BAV21-TAP
  • Share:

Vishay General Semiconductor - Diodes Division BAV21-TAP

Manufacturer No:
BAV21-TAP
Manufacturer:
Vishay General Semiconductor - Diodes Division
Package:
Cut Tape (CT)
Description:
DIODE GEN PURP 200V 250MA DO35
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BAV21-TAP, produced by Vishay General Semiconductor - Diodes Division, is a general-purpose silicon epitaxial planar diode. This component is part of the BAV series, which includes various voltage ratings to suit different application needs. The BAV21 specifically has a repetitive peak reverse voltage (VRRM) of 250 V, making it suitable for a wide range of electronic circuits that require reliable and efficient rectification or switching.

Key Specifications

Parameter Value Unit
Repetitive Peak Reverse Voltage (VRRM) 250 V
Reverse Voltage (VR) 200 V
Forward Continuous Current (IF) 250 mA
Peak Forward Surge Current (IFSM) 1 A
Power Dissipation (Ptot) 500 mW
Thermal Resistance Junction to Ambient Air (RthJA) 300 K/W
Junction Temperature (Tj) 175 °C
Storage Temperature Range (Tstg) -65 to +175 °C
Forward Voltage (VF) at IF = 100 mA 1 V
Reverse Current (IR) at VR = 200 V 100 nA
Reverse Recovery Time (trr) 50 ns

Key Features

  • Silicon epitaxial planar diode technology for high reliability and efficiency.
  • High repetitive peak reverse voltage (VRRM) of 250 V, suitable for various high-voltage applications.
  • Low forward voltage drop (VF) of 1 V at 100 mA, reducing power losses.
  • Low reverse current (IR) of 100 nA at 200 V, minimizing leakage current.
  • Fast reverse recovery time (trr) of 50 ns, ideal for high-frequency applications.
  • Compact package options such as DO-35 and SOD-123, suitable for space-constrained designs.

Applications

  • General-purpose rectification in power supplies and DC-DC converters.
  • Switching circuits in electronic devices requiring high reliability and low power loss.
  • Protection circuits against voltage spikes and overvoltage conditions.
  • AUDIO and video equipment where high signal integrity is required.
  • Automotive and industrial control systems needing robust and efficient diodes.

Q & A

  1. What is the repetitive peak reverse voltage (VRRM) of the BAV21-TAP diode?

    The VRRM of the BAV21-TAP diode is 250 V.

  2. What is the forward continuous current (IF) rating of the BAV21-TAP?

    The forward continuous current (IF) rating is 250 mA.

  3. What is the typical forward voltage drop (VF) at 100 mA for the BAV21-TAP?

    The typical forward voltage drop (VF) at 100 mA is 1 V.

  4. What is the reverse recovery time (trr) of the BAV21-TAP diode?

    The reverse recovery time (trr) is 50 ns.

  5. What are the common package types available for the BAV21-TAP?

    The BAV21-TAP is available in packages such as DO-35 and SOD-123.

  6. What is the storage temperature range for the BAV21-TAP diode?

    The storage temperature range is -65 to +175 °C.

  7. What is the thermal resistance junction to ambient air (RthJA) for the BAV21-TAP?

    The thermal resistance junction to ambient air (RthJA) is 300 K/W.

  8. Is the BAV21-TAP RoHS compliant?

    Yes, there are RoHS-compliant versions of the BAV21-TAP available.

  9. What are some typical applications of the BAV21-TAP diode?

    Typical applications include general-purpose rectification, switching circuits, protection circuits, and use in audio and video equipment.

  10. Where can I purchase the BAV21-TAP diode?

    The BAV21-TAP diode can be purchased from various distributors such as Digi-Key, Mouser, and other electronic component suppliers.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):200 V
Current - Average Rectified (Io):250mA (DC)
Voltage - Forward (Vf) (Max) @ If:1 V @ 100 mA
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):50 ns
Current - Reverse Leakage @ Vr:100 nA @ 150 V
Capacitance @ Vr, F:1.5pF @ 0V, 1MHz
Mounting Type:Through Hole
Package / Case:DO-204AH, DO-35, Axial
Supplier Device Package:DO-35 (DO-204AH)
Operating Temperature - Junction:175°C (Max)
0 Remaining View Similar

In Stock

$0.19
1,881

Please send RFQ , we will respond immediately.

