1N5821-T
  • Share:

Diodes Incorporated 1N5821-T

Manufacturer No:
1N5821-T
Manufacturer:
Diodes Incorporated
Package:
Tape & Reel (TR)
Description:
DIODE SCHOTTKY 30V 3A DO201AD
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The 1N5821-T is a Schottky Barrier Rectifier produced by Diodes Incorporated. This component is designed for high-efficiency power conversion and switching applications. It features a low forward voltage drop, making it ideal for reducing power losses in various electronic systems. The 1N5821-T is packaged in a DO-201AD axial case, suitable for through-hole mounting.

Key Specifications

ParameterSymbolValueUnit
Maximum Repetitive Peak Reverse VoltageVRRM30V
Maximum RMS VoltageVRMS21V
Maximum DC Blocking VoltageVDC30V
Non-repetitive Peak Reverse VoltageVRSM36V
Maximum Average Forward Rectified CurrentIF(AV)3.0A
Peak Forward Surge CurrentIFSM80A
Maximum Instantaneous Forward Voltage at 3AVF0.500V
Maximum Average Reverse Current at Rated DC Blocking VoltageIR2.0mA
Operating Junction and Storage Temperature RangeTJ, TSTG-65 to +150°C
Package / CaseDO-201AD, Axial
Mounting TypeThrough Hole

Key Features

  • Low forward voltage drop of 0.500 V at 3 A, reducing power losses in power conversion systems.
  • High surge current capability of 80 A, ensuring robust performance under transient conditions.
  • Wide operating temperature range from -65°C to +150°C, making it suitable for various environmental conditions.
  • Fast recovery time, contributing to efficient switching operations.
  • Through-hole mounting in a DO-201AD axial package, facilitating easy integration into existing designs.

Applications

The 1N5821-T Schottky Barrier Rectifier is versatile and can be used in a variety of applications, including:

  • Power supplies and DC-DC converters where low forward voltage drop is crucial for efficiency.
  • Switching power systems, such as SMPS (Switch-Mode Power Supplies), due to its fast recovery characteristics.
  • Automotive and industrial power systems where high reliability and robustness are required.
  • General-purpose rectification in electronic circuits where high current handling and low voltage drop are necessary.

Q & A

  1. What is the maximum repetitive peak reverse voltage of the 1N5821-T?
    The maximum repetitive peak reverse voltage (VRRM) is 30 V.
  2. What is the maximum average forward rectified current of the 1N5821-T?
    The maximum average forward rectified current (IF(AV)) is 3.0 A.
  3. What is the peak forward surge current of the 1N5821-T?
    The peak forward surge current (IFSM) is 80 A.
  4. What is the maximum instantaneous forward voltage of the 1N5821-T at 3 A?
    The maximum instantaneous forward voltage (VF) at 3 A is 0.500 V.
  5. What is the operating temperature range of the 1N5821-T?
    The operating junction and storage temperature range is from -65°C to +150°C.
  6. What type of package does the 1N5821-T come in?
    The 1N5821-T comes in a DO-201AD axial package.
  7. What is the mounting type of the 1N5821-T?
    The mounting type is through-hole.
  8. What are some common applications of the 1N5821-T?
    Common applications include power supplies, DC-DC converters, switching power systems, automotive and industrial power systems, and general-purpose rectification.
  9. What is the reverse leakage current of the 1N5821-T at 30 V?
    The reverse leakage current (IR) at 30 V is 2 mA.
  10. Is the 1N5821-T RoHS compliant?
    Yes, the 1N5821-T is RoHS compliant.

Product Attributes

Diode Type:Schottky
Voltage - DC Reverse (Vr) (Max):30 V
Current - Average Rectified (Io):3A
Voltage - Forward (Vf) (Max) @ If:500 mV @ 3 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):- 
Current - Reverse Leakage @ Vr:2 mA @ 30 V
Capacitance @ Vr, F:- 
Mounting Type:Through Hole
Package / Case:DO-201AD, Axial
Supplier Device Package:DO-201AD
Operating Temperature - Junction:-65°C ~ 150°C
0 Remaining View Similar

In Stock

-
269

Please send RFQ , we will respond immediately.

