BAT54WS-E3-18
  • Share:

Vishay General Semiconductor - Diodes Division BAT54WS-E3-18

Manufacturer No:
BAT54WS-E3-18
Manufacturer:
Vishay General Semiconductor - Diodes Division
Package:
Tape & Reel (TR)
Description:
DIODE SCHOTTKY 30V 200MA SOD323
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BAT54WS-E3-18 is a small signal Schottky diode produced by Vishay General Semiconductor - Diodes Division. This diode is designed for various applications requiring efficient rectification, switching, and amplification. It features a compact SOD-323 package, making it ideal for modern electronic devices that demand space-constrained designs. The BAT54WS-E3-18 is known for its high forward current handling capability, low reverse leakage current, and fast switching times, making it a reliable choice for minimizing power losses and reducing system complexity.

Key Specifications

Parameter Test Condition Symbol Value Unit
Repetitive Peak Reverse Voltage - VRRM 30 V
Forward Continuous Current - IF 200 mA
Repetitive Peak Forward Current - IFRM 300 mA
Surge Forward Current (tp < 1 s) - IFSM 600 mA
Power Dissipation - Ptot 150 mW
Thermal Resistance Junction to Ambient Air - RthJA 650 K/W
Maximum Junction Temperature - Tj 125 °C
Storage Temperature Range - Tstg -65 to +150 °C
Operating Temperature Range - Top -55 to +125 °C
Reverse Breakdown Voltage Tested with 100 μA pulses V(BR) 30 V
Leakage Current VR = 25 V IR 2 μA
Forward Voltage IF = 100 mA VF 800 mV
Diode Capacitance VR = 1 V, f = 1 MHz CD 10 pF
Reverse Recovery Time IF = 10 mA, IR = 10 mA, iR = 1 mA, RL = 100 Ω trr 5 ns

Key Features

  • High Forward Current Handling: The BAT54WS-E3-18 can handle a forward continuous current of 200 mA and a repetitive peak forward current of 300 mA, making it suitable for applications requiring high current rectification.
  • Low Reverse Leakage Current: With a leakage current of only 2 μA at 25 V, this diode minimizes power losses and enhances system efficiency.
  • Fast Switching Times: The diode features a low reverse recovery time of 5 ns, which is crucial for high-speed switching applications.
  • Compact Package: The SOD-323 package is ideal for space-constrained designs, making it a preferred choice for modern electronic devices.
  • Wide Operating Temperature Range: The diode operates within a temperature range of -55°C to +125°C, ensuring reliability in various environmental conditions.

Applications

  • Power Supply Circuits: The BAT54WS-E3-18 is used in power supply circuits for efficient rectification and voltage regulation.
  • Motor Control Systems: It is employed in motor control systems to manage high current flows and ensure reliable operation.
  • Audio Amplifier Circuits: The diode is used in audio amplifier circuits to enhance signal quality and reduce noise.
  • Telecommunications Equipment: It is utilized in telecommunications equipment for signal switching and rectification.
  • Consumer Electronics Devices: The BAT54WS-E3-18 is found in various consumer electronics devices where compact, efficient, and reliable diode performance is required.

Q & A

  1. What is the repetitive peak reverse voltage of the BAT54WS-E3-18?

    The repetitive peak reverse voltage (VRRM) is 30 V.

  2. What is the forward continuous current rating of the BAT54WS-E3-18?

    The forward continuous current (IF) is 200 mA.

  3. What is the surge forward current rating of the BAT54WS-E3-18?

    The surge forward current (IFSM) is 600 mA for a pulse duration less than 1 second.

  4. What is the thermal resistance junction to ambient air for the BAT54WS-E3-18?

    The thermal resistance junction to ambient air (RthJA) is 650 K/W.

  5. What is the maximum junction temperature of the BAT54WS-E3-18?

    The maximum junction temperature (Tj) is 125°C.

  6. What is the storage temperature range for the BAT54WS-E3-18?

    The storage temperature range (Tstg) is -65°C to +150°C.

  7. What is the operating temperature range for the BAT54WS-E3-18?

    The operating temperature range (Top) is -55°C to +125°C.

  8. What is the forward voltage drop at 100 mA for the BAT54WS-E3-18?

    The forward voltage drop (VF) at 100 mA is 800 mV.

  9. What is the reverse recovery time of the BAT54WS-E3-18?

    The reverse recovery time (trr) is 5 ns.

  10. In what package is the BAT54WS-E3-18 available?

    The BAT54WS-E3-18 is available in the SOD-323 package.

Product Attributes

Diode Type:Schottky
Voltage - DC Reverse (Vr) (Max):30 V
Current - Average Rectified (Io):200mA (DC)
Voltage - Forward (Vf) (Max) @ If:800 mV @ 100 mA
Speed:Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr):5 ns
Current - Reverse Leakage @ Vr:2 µA @ 25 V
Capacitance @ Vr, F:10pF @ 1V, 1MHz
Mounting Type:Surface Mount
Package / Case:SC-76, SOD-323
Supplier Device Package:SOD-323
Operating Temperature - Junction:-55°C ~ 125°C
0 Remaining View Similar

In Stock

$0.40
1,529

Please send RFQ , we will respond immediately.

