BAS40-00-G3-18
  • Share:

Vishay General Semiconductor - Diodes Division BAS40-00-G3-18

Manufacturer No:
BAS40-00-G3-18
Manufacturer:
Vishay General Semiconductor - Diodes Division
Package:
Tape & Reel (TR)
Description:
DIODE SCHOTTKY 40V 200MA SOT23
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BAS40-00-G3-18 is a small signal Schottky diode produced by Vishay General Semiconductor - Diodes Division. This component is part of the BAS40 series and is known for its high performance and reliability in various electronic applications. The diode is packaged in a SOT-23-3 case, making it suitable for surface mount technology (SMT) and offering a compact solution for space-constrained designs.

Key Specifications

Parameter Value Unit
Technology Silicon (Si)
Package / Case SOT-23-3
Configuration Single
Vrrm - Repetitive Reverse Voltage 40 V
If - Forward Current 200 mA
Vf - Forward Voltage 1 V
Ifsm - Forward Surge Current 600 mA
Ir - Reverse Current 100 nA
Minimum Operating Temperature -55 °C
Maximum Operating Temperature +125 °C
Power Dissipation (Ptot) 200 mW
Thermal Resistance Junction to Ambient Air (RthJA) 500 K/W

Key Features

  • High Performance Schottky Diode: The BAS40-00-G3-18 offers low forward voltage drop and high switching speed, making it ideal for high-frequency applications.
  • Compact SOT-23-3 Package: Suitable for surface mount technology, this package is designed for space-constrained designs and offers ease of integration.
  • Reliable Operation: The diode operates reliably over a wide temperature range from -55°C to +125°C, ensuring stability in various environmental conditions.
  • Low Reverse Current: With a reverse current of 100 nA, this diode minimizes leakage current, which is crucial for power-efficient designs.
  • High Forward Surge Current Capability: The diode can handle surge currents up to 600 mA, providing protection against transient conditions.

Applications

  • Switching Power Supplies: The low forward voltage drop and high switching speed make this diode suitable for use in switching power supplies and DC-DC converters.
  • High-Frequency Circuits: Its high performance and low capacitance make it ideal for high-frequency applications such as RF circuits and microwave devices.
  • Automotive Electronics: The diode's ability to operate over a wide temperature range and its reliability make it a good choice for automotive electronic systems.
  • Consumer Electronics: It is used in various consumer electronic devices where high efficiency and compact design are required.

Q & A

  1. What is the repetitive reverse voltage (Vrrm) of the BAS40-00-G3-18?

    The repetitive reverse voltage (Vrrm) of the BAS40-00-G3-18 is 40 V.

  2. What is the forward current (If) rating of the BAS40-00-G3-18?

    The forward current (If) rating of the BAS40-00-G3-18 is 200 mA.

  3. What is the forward voltage (Vf) of the BAS40-00-G3-18?

    The forward voltage (Vf) of the BAS40-00-G3-18 is 1 V.

  4. What is the package type of the BAS40-00-G3-18?

    The package type of the BAS40-00-G3-18 is SOT-23-3.

  5. What is the operating temperature range of the BAS40-00-G3-18?

    The operating temperature range of the BAS40-00-G3-18 is from -55°C to +125°C.

  6. What is the power dissipation (Ptot) of the BAS40-00-G3-18?

    The power dissipation (Ptot) of the BAS40-00-G3-18 is 200 mW.

  7. What is the thermal resistance junction to ambient air (RthJA) of the BAS40-00-G3-18?

    The thermal resistance junction to ambient air (RthJA) of the BAS40-00-G3-18 is 500 K/W.

  8. What are some common applications of the BAS40-00-G3-18?

    The BAS40-00-G3-18 is commonly used in switching power supplies, high-frequency circuits, automotive electronics, and consumer electronics.

  9. Is the BAS40-00-G3-18 suitable for high-frequency applications?

    Yes, the BAS40-00-G3-18 is suitable for high-frequency applications due to its low forward voltage drop and high switching speed.

  10. What is the forward surge current capability of the BAS40-00-G3-18?

    The forward surge current capability of the BAS40-00-G3-18 is up to 600 mA.

Product Attributes

Diode Type:Schottky
Voltage - DC Reverse (Vr) (Max):40 V
Current - Average Rectified (Io):200mA
Voltage - Forward (Vf) (Max) @ If:1 V @ 40 mA
Speed:Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr):5 ns
Current - Reverse Leakage @ Vr:100 nA @ 30 V
Capacitance @ Vr, F:5pF @ 0V, 1MHz
Mounting Type:Surface Mount
Package / Case:TO-236-3, SC-59, SOT-23-3
Supplier Device Package:SOT-23-3
Operating Temperature - Junction:125°C (Max)
0 Remaining View Similar

In Stock

$0.05
9,920

Please send RFQ , we will respond immediately.

