DF10S/27
  • Share:

Vishay General Semiconductor - Diodes Division DF10S/27

Manufacturer No:
DF10S/27
Manufacturer:
Vishay General Semiconductor - Diodes Division
Package:
Tape & Reel (TR)
Description:
BRIDGE RECT 1PHASE 1KV 1A DFS
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The DF10S/27 bridge rectifier, produced by Vishay General Semiconductor - Diodes Division, is a high-performance component designed to meet the demands of modern power supply systems. This rectifier is part of the DFxS family, known for its enhanced surge rating, improved efficiency, and reduced size. The DF10S/27 is particularly suited for applications requiring high reliability and efficiency in power conversion.

Key Specifications

Parameter Value Unit
VRRM (Maximum Repetitive Reverse Voltage) 1000 V
VRMS (Maximum RMS Bridge Input Voltage) 700 V
VDC (DC Reverse Voltage at Rated IR) 1000 V
IF(AV) (Average Rectified Forward Current at TA = 40°C) 1.5 A
IFSM (Non-Repetitive Peak Forward Surge Current) 50 A
TSTG (Storage Temperature Range) -55 to +150 °C
TJ (Operating Junction Temperature) -55 to +150 °C
VF (Forward Voltage, per Element at IF = 1.5 A, 25°C) 1.1 V
IR (Reverse Current, per Element at Rated VR, 25°C) 5.0 μA
I2t Rating for Fusing (t < 8.35 ms) 10 A²s

Key Features

  • High Surge Rating: The DF10S/27 has a non-repetitive peak forward surge current rating of 50 A, ensuring reliability under high inrush surge conditions.
  • Optimized Forward Voltage: With a typical forward voltage of 0.94 V at 1.5 A and 25°C, this rectifier supports cooler and more efficient operation.
  • Glass Passivated Junctions: Enhances the rectifier's reliability and performance.
  • Lead Free and Green Molding Compound: Compliant with EU RoHS 2002/95/EU directives and IEC61249 standards.
  • Qualified for IR Reflow and Wave Soldering: Ensures compatibility with various soldering processes.
  • UL Certified: Meets UL #E258596 standards for safety and reliability.
  • Compact SDIP Surface Mount Form Factor: Reduces board space and volumetric requirements.

Applications

The DF10S/27 bridge rectifier is suitable for a variety of applications, including:

  • Power Supplies: High-efficiency power supplies requiring reliable and efficient rectification.
  • Industrial Control Systems: Systems that need robust and reliable power conversion components.
  • Automotive Systems: Automotive applications demanding high surge ratings and efficiency.
  • Consumer Electronics: Devices requiring compact, efficient, and reliable power rectification.

Q & A

  1. What is the maximum repetitive reverse voltage (VRRM) of the DF10S/27?

    The maximum repetitive reverse voltage (VRRM) of the DF10S/27 is 1000 V.

  2. What is the average rectified forward current (IF(AV)) at 40°C for the DF10S/27?

    The average rectified forward current (IF(AV)) at 40°C for the DF10S/27 is 1.5 A.

  3. What is the non-repetitive peak forward surge current (IFSM) rating of the DF10S/27?

    The non-repetitive peak forward surge current (IFSM) rating of the DF10S/27 is 50 A.

  4. Is the DF10S/27 lead-free and RoHS compliant?

    Yes, the DF10S/27 is lead-free and compliant with EU RoHS 2002/95/EU directives.

  5. What is the typical forward voltage (VF) of the DF10S/27 at 1.5 A and 25°C?

    The typical forward voltage (VF) of the DF10S/27 at 1.5 A and 25°C is 0.94 V.

  6. Is the DF10S/27 UL certified?

    Yes, the DF10S/27 is UL certified with UL #E258596.

  7. What is the storage temperature range (TSTG) for the DF10S/27?

    The storage temperature range (TSTG) for the DF10S/27 is -55 to +150°C.