Same Series
BAV21-TAP
BAV21-TAP
DIODE GEN PURP 200V 250MA DO35
BAV20-TR
BAV20-TR
DIODE GEN PURP 150V 250MA DO35
BAV20-TAP
BAV20-TAP
DIODE GEN PURP 150V 250MA DO35
BAV17-TAP
BAV17-TAP
DIODE GEN PURP 20V 250MA DO35
BAV18-TAP
BAV18-TAP
DIODE GEN PURP 50V 250MA DO35
BAV19-TAP
BAV19-TAP
DIODE GEN PURP 100V 250MA DO35
BAV17-TR
BAV17-TR
DIODE GEN PURP 20V 250MA DO35
BAV18-TR
BAV18-TR
DIODE GEN PURP 50V 250MA DO35

Similar Products

Part Number BAV21-TAP BAV20-TAP
Manufacturer Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division
Product Status Active Active
Diode Type Standard Standard
Voltage - DC Reverse (Vr) (Max) 200 V 150 V
Current - Average Rectified (Io) 250mA (DC) 250mA (DC)
Voltage - Forward (Vf) (Max) @ If 1 V @ 100 mA 1 V @ 100 mA
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 50 ns 50 ns
Current - Reverse Leakage @ Vr 100 nA @ 150 V 100 nA @ 150 V
Capacitance @ Vr, F 1.5pF @ 0V, 1MHz 1.5pF @ 0V, 1MHz
Mounting Type Through Hole Through Hole
Package / Case DO-204AH, DO-35, Axial DO-204AH, DO-35, Axial
Supplier Device Package DO-35 (DO-204AH) DO-35 (DO-204AH)
Operating Temperature - Junction 175°C (Max) 175°C (Max)

Related Product By Categories

NSR02F30NXT5G
NSR02F30NXT5G
onsemi
DIODE SCHOTTKY 30V 200MA 2DSN
BAS40WS_R1_00001
BAS40WS_R1_00001
Panjit International Inc.
SOD-323, SKY
PMEG3015EH,115
PMEG3015EH,115
Nexperia USA Inc.
DIODE SCHOTTKY 30V 1.5A SOD123F
BAV21WS-AQ
BAV21WS-AQ
Diotec Semiconductor
DIODE SOD-323 250V 0.2A 50NS
PMEG4005EJ,115
PMEG4005EJ,115
Nexperia USA Inc.
DIODE SCHOTTKY 40V 500MA SOD323F
STTH512D
STTH512D
STMicroelectronics
DIODE GEN PURP 1.2KV 5A TO220AC
STPSC8H065DI
STPSC8H065DI
STMicroelectronics
DIODE SCHOTTKY 650V 8A TO220AC
SBAS20HT1G
SBAS20HT1G
onsemi
DIODE GEN PURP 200V 200MA SOD323
NRVBA210LNT3G
NRVBA210LNT3G
onsemi
DIODE SCHOTTKY 2A 10V SMA2
BAS21_D87Z
BAS21_D87Z
onsemi
DIODE GEN PURP 250V 200MA SOT23
MURD330T4G
MURD330T4G
onsemi
DIODE GEN PURP 300V 3A DPAK
BAS321-QX
BAS321-QX
Nexperia USA Inc.
TRANS PREBIAS NPN/PNP

Related Product By Brand

SM6T39A-E3/52
SM6T39A-E3/52
Vishay General Semiconductor - Diodes Division
TVS DIODE 33.3VWM 53.9VC DO214AA
SM6T27AHM3_A/I
SM6T27AHM3_A/I
Vishay General Semiconductor - Diodes Division
TVS DIODE 23.1VWM 37.5VC DO214AA
SM15T12AHM3_A/H
SM15T12AHM3_A/H
Vishay General Semiconductor - Diodes Division
TVS DIODE 10.2VWM 16.7VC DO214AB
SM15T68AHM3/H
SM15T68AHM3/H
Vishay General Semiconductor - Diodes Division
TVS DIODE 58.1VWM 92VC DO214AB
SM6T22CAHM3/I
SM6T22CAHM3/I
Vishay General Semiconductor - Diodes Division
TVS DIODE 18.8VWM 30.6VC DO214AA
SM6T30CAHM3/I
SM6T30CAHM3/I
Vishay General Semiconductor - Diodes Division
TVS DIODE 25.6VWM 41.5VC DO214AA
BAV99-HE3-08
BAV99-HE3-08
Vishay General Semiconductor - Diodes Division
DIODE ARRAY GP 70V 150MA SOT23
MURS260HE3/52T
MURS260HE3/52T
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 600V 2A DO214AA
ZM4742A-GS18
ZM4742A-GS18
Vishay General Semiconductor - Diodes Division
DIODE ZENER 12V 1W DO213AB
BZX384C3V3-G3-18
BZX384C3V3-G3-18
Vishay General Semiconductor - Diodes Division
DIODE ZENER 3.3V 200MW SOD323
BZX84C22-G3-18
BZX84C22-G3-18
Vishay General Semiconductor - Diodes Division
DIODE ZENER 22V 300MW SOT23-3
BZX84C13-G3-08
BZX84C13-G3-08
Vishay General Semiconductor - Diodes Division
DIODE ZENER 13V 300MW SOT23-3