BAS21-7-F
  • Share:

Diodes Incorporated BAS21-7-F

Manufacturer No:
BAS21-7-F
Manufacturer:
Diodes Incorporated
Package:
Tape & Reel (TR)
Description:
DIODE GEN PURP 200V 200MA SOT23
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BAS21-7-F is a high-performance surface mount fast switching diode manufactured by Diodes Incorporated. This diode is part of the BAS21 series and is designed for general-purpose switching applications. It features a high conductance and fast switching speed, making it ideal for various electronic circuits. The BAS21-7-F is packaged in a SOT-23 (SC-59, TO-236) package, which is suitable for automated insertion and surface mount assembly.

Key Specifications

Parameter Value Unit
Reverse Voltage - Max (Vrrm) 250 V
Reverse Recovery Time - Max 50 ns
Power Dissipation 250 mW
Average Forward Current - Max 200 mA
Peak Current - Max 2.5 A
Package Style SOT-23 (SC-59, TO-236)
Mounting Method Surface Mount
Operating and Storage Temperature Range -65 to +150 °C
Thermal Resistance Junction to Ambient Air 500 °C/W

Key Features

  • Fast switching speed
  • Surface mount package ideally suited for automated insertion
  • For general purpose switching applications
  • High conductance
  • Power dissipation of 250 mW
  • Thermal resistance junction to ambient air of 500 °C/W
  • Operating and storage temperature range of -65 to +150 °C
  • Totally lead-free and fully RoHS compliant
  • Halogen and antimony free, 'Green' device
  • Qualified to AEC-Q101 standards for high reliability
  • PPAP capable

Applications

The BAS21-7-F is suitable for a wide range of general-purpose switching applications, including but not limited to:

  • Automotive systems requiring high reliability (AEC-Q101 qualified)
  • Consumer electronics
  • Industrial control systems
  • Power supplies and DC-DC converters
  • Communication equipment

Q & A

  1. What is the maximum reverse voltage of the BAS21-7-F?

    The maximum reverse voltage (Vrrm) of the BAS21-7-F is 250 V.

  2. What is the reverse recovery time of the BAS21-7-F?

    The reverse recovery time of the BAS21-7-F is 50 ns.

  3. What is the power dissipation of the BAS21-7-F?

    The power dissipation of the BAS21-7-F is 250 mW.

  4. What is the average forward current of the BAS21-7-F?

    The average forward current of the BAS21-7-F is 200 mA.

  5. What is the peak current of the BAS21-7-F?

    The peak current of the BAS21-7-F is 2.5 A.

  6. What is the package style of the BAS21-7-F?

    The BAS21-7-F is packaged in a SOT-23 (SC-59, TO-236) package.

  7. Is the BAS21-7-F RoHS compliant?

    Yes, the BAS21-7-F is totally lead-free and fully RoHS compliant.

  8. What are the operating and storage temperature ranges of the BAS21-7-F?

    The operating and storage temperature range of the BAS21-7-F is -65 to +150 °C.

  9. Is the BAS21-7-F qualified to any automotive standards?

    Yes, the BAS21-7-F is qualified to AEC-Q101 standards for high reliability.

  10. What is the thermal resistance junction to ambient air of the BAS21-7-F?

    The thermal resistance junction to ambient air of the BAS21-7-F is 500 °C/W).

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):200 V
Current - Average Rectified (Io):200mA
Voltage - Forward (Vf) (Max) @ If:1.25 V @ 200 mA
Speed:Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr):50 ns
Current - Reverse Leakage @ Vr:100 nA @ 200 V
Capacitance @ Vr, F:5pF @ 0V, 1MHz
Mounting Type:Surface Mount
Package / Case:TO-236-3, SC-59, SOT-23-3
Supplier Device Package:SOT-23-3
Operating Temperature - Junction:-65°C ~ 150°C
0 Remaining View Similar

In Stock

$0.16
3,776

Please send RFQ , we will respond immediately.

