1N4007/54
  • Share:

Vishay General Semiconductor - Diodes Division 1N4007/54

Manufacturer No:
1N4007/54
Manufacturer:
Vishay General Semiconductor - Diodes Division
Package:
Tape & Reel (TR)
Description:
DIODE GEN PURP 1KV 1A DO204AL
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The 1N4007 is a general-purpose rectifier diode produced by Vishay General Semiconductor - Diodes Division. It is part of the 1N4001-1N4007 series, known for its high current capability and low-forward voltage drop. This diode is widely used in various applications requiring rectification, such as power supplies, inverters, converters, and freewheeling diodes. The 1N4007 is packaged in a DO-41 (DO-204AL) case, making it suitable for a range of industrial and consumer electronics needs.

Key Specifications

ParameterValueUnit
Repetitive Reverse Voltage (VRRM)1000V
Maximum RMS Voltage (VRMS)700V
Maximum DC Blocking Voltage (VDC)1000V
Average Forward Rectified Current (IF(AV))1.0A
Peak Forward Surge Current (IFSM)30A
Forward Voltage (VF)1.1V
Reverse Recovery Time (trr)--
Operating Temperature Range-65°C to +150°C°C
Junction Temperature (TJ max)150°C°C
Diode Case StyleDO-41 (DO-204AL)-
No. of Pins2-
Termination TypeAxial Leaded-

Key Features

  • High current capability with a maximum average forward rectified current of 1.0 A.
  • Low-forward voltage drop of 1.1 V.
  • Surge overload rating to 30 A peak.
  • Low reverse leakage current.
  • Operating temperature range from -65°C to +150°C.
  • DO-41 (DO-204AL) package for ease of use in various applications.

Applications

The 1N4007 diode is suitable for a variety of applications, including:

  • General purpose rectification in power supplies.
  • Inverters and converters.
  • Freewheeling diodes.
  • Automotive systems, such as power conversion for LED headlights and electronic control units (ECUs).
  • Consumer electronics, lighting, and telecommunications equipment.

Q & A

  1. What is the maximum repetitive reverse voltage of the 1N4007 diode?
    The maximum repetitive reverse voltage (VRRM) of the 1N4007 diode is 1000 V.
  2. What is the maximum average forward rectified current of the 1N4007 diode?
    The maximum average forward rectified current (IF(AV)) of the 1N4007 diode is 1.0 A.
  3. What is the forward voltage drop of the 1N4007 diode?
    The forward voltage drop (VF) of the 1N4007 diode is 1.1 V.
  4. What is the peak forward surge current rating of the 1N4007 diode?
    The peak forward surge current (IFSM) rating of the 1N4007 diode is 30 A.
  5. What is the operating temperature range of the 1N4007 diode?
    The operating temperature range of the 1N4007 diode is from -65°C to +150°C.
  6. What is the package type of the 1N4007 diode?
    The 1N4007 diode is packaged in a DO-41 (DO-204AL) case.
  7. What are some common applications of the 1N4007 diode?
    The 1N4007 diode is commonly used in power supplies, inverters, converters, and freewheeling diodes, as well as in automotive and consumer electronics.
  8. What is the junction temperature maximum of the 1N4007 diode?
    The junction temperature maximum (TJ max) of the 1N4007 diode is 150°C.
  9. Does the 1N4007 diode have any special thermal characteristics?
    The 1N4007 diode has a typical thermal resistance junction to ambient (RθJA) of 50 °C/W.
  10. Is the 1N4007 diode suitable for high-frequency applications?
    The 1N4007 diode, being a standard recovery diode, may not be the best choice for high-frequency applications. For such applications, ultrafast or fast recovery diodes might be more suitable.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):1000 V
Current - Average Rectified (Io):1A
Voltage - Forward (Vf) (Max) @ If:1.1 V @ 1 A
Speed:Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr):- 
Current - Reverse Leakage @ Vr:5 µA @ 1000 V
Capacitance @ Vr, F:15pF @ 4V, 1MHz
Mounting Type:Through Hole
Package / Case:DO-204AL, DO-41, Axial
Supplier Device Package:DO-204AL (DO-41)
Operating Temperature - Junction:-55°C ~ 150°C
0 Remaining View Similar

In Stock

-
411

Please send RFQ , we will respond immediately.

