Overview
The SM6T10AHM3_A/I is a transient voltage suppressor (TVS) diode produced by Vishay General Semiconductor - Diodes Division. This component is designed to protect sensitive electronics from voltage transients and spikes, making it an essential part of various electronic systems. The SM6T10AHM3_A/I is part of the SM6T series, known for its high reliability and performance in harsh environments.
Key Specifications
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Reverse Stand-Off Voltage | VWM | 10 V to 43 V (specifically 8.55 V for SM6T10AHM3_A/I) | V |
| Breakdown Voltage | VBR | 11.1 V to 52.8 V (specifically around 11.7 V for SM6T10AHM3_A/I) | V |
| Peak Pulse Power Dissipation (10/1000 μs waveform) | PPPM | 4600 W | W |
| Peak Pulse Power Dissipation (10/10,000 μs waveform) | PPPM | 3600 W | W |
| Power Dissipation on Infinite Heatsink at TA = 25 °C | PD | 6 W | W |
| Peak Forward Surge Current (8.3 ms single half sine-wave) | IFSM | 600 A | A |
| Maximum Junction Temperature | TJ max. | 175 °C | °C |
| Polarity | Unidirectional | ||
| Package | DO-218AC (compatible with DO-218) |
Key Features
- Junction passivation optimized design using passivated anisotropic rectifier technology.
- High junction temperature capability up to 175 °C.
- RoHS-compliant and AEC-Q101 qualified, ensuring high reliability in automotive and industrial applications.
- Matt tin plated leads, solderable per J-STD-002 and JESD 22-B102.
- Meets JESD 201 class 2 whisker test.
- Molding compound meets UL 94 V-0 flammability rating.
Applications
The SM6T10AHM3_A/I is particularly useful in protecting sensitive electronics against voltage transients induced by inductive load switching and lightning. It is especially suited for automotive load dump protection applications.
Q & A
- What is the primary function of the SM6T10AHM3_A/I diode?
The primary function is to protect sensitive electronics from voltage transients and spikes.
- What is the reverse stand-off voltage (VWM) for the SM6T10AHM3_A/I?
The reverse stand-off voltage (VWM) for the SM6T10AHM3_A/I is specifically around 8.55 V.
- What is the peak pulse power dissipation capability of the SM6T10AHM3_A/I?
The peak pulse power dissipation capability is 4600 W for a 10/1000 μs waveform and 3600 W for a 10/10,000 μs waveform.
- What is the maximum junction temperature for the SM6T10AHM3_A/I?
The maximum junction temperature is 175 °C.
- Is the SM6T10AHM3_A/I RoHS-compliant and AEC-Q101 qualified?
- What type of package does the SM6T10AHM3_A/I use?
The SM6T10AHM3_A/I uses a DO-218AC package, which is compatible with DO-218.
- What is the peak forward surge current rating for the SM6T10AHM3_A/I?
The peak forward surge current rating is 600 A for an 8.3 ms single half sine-wave.
- What are the typical applications for the SM6T10AHM3_A/I?
It is typically used for protecting against voltage transients in automotive load dump protection and other sensitive electronic systems.
- Does the SM6T10AHM3_A/I meet any specific industry standards?
- How is the thermal performance of the SM6T10AHM3_A/I?
The typical thermal resistance junction-to-ambient (RθJA) is 55 °C/W, and junction-to-mount (RθJM) is 0.45 °C/W.
