1N5821-T
  • Share:

Diodes Incorporated 1N5821-T

Manufacturer No:
1N5821-T
Manufacturer:
Diodes Incorporated
Package:
Tape & Reel (TR)
Description:
DIODE SCHOTTKY 30V 3A DO201AD
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The 1N5821-T is a Schottky Barrier Rectifier produced by Diodes Incorporated. This component is designed for high-efficiency power conversion and switching applications. It features a low forward voltage drop, making it ideal for reducing power losses in various electronic systems. The 1N5821-T is packaged in a DO-201AD axial case, suitable for through-hole mounting.

Key Specifications

ParameterSymbolValueUnit
Maximum Repetitive Peak Reverse VoltageVRRM30V
Maximum RMS VoltageVRMS21V
Maximum DC Blocking VoltageVDC30V
Non-repetitive Peak Reverse VoltageVRSM36V
Maximum Average Forward Rectified CurrentIF(AV)3.0A
Peak Forward Surge CurrentIFSM80A
Maximum Instantaneous Forward Voltage at 3AVF0.500V
Maximum Average Reverse Current at Rated DC Blocking VoltageIR2.0mA
Operating Junction and Storage Temperature RangeTJ, TSTG-65 to +150°C
Package / CaseDO-201AD, Axial
Mounting TypeThrough Hole

Key Features

  • Low forward voltage drop of 0.500 V at 3 A, reducing power losses in power conversion systems.
  • High surge current capability of 80 A, ensuring robust performance under transient conditions.
  • Wide operating temperature range from -65°C to +150°C, making it suitable for various environmental conditions.
  • Fast recovery time, contributing to efficient switching operations.
  • Through-hole mounting in a DO-201AD axial package, facilitating easy integration into existing designs.

Applications

The 1N5821-T Schottky Barrier Rectifier is versatile and can be used in a variety of applications, including:

  • Power supplies and DC-DC converters where low forward voltage drop is crucial for efficiency.
  • Switching power systems, such as SMPS (Switch-Mode Power Supplies), due to its fast recovery characteristics.
  • Automotive and industrial power systems where high reliability and robustness are required.
  • General-purpose rectification in electronic circuits where high current handling and low voltage drop are necessary.

Q & A

  1. What is the maximum repetitive peak reverse voltage of the 1N5821-T?
    The maximum repetitive peak reverse voltage (VRRM) is 30 V.
  2. What is the maximum average forward rectified current of the 1N5821-T?
    The maximum average forward rectified current (IF(AV)) is 3.0 A.
  3. What is the peak forward surge current of the 1N5821-T?
    The peak forward surge current (IFSM) is 80 A.
  4. What is the maximum instantaneous forward voltage of the 1N5821-T at 3 A?
    The maximum instantaneous forward voltage (VF) at 3 A is 0.500 V.
  5. What is the operating temperature range of the 1N5821-T?
    The operating junction and storage temperature range is from -65°C to +150°C.
  6. What type of package does the 1N5821-T come in?
    The 1N5821-T comes in a DO-201AD axial package.
  7. What is the mounting type of the 1N5821-T?
    The mounting type is through-hole.
  8. What are some common applications of the 1N5821-T?
    Common applications include power supplies, DC-DC converters, switching power systems, automotive and industrial power systems, and general-purpose rectification.
  9. What is the reverse leakage current of the 1N5821-T at 30 V?
    The reverse leakage current (IR) at 30 V is 2 mA.
  10. Is the 1N5821-T RoHS compliant?
    Yes, the 1N5821-T is RoHS compliant.

Product Attributes

Diode Type:Schottky
Voltage - DC Reverse (Vr) (Max):30 V
Current - Average Rectified (Io):3A
Voltage - Forward (Vf) (Max) @ If:500 mV @ 3 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):- 
Current - Reverse Leakage @ Vr:2 mA @ 30 V
Capacitance @ Vr, F:- 
Mounting Type:Through Hole
Package / Case:DO-201AD, Axial
Supplier Device Package:DO-201AD
Operating Temperature - Junction:-65°C ~ 150°C
0 Remaining View Similar

In Stock

-
269

Please send RFQ , we will respond immediately.