Same Series
1N4005/54
1N4005/54
DIODE GEN PURP 600V 1A DO204AL
1N4001/54
1N4001/54
DIODE GEN PURP 50V 1A DO204AL
1N4002/54
1N4002/54
DIODE GEN PURP 100V 1A DO204AL
1N4006/54
1N4006/54
DIODE GEN PURP 800V 1A DO204AL
1N4003/54
1N4003/54
DIODE GEN PURP 200V 1A DO204AL
1N4004/54
1N4004/54
DIODE GEN PURP 400V 1A DO204AL

Similar Products

Part Number 1N4007/54 1N4006/54
Manufacturer Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division
Product Status Obsolete Obsolete
Diode Type Standard Standard
Voltage - DC Reverse (Vr) (Max) 1000 V 800 V
Current - Average Rectified (Io) 1A 1A
Voltage - Forward (Vf) (Max) @ If 1.1 V @ 1 A 1.1 V @ 1 A
Speed Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr) - -
Current - Reverse Leakage @ Vr 5 µA @ 1000 V 5 µA @ 800 V
Capacitance @ Vr, F 15pF @ 4V, 1MHz 15pF @ 4V, 1MHz
Mounting Type Through Hole Through Hole
Package / Case DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial
Supplier Device Package DO-204AL (DO-41) DO-204AL (DO-41)
Operating Temperature - Junction -55°C ~ 150°C -55°C ~ 150°C

Related Product By Categories

PMEG2010EA,115
PMEG2010EA,115
Nexperia USA Inc.
DIODE SCHOTTKY 20V 1A SOD323
BAT54WS_R1_00001
BAT54WS_R1_00001
Panjit International Inc.
SOD-323, SKY
STPS1045D
STPS1045D
STMicroelectronics
DIODE SCHOTTKY 45V 10A TO220AC
PMEG3015EH,115
PMEG3015EH,115
Nexperia USA Inc.
DIODE SCHOTTKY 30V 1.5A SOD123F
STPSC4H065D
STPSC4H065D
STMicroelectronics
DIODE SCHOTTKY 650V 4A TO220AC
BAT43WS RRG
BAT43WS RRG
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 30V 200MA SOD323F
MBR2H100SFT3G
MBR2H100SFT3G
onsemi
DIODE SCHOTTKY 100V 2A SOD123FL
NSR0340P2T5G
NSR0340P2T5G
onsemi
DIODE SCHOTTKY 40V 200MA SOD923
1N4148WHE3-TP
1N4148WHE3-TP
Micro Commercial Co
400MW SWITCHING DIODES SOD-123
STTH108
STTH108
STMicroelectronics
DIODE GEN PURP 800V 1A DO41
BAT54-D87Z
BAT54-D87Z
onsemi
30V SOT23 SCHOTTKY DIODE
BAT43 A0
BAT43 A0
Taiwan Semiconductor Corporation
DIODE SCHOTTKY DO-35

Related Product By Brand

SM15T18A-M3/9AT
SM15T18A-M3/9AT
Vishay General Semiconductor - Diodes Division
TVS DIODE 15.3VWM 25.2VC DO214AB
SM15T30CAHE3_A/I
SM15T30CAHE3_A/I
Vishay General Semiconductor - Diodes Division
TVS DIODE 25.6VWM 41.5VC DO214AB
SM6T24CAHM3/I
SM6T24CAHM3/I
Vishay General Semiconductor - Diodes Division
TVS DIODE 20.5VWM 33.2VC DO214AA
BAT54C-HE3-18
BAT54C-HE3-18
Vishay General Semiconductor - Diodes Division
DIODE ARRAY SCHOTTKY 30V SOT23
BAS70-05-G3-18
BAS70-05-G3-18
Vishay General Semiconductor - Diodes Division
DIODE ARRAY SCHOTTKY 70V SOT23
BYQ28EB-200HE3_A/P
BYQ28EB-200HE3_A/P
Vishay General Semiconductor - Diodes Division
DIODE ARRAY GP 200V 5A TO263AB
MURD620CTTRL
MURD620CTTRL
Vishay General Semiconductor - Diodes Division
DIODE ARRAY GP 200V 3A DPAK
1N4148W-E3-18
1N4148W-E3-18
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 75V 150MA SOD123
1N4007GPHM3/54
1N4007GPHM3/54
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 1KV 1A DO204AL
BZX84B3V9-E3-08
BZX84B3V9-E3-08
Vishay General Semiconductor - Diodes Division
DIODE ZENER 3.9V 300MW SOT23-3
BZX84C12-E3-18
BZX84C12-E3-18
Vishay General Semiconductor - Diodes Division
DIODE ZENER 12V 300MW SOT23-3
BZX384C75-HE3-08
BZX384C75-HE3-08
Vishay General Semiconductor - Diodes Division
DIODE ZENER 75V 200MW SOD323