BAW56-G3-08
  • Share:

Vishay General Semiconductor - Diodes Division BAW56-G3-08

Manufacturer No:
BAW56-G3-08
Manufacturer:
Vishay General Semiconductor - Diodes Division
Package:
Tape & Reel (TR)
Description:
DIODE ARRAY GP 70V 250MA SOT23
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BAW56-G3-08 is a small signal switching diode array produced by Vishay General Semiconductor - Diodes Division. This component is part of the BAW56 series, known for its fast switching capabilities and dual diode configuration. The BAW56-G3-08 is specifically designed with a common anode configuration, making it suitable for various applications requiring efficient and reliable signal switching.

Key Specifications

Parameter Value Unit
Diode Configuration 1 Pair Common Anode
Voltage - DC Reverse (Vr) (Max) 70 V
Current - Average Rectified (Io) (per Diode) 215 mA (DC)
Voltage - Forward (Vf) (Max) @ If 1.25 @ 150 mA V @ mA
Reverse Recovery Time (trr) 6 ns
Forward Continuous Current (IF) 350 mA
Non-Repetitive Peak Forward Current (IFSM) 2 A (tp = 1 μs), 1 A (tp = 1 ms), 0.5 A (tp = 1 s) A
Power Dissipation on FR-4 Board 270 mW mW
Junction Temperature (Tj) 150 °C
Storage Temperature Range (Tstg) -65 to +150 °C
Operating Temperature Range (Top) -55 to +150 °C

Key Features

  • Fast Switching Capability: The BAW56-G3-08 features fast recovery times, making it ideal for high-speed applications.
  • Dual Diode Configuration: This component is configured as a dual diode with a common anode, enhancing its versatility in circuit designs.
  • Low Forward Voltage: With a maximum forward voltage of 1.25 V at 150 mA, it minimizes power loss and heat generation.
  • High Reverse Voltage Rating: It can handle up to 70 V of reverse voltage, ensuring robust performance in various environments.
  • Compact SOT-23 Package: The component is packaged in a small SOT-23 footprint, making it suitable for space-constrained designs.
  • AEC-Q101 Qualified: This diode is qualified to the AEC-Q101 standard, ensuring reliability and performance in automotive and other demanding applications.

Applications

  • Automotive Systems: Suitable for use in automotive electronics due to its AEC-Q101 qualification and robust performance.
  • Industrial Control Systems: Used in industrial control circuits for signal switching and rectification.
  • Consumer Electronics: Ideal for use in consumer electronics such as power supplies, audio equipment, and other devices requiring fast switching diodes.
  • Computing and Networking: Applied in computing and networking equipment for polarity protection and signal switching.

Q & A

  1. What is the maximum reverse voltage rating of the BAW56-G3-08?

    The maximum reverse voltage rating is 70 V.

  2. What is the forward continuous current rating of the BAW56-G3-08?

    The forward continuous current rating is 350 mA.

  3. What is the reverse recovery time of the BAW56-G3-08?

    The reverse recovery time is 6 ns.

  4. What is the junction temperature range of the BAW56-G3-08?

    The junction temperature range is -55 to +150 °C.

  5. Is the BAW56-G3-08 AEC-Q101 qualified?
  6. What is the package type of the BAW56-G3-08?

    The package type is SOT-23.

  7. What are the typical applications of the BAW56-G3-08?

    Typical applications include automotive systems, industrial control systems, consumer electronics, and computing and networking equipment.

  8. What is the maximum forward voltage of the BAW56-G3-08 at 150 mA?

    The maximum forward voltage at 150 mA is 1.25 V.

  9. What is the storage temperature range of the BAW56-G3-08?

    The storage temperature range is -65 to +150 °C.

  10. What is the power dissipation on an FR-4 board for the BAW56-G3-08?

    The power dissipation on an FR-4 board is 270 mW.

Product Attributes

Diode Configuration:1 Pair Common Anode
Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):70 V
Current - Average Rectified (Io) (per Diode):250mA
Voltage - Forward (Vf) (Max) @ If:1.25 V @ 150 mA
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):6 ns
Current - Reverse Leakage @ Vr:2.5 mA @ 70 V
Operating Temperature - Junction:150°C (Max)
Mounting Type:Surface Mount
Package / Case:TO-236-3, SC-59, SOT-23-3
Supplier Device Package:SOT-23-3
0 Remaining View Similar

In Stock

$0.03
1,363

Please send RFQ , we will respond immediately.

