Overview
The SM6T6V8AHM3/I is a surface-mount transient voltage suppressor (TVS) diode from Vishay General Semiconductor - Diodes Division. This component is part of the SM6T series, designed to protect sensitive electronics against voltage transients and electrostatic discharges. The SM6T6V8AHM3/I is particularly suited for applications requiring high reliability and stability in various environments, including automotive, industrial, and consumer electronics.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Peak Pulse Power (10/1000 μs) | 600 | W |
| Stand-off Voltage (VWM) | 5.8 | V |
| Breakdown Voltage (VBR) | 6.45 - 7.14 | V |
| Maximum Junction Temperature (TJ) | 150 | °C |
| Leakage Current at 25 °C | 0.2 | μA |
| Leakage Current at 85 °C | 1 | μA |
| Package | SMB (DO-214AA) | |
| Lead Finishing | Matte tin plated | |
| Compliance | UL94 V-0, J-STD-020 MSL level 1, J-STD-002, JESD 22-B102, AEC-Q101 qualified |
Key Features
- Low profile package ideal for automated placement
- Glass passivated chip junction for high reliability
- Available in unidirectional and bidirectional configurations
- High power capability with 600 W peak pulse power (10/1000 μs) and 4 kW (8/20 μs)
- Excellent clamping capability and low inductance
- Meets MSL level 1, per J-STD-020, and has a maximum peak of 260 °C
- AEC-Q101 qualified for automotive applications
- Compliant with IEC 61000-4-2 and MIL STD 883 for electrostatic discharge protection
Applications
The SM6T6V8AHM3/I is used in various applications to protect sensitive electronics against voltage transients and electrostatic discharges. These include:
- Protection of ICs, MOSFETs, and signal lines in consumer electronics
- Industrial control systems and automation
- Automotive systems requiring AEC-Q101 qualification
- Telecommunication equipment
- High-end equipment and switch-mode power supplies (SMPS) where low leakage current and high junction temperature are critical
Q & A
- What is the peak pulse power of the SM6T6V8AHM3/I?
The peak pulse power is 600 W (10/1000 μs) and 4 kW (8/20 μs).
- What is the stand-off voltage (VWM) of this component?
The stand-off voltage (VWM) is 5.8 V.
- What are the breakdown voltage (VBR) ranges for this TVS diode?
The breakdown voltage (VBR) ranges from 6.45 V to 7.14 V.
- What is the maximum junction temperature (TJ) for this component?
The maximum junction temperature (TJ) is 150 °C.
- Is the SM6T6V8AHM3/I AEC-Q101 qualified?
- What is the package type of the SM6T6V8AHM3/I?
The package type is SMB (DO-214AA)).
- What are the compliance standards for this component?
- What are the typical applications of the SM6T6V8AHM3/I?
- Does the SM6T6V8AHM3/I protect against electrostatic discharges?
- What is the leakage current at 25 °C and 85 °C for this TVS diode?