Same Series
1N5822-T
1N5822-T
DIODE SCHOTTKY 40V 3A DO201AD
1N5821-T
1N5821-T
DIODE SCHOTTKY 30V 3A DO201AD
1N5820-T
1N5820-T
DIODE SCHOTTKY 20V 3A DO201AD
1N5820-B
1N5820-B
DIODE SCHOTTKY 20V 3A DO201AD
1N5822-B
1N5822-B
DIODE SCHOTTKY 40V 3A DO201AD

Similar Products

Part Number 1N5821-T 1N5821-TP 1N5822-T 1N5820-T 1N5821-B
Manufacturer Diodes Incorporated Micro Commercial Co Diodes Incorporated Diodes Incorporated Diodes Incorporated
Product Status Obsolete Active Obsolete Obsolete Obsolete
Diode Type Schottky Schottky Schottky Schottky Schottky
Voltage - DC Reverse (Vr) (Max) 30 V 30 V 40 V 20 V 30 V
Current - Average Rectified (Io) 3A 3A 3A 3A 3A
Voltage - Forward (Vf) (Max) @ If 500 mV @ 3 A 500 mV @ 3 A 525 mV @ 3 A 475 mV @ 3 A 500 mV @ 3 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) - - - - -
Current - Reverse Leakage @ Vr 2 mA @ 30 V 500 µA @ 30 V 2 mA @ 40 V 2 mA @ 20 V 2 mA @ 30 V
Capacitance @ Vr, F - 200pF @ 4V, 1MHz - - -
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole
Package / Case DO-201AD, Axial DO-201AD, Axial DO-201AD, Axial DO-201AD, Axial DO-201AD, Axial
Supplier Device Package DO-201AD DO-201AD DO-201AD DO-201AD DO-201AD
Operating Temperature - Junction -65°C ~ 150°C -55°C ~ 125°C -65°C ~ 150°C -65°C ~ 150°C -65°C ~ 150°C

Related Product By Categories

BAS20WTHE3-TP
BAS20WTHE3-TP
Micro Commercial Co
DIODE GEN PURP 150V 200MA SOT323
STTH30RQ06WL
STTH30RQ06WL
STMicroelectronics
600 V, 30 A SOFT ULTRAFAST RECOV
STPS2H100A
STPS2H100A
STMicroelectronics
DIODE SCHOTTKY 100V 2A SMA
BAT42W-E3-18
BAT42W-E3-18
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 30V 200MA SOD123
BAS516-TP
BAS516-TP
Micro Commercial Co
DIODE GEN PURP 100V 250MA SOD523
MBRS130
MBRS130
Fairchild Semiconductor
RECTIFIER, SCHOTTKY, 1A, 30V
BAS21E6433HTMA1
BAS21E6433HTMA1
Infineon Technologies
DIODE GEN PURP 200V 250MA SOT23
BAV21WS RRG
BAV21WS RRG
Taiwan Semiconductor Corporation
DIODE GEN PURP 250V 200MA SOD323
BAS40WQ-7-F
BAS40WQ-7-F
Diodes Incorporated
SCHOTTKY DIODE SOT323 T&R 3K
MBR0530T3
MBR0530T3
onsemi
DIODE SCHOTTKY 30V 500MA SOD123
BAS321-QX
BAS321-QX
Nexperia USA Inc.
TRANS PREBIAS NPN/PNP
MUR420S R6
MUR420S R6
Taiwan Semiconductor Corporation
DIODE GEN PURP 3A DO214AB

Related Product By Brand

SMBJ5.0CA-13-F
SMBJ5.0CA-13-F
Diodes Incorporated
TVS DIODE 5VWM 9.2VC SMB
BAS70-05T-7-F
BAS70-05T-7-F
Diodes Incorporated
DIODE ARRAY SCHOTTKY 70V SOT523
BAS40-04T-7-F-36
BAS40-04T-7-F-36
Diodes Incorporated
DIODE ARRAY SCHOTTKY 40V SOT523
BAT54W-7-F
BAT54W-7-F
Diodes Incorporated
DIODE SCHOTTKY 30V 200MA SOT323
1N4148WQ-13-F
1N4148WQ-13-F
Diodes Incorporated
SWITCHING DIODE SOD123 T&R 10K
BAS16WQ-7-F
BAS16WQ-7-F
Diodes Incorporated
SWITCHING DIODE SOT323 T&R 3K
BZX84C30-7-F-31
BZX84C30-7-F-31
Diodes Incorporated
DIODE ZENER 30V 300MW SOT23
BC807-40W-7
BC807-40W-7
Diodes Incorporated
TRANS PNP 45V 0.5A SOT323
BCX5210TA
BCX5210TA
Diodes Incorporated
TRANS PNP 60V 1A SOT89-3
2N7002TA
2N7002TA
Diodes Incorporated
MOSFET N-CH 60V 115MA SOT23-3
74LVC1G125QW5-7
74LVC1G125QW5-7
Diodes Incorporated
IC BUFFER NON-INVERT 5.5V SOT25
ULN2002AS16-13
ULN2002AS16-13
Diodes Incorporated
IC PWR RELAY 7NPN 1:1 16SO