Same Series
BAT54WS-HE3-18
BAT54WS-HE3-18
DIODE SCHOTTKY 30V 200MA SOD323
BAT54WS-E3-18
BAT54WS-E3-18
DIODE SCHOTTKY 30V 200MA SOD323
BAT54WS-E3-08
BAT54WS-E3-08
DIODE SCHOTTKY 30V 200MA SOD323

Similar Products

Part Number BAT54WS-E3-18 BAT54WS-HE3-18 BAT54WS-G3-18 BAT54W-E3-18 BAT54WS-E3-08
Manufacturer Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division
Product Status Active Active Active Active Active
Diode Type Schottky Schottky Schottky Schottky Schottky
Voltage - DC Reverse (Vr) (Max) 30 V 30 V 30 V 30 V 30 V
Current - Average Rectified (Io) 200mA (DC) 200mA (DC) 200mA (DC) 200mA (DC) 200mA (DC)
Voltage - Forward (Vf) (Max) @ If 800 mV @ 100 mA 800 mV @ 100 mA 800 mV @ 100 mA 800 mV @ 100 mA 800 mV @ 100 mA
Speed Small Signal =< 200mA (Io), Any Speed Small Signal =< 200mA (Io), Any Speed Small Signal =< 200mA (Io), Any Speed Small Signal =< 200mA (Io), Any Speed Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr) 5 ns 5 ns 5 ns 5 ns 5 ns
Current - Reverse Leakage @ Vr 2 µA @ 25 V 2 µA @ 25 V 2 µA @ 25 V 2 µA @ 25 V 2 µA @ 25 V
Capacitance @ Vr, F 10pF @ 1V, 1MHz 10pF @ 1V, 1MHz 10pF @ 1V, 1MHz 10pF @ 1V, 1MHz 10pF @ 1V, 1MHz
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case SC-76, SOD-323 SC-76, SOD-323 SC-76, SOD-323 SOD-123 SC-76, SOD-323
Supplier Device Package SOD-323 SOD-323 SOD-323 SOD-123 SOD-323
Operating Temperature - Junction -55°C ~ 125°C 125°C (Max) 125°C (Max) 125°C (Max) 125°C (Max)

Related Product By Categories

1N4007-E3/53
1N4007-E3/53
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 1KV 1A DO204AL
PMEG1020EH,115
PMEG1020EH,115
Nexperia USA Inc.
DIODE SCHOTTKY 10V 2A SOD123F
BAS21Q-13-F
BAS21Q-13-F
Diodes Incorporated
HIVOLT SWITCHING DIODE BVR > 100
BAS321JX
BAS321JX
Nexperia USA Inc.
BAS321J/SOD323/SOD2
MURA160T3G
MURA160T3G
onsemi
DIODE GEN PURP 600V 1A SMA
1N4007 BK
1N4007 BK
Central Semiconductor Corp
DIODE GPP 1A 1000V DO41 AXIAL
BAS16T-TP
BAS16T-TP
Micro Commercial Co
DIODE GEN PURP 85V 75MA SOT523
NRVBA210LNT3G
NRVBA210LNT3G
onsemi
DIODE SCHOTTKY 2A 10V SMA2
MURS140-13
MURS140-13
Diodes Incorporated
DIODE GEN PURP 400V 1A SMB
BAS21_D87Z
BAS21_D87Z
onsemi
DIODE GEN PURP 250V 200MA SOT23
MUR260RL
MUR260RL
onsemi
DIODE GEN PURP 600V 2A AXIAL
MURS120HE3/52T
MURS120HE3/52T
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 200V 2A DO214AA

Related Product By Brand

SM6T33CAHM3_A/I
SM6T33CAHM3_A/I
Vishay General Semiconductor - Diodes Division
TVS DIODE 28.2VWM 45.7VC DO214AA
SM6T18AHE3/52
SM6T18AHE3/52
Vishay General Semiconductor - Diodes Division
TVS DIODE 15.3VWM 25.2VC DO214AA
SM15T12AHM3_A/I
SM15T12AHM3_A/I
Vishay General Semiconductor - Diodes Division
TVS DIODE 10.2VWM 16.7VC DO214AB
SM15T22CAHE3_A/I
SM15T22CAHE3_A/I
Vishay General Semiconductor - Diodes Division
TVS DIODE 18.8VWM 30.6VC DO214AB
SM15T24AHE3_A/H
SM15T24AHE3_A/H
Vishay General Semiconductor - Diodes Division
TVS DIODE 20.5VWM 33.2VC DO214AB
SM6T36CAHM3/I
SM6T36CAHM3/I
Vishay General Semiconductor - Diodes Division
TVS DIODE 30.8VWM 49.9VC DO214AA
BYQ28EB-200HE3_A/P
BYQ28EB-200HE3_A/P
Vishay General Semiconductor - Diodes Division
DIODE ARRAY GP 200V 5A TO263AB
BYW29-200-E3/45
BYW29-200-E3/45
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 200V 8A TO220AC
STPS1045BTRL
STPS1045BTRL
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 45V 10A DPAK
BZX84C62-HE3-08
BZX84C62-HE3-08
Vishay General Semiconductor - Diodes Division
DIODE ZENER 62V 300MW SOT23-3
BZX384B12-E3-18
BZX384B12-E3-18
Vishay General Semiconductor - Diodes Division
DIODE ZENER 12V 200MW SOD323
BZX84B3V0-G3-18
BZX84B3V0-G3-18
Vishay General Semiconductor - Diodes Division
DIODE ZENER 3V 300MW SOT23-3