementary types of the BC857CB5000?

    The complementary NPN types are BC847...-BC850....

  6. What is the transition frequency of the BC857CB5000?

    The transition frequency (fT) is typically 250 MHz.

  7. What are the typical applications of the BC857CB5000?
  8. What is the emitter-base breakdown voltage of the BC857CB5000?
  9. What is the collector-base breakdown voltage of the BC857CB5000?
  10. What is the base-emitter saturation voltage of the BC857CB5000?

Product Attributes

Transistor Type:- 
Current - Collector (Ic) (Max):- 
Voltage - Collector Emitter Breakdown (Max):- 
Vce Saturation (Max) @ Ib, Ic:- 
Current - Collector Cutoff (Max):- 
DC Current Gain (hFE) (Min) @ Ic, Vce:- 
Power - Max:- 
Frequency - Transition:- 
Operating Temperature:- 
Mounting Type:- 
Package / Case:- 
Supplier Device Package:- 
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Similar Products

Part Number BC857CB5000 BC857BB5000
Manufacturer Infineon Technologies Infineon Technologies
Product Status Active Active
Transistor Type - PNP
Current - Collector (Ic) (Max) - 100 mA
Voltage - Collector Emitter Breakdown (Max) - 45 V
Vce Saturation (Max) @ Ib, Ic - 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max) - 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce - 220 @ 2mA, 5V
Power - Max - 330 mW
Frequency - Transition - 250MHz
Operating Temperature - 150°C (TJ)
Mounting Type - Surface Mount
Package / Case - TO-236-3, SC-59, SOT-23-3
Supplier Device Package - PG-SOT23

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