Overview
The NMLU1210TWG is a full bridge rectifier module produced by onsemi, designed for high-efficiency power management in various applications. This device integrates dual 20 V N-channel MOSFETs with dual 3.2 A Schottky barrier diodes in a compact 4.0 x 4.0 x 0.5 mm UDFN package. It is optimized for low conduction losses and high reliability, making it suitable for portable electronic devices and other power management applications.
Key Specifications
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Input Voltage Between Two MOSFET Drains | VLL | 20 | V |
| Operating Junction and Storage Temperature | TJ, TSTG | -55 to 125 | °C |
| Continuous Drain Current (TA = 25°C) | IO | 2.2 | A |
| Continuous Drain Current (TA = 85°C) | IO | 1.16 | A |
| Power Dissipation (TA = 25°C) | PD | 1.2 | W |
| Power Dissipation (TA = 85°C) | PD | 0.47 | W |
| Gate Threshold Voltage | VGS(TH) | 1.2 to 2.2 | V |
| Drain-to-Source On Resistance (VGS = 10 V, ID = 3.2 A) | RDS(on) | 17 to 26 | mΩ |
| Maximum Instantaneous Forward Voltage of Schottky Diode (IF = 1.0 A) | VF | 0.36 | V |
| Maximum Instantaneous Reverse Current of Schottky Diode (VR = 20 V) | IR | 0.04 | mA |
| Package Type | 8-UDFN | ||
| Mounting Type | Surface Mount |
Key Features
- Full Bridge Rectifier Block with dual 20 V N-channel MOSFETs and dual 3.2 A Schottky barrier diodes.
- Low RDS(on) MOSFET to minimize conduction loss.
- Low gate charge MOSFET for efficient switching.
- Low VF Schottky diode for reduced power loss.
- Ultra Low Inductance Package for high-frequency applications.
- Halogen-Free Molding Compound and Pb-Free device.
Applications
- Wireless Charging.
- AC-DC Rectification.
- Power Management Applications for Portable Products such as cell phones, PMP, DSC, GPS, and others.
Q & A
- What is the NMLU1210TWG used for?
The NMLU1210TWG is used for high-efficiency power management in applications such as wireless charging, AC-DC rectification, and power management for portable electronic devices.
- What is the operating temperature range of the NMLU1210TWG?
The operating junction and storage temperature range is -55°C to 125°C.
- What is the maximum continuous drain current at 25°C and 85°C?
The maximum continuous drain current is 2.2 A at 25°C and 1.16 A at 85°C.
- What is the typical on-resistance of the MOSFET?
The typical on-resistance (RDS(on)) is 17 to 26 mΩ at VGS = 10 V and ID = 3.2 A.
- What is the maximum instantaneous forward voltage of the Schottky diode?
The maximum instantaneous forward voltage (VF) of the Schottky diode is 0.36 V at IF = 1.0 A.
- Is the NMLU1210TWG Pb-Free and halogen-free?
- What is the package type of the NMLU1210TWG?
The package type is 8-UDFN.
- What are the key features of the NMLU1210TWG?
The key features include low RDS(on) MOSFET, low gate charge MOSFET, low VF Schottky diode, and ultra low inductance package.
- Can the NMLU1210TWG be used in high-frequency applications?
- What are some typical applications of the NMLU1210TWG?