Same Series
BAW56-G3-08
BAW56-G3-08
DIODE ARRAY GP 70V 250MA SOT23

Similar Products

Part Number BAW56-G3-08 BAW56-G3-18 BAW56-E3-08
Manufacturer Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division
Product Status Active Active Active
Diode Configuration 1 Pair Common Anode 1 Pair Common Anode 1 Pair Common Anode
Diode Type Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 70 V 70 V 70 V
Current - Average Rectified (Io) (per Diode) 250mA 250mA 250mA (DC)
Voltage - Forward (Vf) (Max) @ If 1.25 V @ 150 mA 1.25 V @ 150 mA 1.25 V @ 150 mA
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 6 ns 6 ns 6 ns
Current - Reverse Leakage @ Vr 2.5 mA @ 70 V 2.5 mA @ 70 V 2.5 µA @ 70 V
Operating Temperature - Junction 150°C (Max) 150°C (Max) 150°C (Max)
Mounting Type Surface Mount Surface Mount Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3
Supplier Device Package SOT-23-3 SOT-23-3 SOT-23-3

Related Product By Categories

BAV170-7-F
BAV170-7-F
Diodes Incorporated
DIODE ARRAY GP 85V 125MA SOT23-3
MBRB20200CT
MBRB20200CT
SMC Diode Solutions
DIODE ARRAY SCHOTTKY 200V D2PAK
STPS41L60CG-TR
STPS41L60CG-TR
STMicroelectronics
DIODE ARRAY SCHOTTKY 60V D2PAK
BAV199-AQ
BAV199-AQ
Diotec Semiconductor
DIODE SOT-23 85V 0.14A 3NS
BAW56W,115
BAW56W,115
Nexperia USA Inc.
DIODE ARRAY GP 90V 150MA SOT323
BAS21VD,165
BAS21VD,165
Nexperia USA Inc.
DIODE ARRAY GP 200V 200MA 6TSOP
BAW567DW-7-F
BAW567DW-7-F
Diodes Incorporated
DIODE ARRAY GP 75V 150MA SOT363
BYQ28EF-200-E3/45
BYQ28EF-200-E3/45
Vishay General Semiconductor - Diodes Division
DIODE ARRAY GP 200V 5A ITO220AB
BAS21SLT1
BAS21SLT1
onsemi
DIODE ARRAY GP 250V 225MA SOT23
BAW 56W H6327
BAW 56W H6327
Infineon Technologies
DIODE ARRAY GP 80V 200MA SOT323
BAV199HMT116
BAV199HMT116
Rohm Semiconductor
DIODE ARR GEN PUR 80V 215MA SSD3
BAS40-05HMFHT116
BAS40-05HMFHT116
Rohm Semiconductor
DIODE ARRAY SCHOT 40V 120MA SSD3

Related Product By Brand

SM15T39A-E3/57T
SM15T39A-E3/57T
Vishay General Semiconductor - Diodes Division
TVS DIODE 33.3VWM 53.9VC DO214AB
MBR1545CT/45
MBR1545CT/45
Vishay General Semiconductor - Diodes Division
DIODE ARRAY SCHOTTKY 45V TO220AB
1N4007GPHM3/54
1N4007GPHM3/54
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 1KV 1A DO204AL
BZX55C5V6-TAP
BZX55C5V6-TAP
Vishay General Semiconductor - Diodes Division
DIODE ZENER 5.6V 500MW DO35
BZX384B24-G3-18
BZX384B24-G3-18
Vishay General Semiconductor - Diodes Division
DIODE ZENER 24V 200MW SOD323
BZX84C3V9-HE3-18
BZX84C3V9-HE3-18
Vishay General Semiconductor - Diodes Division
DIODE ZENER 3.9V 300MW SOT23-3
BZX84B2V4-E3-18
BZX84B2V4-E3-18
Vishay General Semiconductor - Diodes Division
DIODE ZENER 2.4V 300MW SOT23-3
BZX84C3V6-G3-18
BZX84C3V6-G3-18
Vishay General Semiconductor - Diodes Division
DIODE ZENER 3.6V 300MW SOT23-3
BZX84C51-G3-08
BZX84C51-G3-08
Vishay General Semiconductor - Diodes Division
DIODE ZENER 51V 300MW SOT23-3
BZX84B24-G3-08
BZX84B24-G3-08
Vishay General Semiconductor - Diodes Division
DIODE ZENER 23.5V 300MW SOT23-3
BZX384B11-G3-18
BZX384B11-G3-18
Vishay General Semiconductor - Diodes Division
DIODE ZENER 11V 200MW SOD323
BZX384B36-G3-18
BZX384B36-G3-18
Vishay General Semiconductor - Diodes Division
DIODE ZENER 36V 200MW SOD323