BAV170E6327
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Infineon Technologies BAV170E6327

Manufacturer No:
BAV170E6327
Manufacturer:
Infineon Technologies
Package:
Bulk
Description:
RECTIFIER DIODE
Delivery:
Payment:
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iso45001
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Product Introduction

Overview

The BAV170E6327 is a switching diode array produced by Infineon Technologies. This component is designed for high-performance applications requiring fast switching capabilities. It features a common cathode, double diode configuration, making it suitable for a variety of electronic circuits. The diode is packaged in a SOT23 case, which is compact and suitable for surface mount technology (SMT) assembly.

Key Specifications

ParameterValue
ManufacturerInfineon Technologies
Type of DiodeSwitching
MountingSMD (Surface Mount)
Max. Off-State Voltage (DC Reverse)80 V / 85 V
Load Current0.2 A
Semiconductor StructureCommon Cathode, Double
Features of Semiconductor DevicesFast Switching
CaseSOT23
Power Dissipation0.25 W
Forward Voltage1.25 V
Operating Temperature Range-65°C to 150°C

Key Features

  • Fast switching capabilities, making it suitable for high-frequency applications.
  • Common cathode, double diode configuration for efficient circuit design.
  • Compact SOT23 package for surface mount technology, reducing board space.
  • Low forward voltage of 1.25 V, minimizing power loss.
  • Wide operating temperature range from -65°C to 150°C, ensuring reliability in various environments.

Applications

The BAV170E6327 switching diode array is versatile and can be used in a variety of applications, including:

  • General-purpose switching circuits.
  • High-frequency signal processing.
  • Power supply circuits requiring fast diode switching.
  • Automotive and industrial electronics where reliability and high performance are critical.
  • Consumer electronics such as audio and video equipment.

Q & A

  1. What is the maximum off-state voltage of the BAV170E6327?
    The maximum off-state voltage (DC reverse) is 80 V / 85 V.
  2. What is the load current rating of the BAV170E6327?
    The load current rating is 0.2 A.
  3. What is the semiconductor structure of the BAV170E6327?
    The semiconductor structure is a common cathode, double diode configuration.
  4. What is the case type of the BAV170E6327?
    The case type is SOT23.
  5. What is the power dissipation of the BAV170E6327?
    The power dissipation is 0.25 W.
  6. What is the forward voltage of the BAV170E6327?
    The forward voltage is 1.25 V.
  7. What is the operating temperature range of the BAV170E6327?
    The operating temperature range is from -65°C to 150°C.
  8. Is the BAV170E6327 suitable for surface mount technology?
    Yes, it is suitable for surface mount technology (SMT) due to its SOT23 package.
  9. What are some typical applications of the BAV170E6327?
    Typical applications include general-purpose switching circuits, high-frequency signal processing, power supply circuits, automotive and industrial electronics, and consumer electronics.
  10. Where can I purchase the BAV170E6327?
    The BAV170E6327 can be purchased from various electronic component distributors such as Digi-Key, TME, and other authorized Infineon Technologies distributors.

Product Attributes

Diode Configuration:1 Pair Common Cathode
Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):80 V
Current - Average Rectified (Io) (per Diode):200mA (DC)
Voltage - Forward (Vf) (Max) @ If:1.25 V @ 150 mA
Speed:Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr):1.5 µs
Current - Reverse Leakage @ Vr:5 nA @ 75 V
Operating Temperature - Junction:150°C (Max)
Mounting Type:Surface Mount
Package / Case:TO-236-3, SC-59, SOT-23-3
Supplier Device Package:PG-SOT23
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