BC807-40-7
  • Share:

Diodes Incorporated BC807-40-7

Manufacturer No:
BC807-40-7
Manufacturer:
Diodes Incorporated
Package:
Tape & Reel (TR)
Description:
TRANS PNP 45V 0.5A SOT23-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BC807-40-7 is a PNP small signal transistor manufactured by Diodes Incorporated. It is part of the BC807 series, which includes the BC807-16, BC807-25, and BC807-40 models. This transistor is designed for various applications, including switching and audio frequency (AF) amplifier roles. The BC807-40-7 is known for its epitaxial planar die construction and is fully RoHS compliant, making it suitable for a wide range of electronic devices.

Key Specifications

Characteristic Symbol Min Typ Max Unit Test Condition
Collector-Base Breakdown Voltage BVCBO - - -50 V IC = -100µA
Collector-Emitter Breakdown Voltage BVCEO - - -45 V IC = -10mA
Emitter-Base Breakdown Voltage BVEBO - - -5 V IE = -100µA
DC Current Gain (hFE) hFE 250 - 600 - VCE = -1.0V, IC = -100mA
Collector-Emitter Saturation Voltage VCE(sat) - - -0.7 V IC = -500mA, IB = -50mA
Base-Emitter Voltage VBE(on) - - -1.2 V VCE = -1.0V, IC = -300mA
Gain Bandwidth Product fT 100 - - MHz VCE = -5.0V, IC = -10mA, f = 50MHz
Collector-Base Capacitance CCBO - - 12 pF VCB = -10V, f = 1.0MHz
Case Type - - - SOT23 - -
Maximum Collector Current IC - - 500 mA -
Maximum Collector-Emitter Voltage VCE - - 45 V -

Key Features

  • Ideally suited for automatic insertion due to its SOT23 package.
  • Epitaxial planar die construction for enhanced performance.
  • Complementary NPN types available (BC817 series).
  • Totally lead-free and fully RoHS compliant.
  • Halogen and antimony free, making it a 'green' device.
  • Suitable for automotive applications requiring specific change control and manufactured in IATF 16949 certified facilities.

Applications

  • Switching applications due to its high current gain and low saturation voltage.
  • Audio frequency (AF) amplifier applications.
  • Automotive electronics requiring high reliability and compliance with automotive standards.
  • General-purpose amplification and switching in various electronic devices.

Q & A

  1. What is the maximum collector-emitter voltage for the BC807-40-7 transistor?

    The maximum collector-emitter voltage (VCE) for the BC807-40-7 is 45V.

  2. What is the typical DC current gain (hFE) for the BC807-40-7?

    The typical DC current gain (hFE) for the BC807-40-7 is between 250 and 600 at VCE = -1.0V and IC = -100mA.

  3. What is the case type of the BC807-40-7 transistor?

    The BC807-40-7 transistor is packaged in a SOT23 case.

  4. Is the BC807-40-7 RoHS compliant?

    Yes, the BC807-40-7 is totally lead-free and fully RoHS compliant.

  5. What are the complementary NPN types available for the BC807 series?

    The complementary NPN types available for the BC807 series are the BC817 series.

  6. What are the typical applications for the BC807-40-7 transistor?

    The BC807-40-7 is typically used in switching and AF amplifier applications, as well as in automotive electronics.

  7. What is the maximum collector current for the BC807-40-7 transistor?

    The maximum collector current (IC) for the BC807-40-7 is 500mA.

  8. Is the BC807-40-7 suitable for automotive applications?

    Yes, the BC807-40-7 is suitable for automotive applications requiring specific change control and is manufactured in IATF 16949 certified facilities.

  9. What is the gain bandwidth product (fT) for the BC807-40-7 transistor?

    The gain bandwidth product (fT) for the BC807-40-7 is 100MHz at VCE = -5.0V, IC = -10mA, and f = 50MHz.

  10. What is the collector-base capacitance (CCBO) for the BC807-40-7 transistor?

    The collector-base capacitance (CCBO) for the BC807-40-7 is 12pF at VCB = -10V and f = 1.0MHz.

Product Attributes

Transistor Type:PNP
Current - Collector (Ic) (Max):500 mA
Voltage - Collector Emitter Breakdown (Max):45 V
Vce Saturation (Max) @ Ib, Ic:700mV @ 50mA, 500mA
Current - Collector Cutoff (Max):100nA
DC Current Gain (hFE) (Min) @ Ic, Vce:250 @ 100mA, 1V
Power - Max:310 mW
Frequency - Transition:100MHz
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-236-3, SC-59, SOT-23-3
Supplier Device Package:SOT-23-3
0 Remaining View Similar

In Stock

-
398

Please send RFQ , we will respond immediately.

