MUR120-T
  • Share:

Diodes Incorporated MUR120-T

Manufacturer No:
MUR120-T
Manufacturer:
Diodes Incorporated
Package:
Tape & Reel (TR)
Description:
DIODE GEN PURP 200V 1A DO41
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The MUR120-T is a 1.0A super-fast glass passivated rectifier diode manufactured by Diodes Incorporated. This component is designed for high-efficiency applications, featuring a fast recovery time and low forward voltage drop. The MUR120-T is housed in a DO-41 plastic package and is RoHS compliant, making it suitable for a wide range of electronic systems.

Key Specifications

CharacteristicSymbolValueUnit
Peak Repetitive Reverse VoltageVRRM200V
Working Peak Reverse VoltageVRWM200V
RMS Reverse VoltageVR(RMS)140V
Average Rectified Output Current @ TL = 130°CIO1.0A
Non-Repetitive Peak Forward Surge CurrentIFSM35A
Forward Voltage @ IF = 1.0A, TJ = 25°CVFM0.875V
Forward Voltage @ IF = 1.0A, TJ = 150°CVFM0.710V
Peak Reverse Current @ TJ = 25°CIRM2.0μA
Reverse Recovery Timetrr25ns
Typical Junction CapacitanceCj27pF
Typical Thermal Resistance, Junction to LeadRθJL50K/W
Operating and Storage Temperature RangeTj, TSTG-55 to +150°C

Key Features

  • Glass Passivated Die Construction: Ensures reliability and durability.
  • Super-Fast Recovery Time: Enhances efficiency in high-frequency applications.
  • Low Forward Voltage Drop and High Current Capability: Optimizes performance in various power circuits.
  • Surge Overload Rating to 35A Peak: Provides robust protection against transient surges.
  • Lead Free Finish, RoHS Compliant: Meets environmental and regulatory standards.
  • Molded Plastic Case with UL Flammability Classification Rating 94V-0: Ensures safety and compliance with industry standards.
  • Moisture Sensitivity Level 1 per J-STD-020C: Suitable for a variety of environmental conditions.
  • Bright Tin Finish, Solderable per MIL-STD-202, Method 208: Facilitates easy assembly and soldering.

Applications

The MUR120-T rectifier diode is suitable for a wide range of applications, including:

  • Power Supplies: Due to its high current capability and low forward voltage drop, it is ideal for use in power supply circuits.
  • Switching Regulators: The super-fast recovery time makes it suitable for high-frequency switching applications.
  • Motor Control and Drive Systems: Its surge overload rating and high current handling capability make it a good choice for motor control systems.
  • General Rectification in Electronic Systems: It can be used in various rectification needs where high efficiency and reliability are required.

Q & A

  1. What is the peak repetitive reverse voltage of the MUR120-T?
    The peak repetitive reverse voltage (VRRM) of the MUR120-T is 200V.
  2. What is the average rectified output current of the MUR120-T at 130°C?
    The average rectified output current (IO) at 130°C is 1.0A.
  3. What is the non-repetitive peak forward surge current of the MUR120-T?
    The non-repetitive peak forward surge current (IFSM) is 35A.
  4. What is the forward voltage drop of the MUR120-T at 1.0A and 25°C?
    The forward voltage drop (VFM) at 1.0A and 25°C is 0.875V.
  5. Is the MUR120-T RoHS compliant?
    Yes, the MUR120-T is RoHS compliant.
  6. What is the typical reverse recovery time of the MUR120-T?
    The typical reverse recovery time (trr) is 25ns.
  7. What is the operating temperature range of the MUR120-T?
    The operating and storage temperature range is -55 to +150°C.
  8. What type of package does the MUR120-T come in?
    The MUR120-T is housed in a DO-41 plastic package.
  9. Is the MUR120-T still in production?
    No, the MUR120-T is obsolete and no longer manufactured.
  10. What are some possible substitutes for the MUR120-T?
    One possible substitute is the 1N3611 from Microchip Technology.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):200 V
Current - Average Rectified (Io):1A
Voltage - Forward (Vf) (Max) @ If:875 mV @ 1 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):25 ns
Current - Reverse Leakage @ Vr:2 µA @ 200 V
Capacitance @ Vr, F:- 
Mounting Type:Through Hole
Package / Case:DO-204AL, DO-41, Axial
Supplier Device Package:DO-41
Operating Temperature - Junction:-55°C ~ 150°C
0 Remaining View Similar

In Stock

-
40

Please send RFQ , we will respond immediately.

