Overview
The W29N01HVSINA is a 1Gb Single-Level Cell (SLC) NAND Flash memory chip manufactured by Winbond Electronics. This device is designed to provide high-performance storage solutions for embedded systems, offering ultra-fast code and data access, low power consumption, and compact packaging. It operates within a voltage range of 2.7V to 3.6V, making it suitable for a wide range of applications requiring reliable and efficient memory storage.
Key Specifications
| Attribute | Value |
|---|---|
| Density | 1 Gb |
| Voltage Range | 2.7V - 3.6V |
| Package Types | TSOP48, BGA48, BGA63 |
| Temperature Range | -40℃ ~ 85℃ / -40℃ ~ 105℃ / -40℃ ~ 115℃ |
| Bus Width | x8 |
| Random Read Time | 25 μs (typ.) |
| Page Program Time | 250 μs (typ.) |
| Block Erase Time | 2 ms (typ.) |
| Endurance | 100,000 Erase/Program Cycles |
| Data Retention | 10 years |
Key Features
- Ultra-fast code and data access with a random read time of 25 μs (typ.)
- Low power consumption: 25 mA (typ.) for read, program, and erase operations; 10 μA (typ.) for CMOS standby
- Compact and space-efficient packaging options including TSOP48, BGA48, and BGA63
- Standard NAND flash memory interface with multiplexed 8-bit bus for data, addresses, and command instructions
- Support for standard NAND command set and additional commands such as Copy Back
- High endurance with 100,000 erase/program cycles and 10-year data retention
Applications
The W29N01HVSINA is suitable for a variety of applications in embedded systems, including but not limited to:
- Industrial control systems
- Automotive systems
- Consumer electronics
- Medical devices
- Networking and communication devices
Q & A
- What is the density of the W29N01HVSINA NAND Flash memory?
The W29N01HVSINA has a density of 1 Gb. - What is the operating voltage range of the W29N01HVSINA?
The operating voltage range is 2.7V to 3.6V. - What are the available package types for the W29N01HVSINA?
The available package types are TSOP48, BGA48, and BGA63. - What is the random read time of the W29N01HVSINA?
The random read time is 25 μs (typ.). - How many erase/program cycles can the W29N01HVSINA endure?
The device can endure 100,000 erase/program cycles. - What is the data retention period of the W29N01HVSINA?
The data retention period is 10 years. - What are the power consumption characteristics of the W29N01HVSINA?
The device consumes 25 mA (typ.) for read, program, and erase operations, and 10 μA (typ.) for CMOS standby. - Does the W29N01HVSINA support any additional commands beyond the standard NAND command set?
Yes, it supports additional commands such as Copy Back. - What are the typical block erase and page program times for the W29N01HVSINA?
The typical block erase time is 2 ms, and the typical page program time is 250 μs. - What is the bus width of the W29N01HVSINA?
The bus width is x8.