Same Series
BC807-40Q-7-F
BC807-40Q-7-F
TRANS PNP 45V 0.5A SOT23-3
BC807-25-7-F
BC807-25-7-F
TRANS PNP 45V 0.5A SOT23-3
BC807-40-7-F
BC807-40-7-F
TRANS PNP 45V 0.5A SOT23-3
BC807-16-7-F
BC807-16-7-F
TRANS PNP 45V 0.5A SOT23-3
BC807-16-7
BC807-16-7
TRANS PNP 45V 0.5A SOT23-3
BC807-25-7
BC807-25-7
TRANS PNP 45V 0.5A SOT23-3

Similar Products

Part Number BC807-40-7 BC807-40W-7
Manufacturer Diodes Incorporated Diodes Incorporated
Product Status Discontinued at Digi-Key Active
Transistor Type PNP PNP
Current - Collector (Ic) (Max) 500 mA 500 mA
Voltage - Collector Emitter Breakdown (Max) 45 V 45 V
Vce Saturation (Max) @ Ib, Ic 700mV @ 50mA, 500mA 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max) 100nA 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce 250 @ 100mA, 1V 250 @ 100mA, 1V
Power - Max 310 mW 200 mW
Frequency - Transition 100MHz 100MHz
Operating Temperature -55°C ~ 150°C (TJ) -65°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3 SC-70, SOT-323
Supplier Device Package SOT-23-3 SOT-323

Related Product By Categories

PMBT5550,235
PMBT5550,235
Nexperia USA Inc.
TRANS NPN 140V 0.3A TO236AB
BC848B-TP
BC848B-TP
Micro Commercial Co
TRANS NPN 30V 0.1A SOT23
PBSS5160T,215
PBSS5160T,215
Nexperia USA Inc.
TRANS PNP 60V 1A TO236AB
SMMBT2222ALT3G
SMMBT2222ALT3G
onsemi
TRANS NPN 40V 0.6A SOT23-3
MPS751-D26Z
MPS751-D26Z
onsemi
TRANS PNP 60V 2A TO92-3
BD140G
BD140G
onsemi
TRANS PNP 80V 1.5A TO126
BULD742CT4
BULD742CT4
STMicroelectronics
TRANS NPN 400V 4A DPAK
BCW60D
BCW60D
Fairchild Semiconductor
TRANS NPN 32V 0.1A SOT23-3
BFU910F115
BFU910F115
NXP USA Inc.
SMALL SIGNAL BIPOLAR TRANSISTOR
TIP122TU
TIP122TU
Fairchild Semiconductor
TRANS NPN DARL 100V 5A TO220-3
BLF278
BLF278
Ampleon USA Inc.
RF PFET, 2-ELEMENT, VERY HIGH FR
MMBT3904TT1
MMBT3904TT1
onsemi
TRANS NPN 40V 200MA SOT416

Related Product By Brand

BAS40-06Q-7-F
BAS40-06Q-7-F
Diodes Incorporated
SCHOTTKY DIODE SOT23 T&R 3K
MBR10100CT-G1
MBR10100CT-G1
Diodes Incorporated
DIODE SCHOTT 100V 5A TO220AB
BAS40-7-F
BAS40-7-F
Diodes Incorporated
DIODE SCHOTTKY 40V 200MA SOT23-3
BAV21WQ-7-F
BAV21WQ-7-F
Diodes Incorporated
HIVOLT SWITCHING DIODE BVR > 100
BZX84C20TS-7-F
BZX84C20TS-7-F
Diodes Incorporated
DIODE ZENER ARRAY 20V SOT363
BZT52HC6V8WF-7
BZT52HC6V8WF-7
Diodes Incorporated
DIODE ZENER 6.8V 375MW SOD123F
BZX84B16Q-7-F
BZX84B16Q-7-F
Diodes Incorporated
TIGHT TOLERANCE ZENER SOT23 T&R
BZX84C3V9T-7-F
BZX84C3V9T-7-F
Diodes Incorporated
DIODE ZENER 3.9V 150MW SOT523
BC817-40-7-F
BC817-40-7-F
Diodes Incorporated
TRANS NPN 45V 0.5A SOT23-3
MMBTA63-7-F
MMBTA63-7-F
Diodes Incorporated
TRANS PNP DARL 30V 0.5A SOT23-3
BC846BLP4-7B
BC846BLP4-7B
Diodes Incorporated
TRANS NPN 65V 0.1A 3DFN
74LVC1G08QSE-7
74LVC1G08QSE-7
Diodes Incorporated
IC GATE AND 1CH 2-INP SOT353