Similar Products

Part Number MUR120-T MUR140-T MUR160-T MUR120-TP
Manufacturer Diodes Incorporated Diodes Incorporated Diodes Incorporated Micro Commercial Co
Product Status Obsolete Active Active Obsolete
Diode Type Standard Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 200 V 400 V 600 V 200 V
Current - Average Rectified (Io) 1A 1A 1A 1A
Voltage - Forward (Vf) (Max) @ If 875 mV @ 1 A 1.25 V @ 1 A 1.25 V @ 1 A 1.35 V @ 1 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 25 ns 75 ns 75 ns 45 ns
Current - Reverse Leakage @ Vr 2 µA @ 200 V 5 µA @ 400 V 5 µA @ 600 V 5 µA @ 200 V
Capacitance @ Vr, F - - - 20pF @ 4V, 1MHz
Mounting Type Through Hole Through Hole Through Hole Through Hole
Package / Case DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial
Supplier Device Package DO-41 DO-41 DO-41 DO-41
Operating Temperature - Junction -55°C ~ 150°C -65°C ~ 175°C -65°C ~ 175°C -55°C ~ 150°C

Related Product By Categories

BAT46WH,115
BAT46WH,115
Nexperia USA Inc.
DIODE SCHOT 100V 250MA SOD123F
PMEG3050EP,115
PMEG3050EP,115
Nexperia USA Inc.
DIODE SCHOTTKY 30V 5A SOD128
PMEG4010ETR/B115
PMEG4010ETR/B115
NXP USA Inc.
RECTIFIER DIODE, SCHOTTKY
BAS16H,115
BAS16H,115
Nexperia USA Inc.
DIODE GP 100V 215MA SOD123F
STPSC4H065D
STPSC4H065D
STMicroelectronics
DIODE SCHOTTKY 650V 4A TO220AC
BAS116LT1G
BAS116LT1G
onsemi
DIODE GEN PURP 75V 200MA SOT23-3
MURS110T3G
MURS110T3G
onsemi
DIODE GEN PURP 100V 1A SMB
NSR0340P2T5G
NSR0340P2T5G
onsemi
DIODE SCHOTTKY 40V 200MA SOD923
1N4148WQ-13-F
1N4148WQ-13-F
Diodes Incorporated
SWITCHING DIODE SOD123 T&R 10K
BAS21_D87Z
BAS21_D87Z
onsemi
DIODE GEN PURP 250V 200MA SOT23
NRVBS360BT3G
NRVBS360BT3G
onsemi
DIODE SCHOTTKY 60V 3A SMB
NRVBD360VT4G
NRVBD360VT4G
onsemi
DIODE SCHOTTKY 60V 3A DPAK

Related Product By Brand

BAV70LP-7
BAV70LP-7
Diodes Incorporated
DIODE ARRAY GP 75V 150MA 3XDFN
BAS40-06-7-F
BAS40-06-7-F
Diodes Incorporated
DIODE ARRAY SCHOTTKY 40V SOT23-3
BAV23S-7
BAV23S-7
Diodes Incorporated
DIODE ARRAY GP 200V 400MA SOT23
LL4148-7
LL4148-7
Diodes Incorporated
DIODE GP 75V 150MA MINI MELF
BZX84C3V3S-7-F-79
BZX84C3V3S-7-F-79
Diodes Incorporated
DIODE ZENER
BZX84C33-7-F
BZX84C33-7-F
Diodes Incorporated
DIODE ZENER 33V 300MW SOT23-3
BZX84C15W-7-F
BZX84C15W-7-F
Diodes Incorporated
DIODE ZENER 15V 200MW SOT323
BZX84C15Q-13-F
BZX84C15Q-13-F
Diodes Incorporated
ZENER DIODE SOT23 T&R 10K
BZX84B5V6Q-7-F
BZX84B5V6Q-7-F
Diodes Incorporated
TIGHT TOLERANCE ZENER SOT23 T&R
BZX84C24-7
BZX84C24-7
Diodes Incorporated
DIODE ZENER 24V 300MW SOT23-3
BSS8402DW-7
BSS8402DW-7
Diodes Incorporated
MOSFET N/P-CH 60V/50V SC70-6
74HCT595S16-13
74HCT595S16-13
Diodes Incorporated
HC HIGH PIN COUNT SO-16