Overview
The SM6T12AHM3_A/I is a surface-mount transient voltage suppressor (TVS) from Vishay General Semiconductor - Diodes Division. This component is part of the SM6T series, designed to protect sensitive electronic equipment against voltage transients and electrostatic discharges. The SM6T12AHM3_A/I is particularly suited for applications requiring high reliability and stability in various environments, including automotive, industrial, and consumer electronics.
Key Specifications
Parameter | Symbol | Value | Unit |
---|---|---|---|
Peak Pulse Power Dissipation (10/1000 μs) | PPPM | 600 W | |
Stand-off Voltage (Typical) | VWM | 10.2 V | |
Breakdown Voltage (Minimum) | VBR | 11.4 V | |
Maximum Reverse Leakage Current at VWM | ID | 0.2 μA at 25 °C, 1 μA at 85 °C | |
Peak Pulse Current (10/1000 μs) | IPPM | See datasheet for specific values | |
Power Dissipation on Infinite Heatsink | PD | 5.0 W at TA = 50 °C | |
Operating Junction Temperature Range | TJ, TSTG | -65 to +150 °C | |
Package Type | SMB (DO-214AA) | ||
Lead Finishing | Matte tin plated leads |
Key Features
- Low profile package ideal for automated placement
- Glass passivated chip junction
- Available in unidirectional and bidirectional configurations
- 600 W peak pulse power capability with a 10/1000 μs waveform
- Excellent clamping capability and low inductance
- Meets MSL level 1, per J-STD-020, with a maximum peak of 260 °C
- AEC-Q101 qualified for automotive applications
- RoHS-compliant and halogen-free options available
- Complies with UL94 V-0 flammability rating
Applications
The SM6T12AHM3_A/I is used in various applications to protect sensitive electronics against voltage transients and electrostatic discharges. These include:
- Protection of ICs, MOSFETs, and signal lines in consumer electronics
- Industrial control systems and equipment
- Automotive systems requiring high reliability and AEC-Q101 qualification
- Telecommunication devices and networks
- Computer and computing systems
Q & A
- What is the peak pulse power dissipation of the SM6T12AHM3_A/I?
The peak pulse power dissipation is 600 W with a 10/1000 μs waveform.
- What is the stand-off voltage (VWM) of the SM6T12AHM3_A/I?
The stand-off voltage (VWM) is 10.2 V.
- What is the breakdown voltage (VBR) of the SM6T12AHM3_A/I?
The breakdown voltage (VBR) is a minimum of 11.4 V.
- What is the maximum reverse leakage current at VWM?
The maximum reverse leakage current at VWM is 0.2 μA at 25 °C and 1 μA at 85 °C).
- What is the operating junction temperature range of the SM6T12AHM3_A/I?
The operating junction temperature range is -65 to +150 °C).
- Is the SM6T12AHM3_A/I AEC-Q101 qualified?
Yes, the SM6T12AHM3_A/I is AEC-Q101 qualified for automotive applications).
- What is the package type of the SM6T12AHM3_A/I?
The package type is SMB (DO-214AA)).
- What are the typical applications of the SM6T12AHM3_A/I?
Typical applications include protection of ICs, MOSFETs, and signal lines in consumer electronics, industrial control systems, automotive systems, telecommunication devices, and computer systems).
- Does the SM6T12AHM3_A/I meet any specific standards?
Yes, it complies with UL94 V-0 flammability rating, J-STD-020 MSL level 1, and other relevant standards such as IEC 61000-4-2 and IEC 61000-4-4).
- What is the lead finishing of the SM6T12AHM3_A/I?
The leads are matte tin plated and solderable per J-STD-002 and JESD 22-B102).