Same Series
BAS21-7-F
BAS21-7-F
DIODE GEN PURP 200V 200MA SOT23
BAS19-7-F
BAS19-7-F
DIODE GP 100V 200MA SOT23-3

Similar Products

Part Number BAS21-7-F BAS21W-7-F BAS21Q-7-F BAS21T-7-F BAS20-7-F
Manufacturer Diodes Incorporated Diodes Incorporated Diodes Incorporated Diodes Incorporated Diodes Incorporated
Product Status Active Active Active Active Active
Diode Type Standard Standard Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 200 V 200 V 200 V 200 V 150 V
Current - Average Rectified (Io) 200mA 200mA 200mA 200mA 200mA
Voltage - Forward (Vf) (Max) @ If 1.25 V @ 200 mA 1.25 V @ 200 mA 1.25 V @ 200 mA 1.25 V @ 200 mA 1.25 V @ 200 mA
Speed Small Signal =< 200mA (Io), Any Speed Small Signal =< 200mA (Io), Any Speed Small Signal =< 200mA (Io), Any Speed Small Signal =< 200mA (Io), Any Speed Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr) 50 ns 50 ns 50 ns 50 ns 50 ns
Current - Reverse Leakage @ Vr 100 nA @ 200 V 100 nA @ 200 V 100 nA @ 200 V 100 nA @ 200 V 100 nA @ 150 V
Capacitance @ Vr, F 5pF @ 0V, 1MHz 5pF @ 0V, 1MHz 5pF @ 0V, 1MHz 5pF @ 0V, 1MHz 5pF @ 0V, 1MHz
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3 SC-70, SOT-323 TO-236-3, SC-59, SOT-23-3 SOT-523 SOT-23-3 Flat Leads
Supplier Device Package SOT-23-3 SOT-323 SOT-23-3 SOT-523 SOT-23F
Operating Temperature - Junction -65°C ~ 150°C -65°C ~ 150°C -65°C ~ 150°C -65°C ~ 150°C -65°C ~ 150°C

Related Product By Categories

BAT43W_R1_00001
BAT43W_R1_00001
Panjit International Inc.
SOD-123, SKY
BAS40WS_R1_00001
BAS40WS_R1_00001
Panjit International Inc.
SOD-323, SKY
STPS160AFN
STPS160AFN
STMicroelectronics
60 V, 1 A POWER SCHOTTKY RECTIFI
STPS8H100DEE-TR
STPS8H100DEE-TR
STMicroelectronics
DIODE SCHOTTKY 100V 8A POWERFLAT
SS16FP
SS16FP
onsemi
DIODE SCHOTTKY 60V 1A SOD123HE
STTH2R02AFY
STTH2R02AFY
STMicroelectronics
DIODE GEN PURP 200V 2A SOD128
1N4148WHE3-TP
1N4148WHE3-TP
Micro Commercial Co
400MW SWITCHING DIODES SOD-123
BAV21W-HE3-18
BAV21W-HE3-18
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 200V 250MA SOD123
BAV21WS RRG
BAV21WS RRG
Taiwan Semiconductor Corporation
DIODE GEN PURP 250V 200MA SOD323
BAS16T-TP
BAS16T-TP
Micro Commercial Co
DIODE GEN PURP 85V 75MA SOT523
BAS16-F2-0000HF
BAS16-F2-0000HF
Yangzhou Yangjie Electronic Technology Co.,Ltd
DIODE GEN PURP 75V 200MA SOT23
1N4148,133
1N4148,133
NXP USA Inc.
DIODE GEN PURP 100V 200MA ALF2

Related Product By Brand

BAV23CQ-7-F
BAV23CQ-7-F
Diodes Incorporated
HIVOLT SWITCHING DIODE BVR > 100
BZX84C20TS-7-F
BZX84C20TS-7-F
Diodes Incorporated
DIODE ZENER ARRAY 20V SOT363
BZT52HC5V1WF-7
BZT52HC5V1WF-7
Diodes Incorporated
DIODE ZENER 5.1V 375MW SOD123F
BZT52HC6V2WF-7
BZT52HC6V2WF-7
Diodes Incorporated
DIODE ZENER 6.2V 375MW SOD123F
BZX84C39-7
BZX84C39-7
Diodes Incorporated
DIODE ZENER 39V 300MW SOT23-3
BZX84C7V5-7-F-79
BZX84C7V5-7-F-79
Diodes Incorporated
DIODE ZENER 7.5V 300MW SOT23
BCX5616TA
BCX5616TA
Diodes Incorporated
TRANS NPN 80V 1A SOT89-3
BC817-16-7
BC817-16-7
Diodes Incorporated
TRANS NPN 45V 0.8A SOT23-3
MMBF170-7-F
MMBF170-7-F
Diodes Incorporated
MOSFET N-CH 60V 500MA SOT23-3
2N7002W-7
2N7002W-7
Diodes Incorporated
MOSFET N-CH 60V 115MA SOT-323
2N7002E-7-G
2N7002E-7-G
Diodes Incorporated
MOSFET N-CH 60V SOT23
2N7002KX-7
2N7002KX-7
Diodes Incorporated
MOSFET N-CH 60V SOT23-3