1N4001GH
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Taiwan Semiconductor Corporation 1N4001GH

Manufacturer No:
1N4001GH
Manufacturer:
Taiwan Semiconductor Corporation
Package:
Tape & Reel (TR)
Description:
DIODE GEN PURP 1A 50V DO-41
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The 1N4001GH diode, produced by Taiwan Semiconductor Corporation, is a standard low-cost silicon rectifier diode. It is part of the 1N4001G series, which includes diodes with various voltage ratings. The 1N4001GH is specifically rated for 50V and is designed for general-purpose use in power supplies, voltage converters, and other electronic circuits. This diode is known for its high current capability, low forward voltage drop, and high reliability, making it a versatile component in a wide range of applications.

Key Specifications

Parameter Value Unit
Average Forward Current (IF) 1 A
Surge Peak Forward Current (IFSM) 30 A
Repetitive Peak Reverse Voltage (VRRM) 50 V
RMS Reverse Voltage (VR(RMS)) 35 V
Reverse Current (IR) 5 µA
Forward Voltage Drop (VF) 1.1 V
Junction Temperature (TJ) -55 to +150 °C
Package DO-204AL (DO-41)

Key Features

  • AEC-Q101 qualified available, ensuring high reliability for automotive applications.
  • Glass passivated chip junction for enhanced durability.
  • High current capability with a low forward voltage drop (VF) of 1.1V.
  • High surge current capability, with a non-repetitive peak forward current of 30A.
  • Low power loss and high efficiency.
  • RoHS compliant and halogen-free according to IEC 61249-2-21.
  • Pure tin plated leads, solderable per J-STD-002.

Applications

  • DC to DC converters.
  • Switching mode converters and inverters.
  • General purpose rectification in power supplies.
  • Protection devices to prevent reverse polarity problems.
  • Half Wave and Full Wave rectifiers.
  • Current flow regulators.

Q & A

  1. What is the maximum forward current of the 1N4001GH diode?

    The maximum forward current is 1A.

  2. What is the peak repetitive reverse voltage of the 1N4001GH diode?

    The peak repetitive reverse voltage is 50V.

  3. What is the surge peak forward current of the 1N4001GH diode?

    The surge peak forward current is 30A.

  4. What is the forward voltage drop of the 1N4001GH diode?

    The forward voltage drop is 1.1V.

  5. Is the 1N4001GH diode RoHS compliant?

    Yes, the 1N4001GH diode is RoHS compliant.

  6. What is the package type of the 1N4001GH diode?

    The package type is DO-204AL (DO-41).

  7. What are some common applications of the 1N4001GH diode?

    Common applications include DC to DC converters, switching mode converters, and general purpose rectification in power supplies.

  8. Is the 1N4001GH diode suitable for automotive applications?

    Yes, it is AEC-Q101 qualified, making it suitable for automotive applications.

  9. What is the junction temperature range of the 1N4001GH diode?

    The junction temperature range is -55 to +150°C.

  10. How is the polarity of the 1N4001GH diode indicated?

    The polarity is indicated by a cathode band.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):50 V
Current - Average Rectified (Io):1A (DC)
Voltage - Forward (Vf) (Max) @ If:1 V @ 1 A
Speed:Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr):- 
Current - Reverse Leakage @ Vr:5 µA @ 50 V
Capacitance @ Vr, F:10pF @ 4V, 1MHz
Mounting Type:Through Hole
Package / Case:DO-204AL, DO-41, Axial
Supplier Device Package:DO-204AL (DO-41)
Operating Temperature - Junction:-55°C ~ 150°C
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Similar Products

Part Number 1N4001GH 1N4001GP 1N4002GH 1N4001G
Manufacturer Taiwan Semiconductor Corporation onsemi Taiwan Semiconductor Corporation onsemi
Product Status Active Obsolete Active Active
Diode Type Standard Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 50 V 50 V 100 V 50 V
Current - Average Rectified (Io) 1A (DC) 1A 1A (DC) 1A
Voltage - Forward (Vf) (Max) @ If 1 V @ 1 A 1.1 V @ 1 A 1 V @ 1 A 1.1 V @ 1 A
Speed Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr) - - - -
Current - Reverse Leakage @ Vr 5 µA @ 50 V 10 µA @ 50 V 5 µA @ 100 V 10 µA @ 50 V
Capacitance @ Vr, F 10pF @ 4V, 1MHz 15pF @ 4V, 1MHz 10pF @ 4V, 1MHz -
Mounting Type Through Hole Through Hole Through Hole Through Hole
Package / Case DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial
Supplier Device Package DO-204AL (DO-41) DO-41 DO-204AL (DO-41) Axial
Operating Temperature - Junction -55°C ~ 150°C -55°C ~ 175°C -55°C ~ 150°C -65°C ~ 175°C

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