Same Series
BAS40-04-G3-08
BAS40-04-G3-08
DIODE ARRAY SCHOTTKY 40V SOT23
BAS40-04-G3-18
BAS40-04-G3-18
DIODE ARRAY SCHOTTKY 40V SOT23
BAS40-05-G3-18
BAS40-05-G3-18
DIODE ARRAY SCHOTTKY 40V SOT23
BAS40-06-G3-18
BAS40-06-G3-18
DIODE ARRAY SCHOTTKY 40V SOT23
BAS40-05-G3-08
BAS40-05-G3-08
DIODE ARRAY SCHOTTKY 40V SOT23
BAS40-06-G3-08
BAS40-06-G3-08
DIODE ARRAY SCHOTTKY 40V SOT23
BAS40-00-G3-18
BAS40-00-G3-18
DIODE SCHOTTKY 40V 200MA SOT23

Similar Products

Part Number BAS40-00-G3-18 BAS40-00-E3-18 BAS40-00-G3-08
Manufacturer Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division
Product Status Active Active Active
Diode Type Schottky Schottky Schottky
Voltage - DC Reverse (Vr) (Max) 40 V 40 V 40 V
Current - Average Rectified (Io) 200mA 200mA 200mA
Voltage - Forward (Vf) (Max) @ If 1 V @ 40 mA 1 V @ 40 mA 1 V @ 40 mA
Speed Small Signal =< 200mA (Io), Any Speed Small Signal =< 200mA (Io), Any Speed Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr) 5 ns 5 ns 5 ns
Current - Reverse Leakage @ Vr 100 nA @ 30 V 100 nA @ 30 V 100 nA @ 30 V
Capacitance @ Vr, F 5pF @ 0V, 1MHz 5pF @ 0V, 1MHz 5pF @ 0V, 1MHz
Mounting Type Surface Mount Surface Mount Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3
Supplier Device Package SOT-23-3 SOT-23-3 SOT-23-3
Operating Temperature - Junction 125°C (Max) 125°C (Max) 125°C (Max)

Related Product By Categories

BAT46WH,115
BAT46WH,115
Nexperia USA Inc.
DIODE SCHOT 100V 250MA SOD123F
BAS20-7-F
BAS20-7-F
Diodes Incorporated
DIODE GP 150V 200MA SOT23-3
STTH30RQ06WL
STTH30RQ06WL
STMicroelectronics
600 V, 30 A SOFT ULTRAFAST RECOV
MBRF40250TG
MBRF40250TG
onsemi
DIODE SCHOTTKY 250V 40A TO220FP
BAT54WSQ-7-F
BAT54WSQ-7-F
Diodes Incorporated
DIODE SCHOTTKY 30V 100MA SOD323
NRVUS1MFA
NRVUS1MFA
onsemi
DIODE GEN PURP 1A1000V SOD123-2
STPS2H100AFN
STPS2H100AFN
STMicroelectronics
100 V, 2 A POWER SCHOTTKY RECTIF
PMEG6020ELR-QX
PMEG6020ELR-QX
Nexperia USA Inc.
SCHOTTKYS IN CFP PACKAGES
1N4148TR_S00Z
1N4148TR_S00Z
onsemi
DIODE GEN PURP 100V 200MA DO35
1N4004GP-M3/54
1N4004GP-M3/54
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 400V 1A DO204AL
BAS316-QF
BAS316-QF
Nexperia USA Inc.
TRANS PREBIAS NPN/PNP
BAS316/ZLF
BAS316/ZLF
NXP USA Inc.
DIODE GEN PURP 100V 215MA SOD323

Related Product By Brand

SM15T39A-E3/9AT
SM15T39A-E3/9AT
Vishay General Semiconductor - Diodes Division
TVS DIODE 33.3VWM 53.9VC DO214AB
SM15T15A-E3/57T
SM15T15A-E3/57T
Vishay General Semiconductor - Diodes Division
TVS DIODE 12.8VWM 21.2VC DO214AB
SM6T68A-E3/5B
SM6T68A-E3/5B
Vishay General Semiconductor - Diodes Division
TVS DIODE 58.1VWM 92VC DO214AA
SM15T6V8CA-E3/57T
SM15T6V8CA-E3/57T
Vishay General Semiconductor - Diodes Division
TVS DIODE 5.8VWM 10.5VC DO214AB
1.5KE6.8A-E3/51
1.5KE6.8A-E3/51
Vishay General Semiconductor - Diodes Division
TVS DIODE 5.8VWM 10.5VC 1.5KE
SM6T18AHM3/I
SM6T18AHM3/I
Vishay General Semiconductor - Diodes Division
TVS DIODE 15.3VWM 25.2VC DO214AA
MBR10100-E3/4W
MBR10100-E3/4W
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 100V 10A TO220AC
MURS260HE3_A/I
MURS260HE3_A/I
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 600V 2A DO214AA
BZX84C75-E3-18
BZX84C75-E3-18
Vishay General Semiconductor - Diodes Division
DIODE ZENER 75V 300MW SOT23-3
BZX84C3V3-HE3-18
BZX84C3V3-HE3-18
Vishay General Semiconductor - Diodes Division
DIODE ZENER 3.3V 300MW SOT23-3
BZX84B10-E3-18
BZX84B10-E3-18
Vishay General Semiconductor - Diodes Division
DIODE ZENER 10V 300MW SOT23-3
BZX84C22-G3-18
BZX84C22-G3-18
Vishay General Semiconductor - Diodes Division
DIODE ZENER 22V 300MW SOT23-3