Same Series
1N5822-T
1N5822-T
DIODE SCHOTTKY 40V 3A DO201AD
1N5820-T
1N5820-T
DIODE SCHOTTKY 20V 3A DO201AD
1N5820-B
1N5820-B
DIODE SCHOTTKY 20V 3A DO201AD
1N5821-B
1N5821-B
DIODE SCHOTTKY 30V 3A DO201AD
1N5822-B
1N5822-B
DIODE SCHOTTKY 40V 3A DO201AD

Similar Products

Part Number 1N5821-T 1N5821-TP 1N5822-T 1N5820-T 1N5821-B
Manufacturer Diodes Incorporated Micro Commercial Co Diodes Incorporated Diodes Incorporated Diodes Incorporated
Product Status Obsolete Active Obsolete Obsolete Obsolete
Diode Type Schottky Schottky Schottky Schottky Schottky
Voltage - DC Reverse (Vr) (Max) 30 V 30 V 40 V 20 V 30 V
Current - Average Rectified (Io) 3A 3A 3A 3A 3A
Voltage - Forward (Vf) (Max) @ If 500 mV @ 3 A 500 mV @ 3 A 525 mV @ 3 A 475 mV @ 3 A 500 mV @ 3 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) - - - - -
Current - Reverse Leakage @ Vr 2 mA @ 30 V 500 µA @ 30 V 2 mA @ 40 V 2 mA @ 20 V 2 mA @ 30 V
Capacitance @ Vr, F - 200pF @ 4V, 1MHz - - -
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole
Package / Case DO-201AD, Axial DO-201AD, Axial DO-201AD, Axial DO-201AD, Axial DO-201AD, Axial
Supplier Device Package DO-201AD DO-201AD DO-201AD DO-201AD DO-201AD
Operating Temperature - Junction -65°C ~ 150°C -55°C ~ 125°C -65°C ~ 150°C -65°C ~ 150°C -65°C ~ 150°C

Related Product By Categories

MBRM120LT3G
MBRM120LT3G
onsemi
DIODE SCHOTTKY 20V 1A POWERMITE
PMEG3015EH,115
PMEG3015EH,115
Nexperia USA Inc.
DIODE SCHOTTKY 30V 1.5A SOD123F
BAS20WTHE3-TP
BAS20WTHE3-TP
Micro Commercial Co
DIODE GEN PURP 150V 200MA SOT323
PMEG4020EPASX
PMEG4020EPASX
Nexperia USA Inc.
DIODE SCHOTTKY 40V 2A DFN2020D-3
PMEG2015EPK,315
PMEG2015EPK,315
NXP USA Inc.
NOW NEXPERIA PMEG2015EPK - RECTI
BYV29-500,127
BYV29-500,127
WeEn Semiconductors
DIODE GEN PURP 500V 9A TO220AC
STTH30RQ06WL
STTH30RQ06WL
STMicroelectronics
600 V, 30 A SOFT ULTRAFAST RECOV
BAT43WS RRG
BAT43WS RRG
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 30V 200MA SOD323F
PMEG2010AEBF
PMEG2010AEBF
Nexperia USA Inc.
DIODE SCHOTTKY 20V 1A SOD523
MUR440G
MUR440G
onsemi
DIODE GEN PURP 400V 4A DO201AD
MURD330T4G
MURD330T4G
onsemi
DIODE GEN PURP 300V 3A DPAK
RB751S-40GJTE61
RB751S-40GJTE61
Rohm Semiconductor
DIODE SCHOTTKY SMD

Related Product By Brand

BAV23AQ-7-F
BAV23AQ-7-F
Diodes Incorporated
HIVOLT SWITCHING DIODE BVR > 100
BAT54C-7-G
BAT54C-7-G
Diodes Incorporated
DIODE SCHOTTKY SOT23
BAS40T-7-F
BAS40T-7-F
Diodes Incorporated
DIODE SCHOTTKY 40V 200MA SOT523
BAS16T-7-F
BAS16T-7-F
Diodes Incorporated
DIODE GP 85V 75MA SOT523
BZX84C3V3S-7-F
BZX84C3V3S-7-F
Diodes Incorporated
DIODE ZENER ARRAY 3.3V SOT363
BZX84C13-7-F
BZX84C13-7-F
Diodes Incorporated
DIODE ZENER 13V 300MW SOT23-3
BZX84B30Q-7-F
BZX84B30Q-7-F
Diodes Incorporated
TIGHT TOLERANCE ZENER SOT23 T&R
BZX84C8V2T-7-F
BZX84C8V2T-7-F
Diodes Incorporated
DIODE ZENER 8.2V 150MW SOT523
BZX84C39-7
BZX84C39-7
Diodes Incorporated
DIODE ZENER 39V 300MW SOT23-3
BC807-16W-7
BC807-16W-7
Diodes Incorporated
TRANS PNP 45V 0.5A SOT323
BC857BFZ-7B
BC857BFZ-7B
Diodes Incorporated
TRANS PNP 45V 0.1A 3DFN
74HC04T14-13
74HC04T14-13
Diodes Incorporated
IC INVERTER 6CH 1-INP 14TSSOP