  8. What is the operating junction temperature (TJ) range for the DF10S/27?

    The operating junction temperature (TJ) range for the DF10S/27 is -55 to +150°C.

  9. What form factor does the DF10S/27 use?

    The DF10S/27 uses a compact SDIP surface mount form factor.

  10. Is the DF10S/27 qualified for IR reflow and wave soldering?

    Yes, the DF10S/27 is qualified for IR reflow and wave soldering.

Product Attributes

Diode Type:Single Phase
Technology:Standard
Voltage - Peak Reverse (Max):1 kV
Current - Average Rectified (Io):1 A
Voltage - Forward (Vf) (Max) @ If:1.1 V @ 1 A
Current - Reverse Leakage @ Vr:5 µA @ 1000 V
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:4-SMD, Gull Wing
Supplier Device Package:DFS
0 Remaining View Similar

In Stock

-
156

Please send RFQ , we will respond immediately.

Same Series
DF06S/77
DF06S/77
BRIDGE RECT 1PHASE 600V 1A DFS
DF08S/27
DF08S/27
BRIDGE RECT 1PHASE 800V 1A DFS

Related Product By Categories

BAS4002ARPPE6327HTSA1
BAS4002ARPPE6327HTSA1
Infineon Technologies
BRIDGE RECT 1P 40V 200MA SOT143
DF06S1
DF06S1
onsemi
BRIDGE RECT 1PHASE 600V 1A 4SDIP
NSR0320MW2T1H
NSR0320MW2T1H
onsemi
SMALL SIG SCHOTTKY SOD323
NSR1030QMUTWG
NSR1030QMUTWG
onsemi
BRIDGE RECT 1PHASE 30V 1A 4UDFN
DF10S2
DF10S2
onsemi
BRIDGE RECTIFIER DIODE, 1 PHASE,
DF10S/27
DF10S/27
Vishay General Semiconductor - Diodes Division
BRIDGE RECT 1PHASE 1KV 1A DFS
NMLU1210TWG
NMLU1210TWG
onsemi
BRIDGE RECT 1PH 20V 3.2A 8UDFN

Related Product By Brand

SM6T24CA-M3/5B
SM6T24CA-M3/5B
Vishay General Semiconductor - Diodes Division
TVS DIODE 20.5VWM 33.2VC DO214AA
SM6T68CA-M3/52
SM6T68CA-M3/52
Vishay General Semiconductor - Diodes Division
TVS DIODE 58.1VWM 92VC DO214AA
SM15T24AHE3_A/H
SM15T24AHE3_A/H
Vishay General Semiconductor - Diodes Division
TVS DIODE 20.5VWM 33.2VC DO214AB
SM15T18CAHM3/I
SM15T18CAHM3/I
Vishay General Semiconductor - Diodes Division
TVS DIODE 15.3VWM 25.2VC DO214AB
BYQ28E-200HE3/45
BYQ28E-200HE3/45
Vishay General Semiconductor - Diodes Division
DIODE ARRAY GP 200V 5A TO220AB
BAS16L-G3-08
BAS16L-G3-08
Vishay General Semiconductor - Diodes Division
SWITCHING DIODE GENPURP DFN1006-
BAV21W-HE3-08
BAV21W-HE3-08
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 200V 250MA SOD123
1N5406GP-E3/54
1N5406GP-E3/54
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 600V 3A DO201AD
1N4001GPEHE3/73
1N4001GPEHE3/73
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 50V 1A DO204AL
BZX84B10-G3-08
BZX84B10-G3-08
Vishay General Semiconductor - Diodes Division
DIODE ZENER 10V 300MW SOT23-3
BZX384C2V4-E3-08
BZX384C2V4-E3-08
Vishay General Semiconductor - Diodes Division
DIODE ZENER 2.4V 200MW SOD323
BZX84B22-G3-18
BZX84B22-G3-18
Vishay General Semiconductor - Diodes Division
DIODE ZENER 22V 300MW SOT23-3