Overview
The BC846BR TR PBFREE is a silicon NPN transistor manufactured by Central Semiconductor Corp. This transistor is part of the BC846 series, which includes the BC846, BC847, and BC848 models. These transistors are produced using the epitaxial planar process and are epoxy molded in a surface mount package, specifically the SOT-23 case. They are designed for general-purpose switching and amplifier applications.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Collector-Base Voltage (VCBO) | 80 | V |
| Collector-Emitter Voltage (VCEO) | 65 | V |
| Emitter-Base Voltage (VEBO) | 6.0 | V |
| Continuous Collector Current (IC) | 100 | mA |
| Peak Collector Current (ICM) | 200 | mA |
| Peak Base Current (IBM) | 200 | mA |
| Power Dissipation (PD) | 330 | mW |
| Operating and Storage Junction Temperature (TJ, Tstg) | -55 to +150 | °C |
| Thermal Resistance (ΘJA) | 375 | °C/W |
| Collector Cutoff Current (ICBO) at VCB = 30 V | 15 | nA |
| Collector Cutoff Current (ICBO) at VCB = 30 V, TA = 150°C | 5.0 | µA |
| DC Current Gain (hFE) at IC = 2.0 mA, VCE = 5.0 V | 110 - 220 | |
| Collector-Emitter Saturation Voltage (VCE(sat)) at IC = 10 mA, IB = 0.5 mA | 0.25 | V |
| Base-Emitter Saturation Voltage (VBE(sat)) at IC = 10 mA, IB = 0.5 mA | 0.70 | V |
| Output Capacitance (Cobo) at VCB = 10 V, f = 1.0 MHz | 4.5 | pF |
Key Features
- General Purpose Switching and Amplifier Applications: Suitable for a wide range of general-purpose switching and amplifier applications due to its robust specifications.
- Surface Mount Package: Epoxy molded in a SOT-23 surface mount package, making it convenient for modern PCB designs.
- High DC Current Gain: Offers a DC current gain (hFE) ranging from 110 to 220 at IC = 2.0 mA and VCE = 5.0 V, ensuring reliable amplification.
- Low Saturation Voltages: Features low collector-emitter and base-emitter saturation voltages, which are beneficial for reducing power consumption in switching applications.
- Wide Operating Temperature Range: Operates over a temperature range of -55°C to +150°C, making it suitable for various environmental conditions.
- Lead-Free Option: Available in a lead-free version, marked as PBFREE, which complies with environmental regulations.
Applications
- General Purpose Amplifiers: Used in various amplifier circuits where a reliable and stable gain is required.
- Switching Circuits: Suitable for switching applications due to its low saturation voltages and high current gain.
- Automotive Electronics: Can be used in automotive systems due to its wide operating temperature range.
- Consumer Electronics: Commonly used in consumer electronic devices such as audio equipment, power supplies, and other electronic gadgets.
- Industrial Control Systems: Used in industrial control systems for reliable switching and amplification functions.
Q & A
- What is the collector-emitter breakdown voltage of the BC846BR transistor?
The collector-emitter breakdown voltage (VCEO) of the BC846BR transistor is 65 V.
- What is the maximum continuous collector current for the BC846BR transistor?
The maximum continuous collector current (IC) for the BC846BR transistor is 100 mA.
- What is the typical DC current gain (hFE) of the BC846BR transistor?
The typical DC current gain (hFE) of the BC846BR transistor ranges from 110 to 220 at IC = 2.0 mA and VCE = 5.0 V.
- What is the operating temperature range of the BC846BR transistor?
The operating temperature range of the BC846BR transistor is -55°C to +150°C.
- Is the BC846BR transistor available in a lead-free version?
Yes, the BC846BR transistor is available in a lead-free version, marked as PBFREE.
- What is the power dissipation (PD) of the BC846BR transistor?
The power dissipation (PD) of the BC846BR transistor is 330 mW.
- What is the thermal resistance (ΘJA) of the BC846BR transistor?
The thermal resistance (ΘJA) of the BC846BR transistor is 375 °C/W.
- What is the collector-emitter saturation voltage (VCE(sat)) of the BC846BR transistor?
The collector-emitter saturation voltage (VCE(sat)) of the BC846BR transistor is 0.25 V at IC = 10 mA and IB = 0.5 mA.
- What is the base-emitter saturation voltage (VBE(sat)) of the BC846BR transistor?
The base-emitter saturation voltage (VBE(sat)) of the BC846BR transistor is 0.70 V at IC = 10 mA and IB = 0.5 mA.
- What is the output capacitance (Cobo) of the BC846BR transistor?
The output capacitance (Cobo) of the BC846BR transistor is 4.5 pF at VCB = 10 V and f = 1.0 MHz.
