1N4001GH
  • Share:

Taiwan Semiconductor Corporation 1N4001GH

Manufacturer No:
1N4001GH
Manufacturer:
Taiwan Semiconductor Corporation
Package:
Tape & Reel (TR)
Description:
DIODE GEN PURP 1A 50V DO-41
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The 1N4001GH diode, produced by Taiwan Semiconductor Corporation, is a standard low-cost silicon rectifier diode. It is part of the 1N4001G series, which includes diodes with various voltage ratings. The 1N4001GH is specifically rated for 50V and is designed for general-purpose use in power supplies, voltage converters, and other electronic circuits. This diode is known for its high current capability, low forward voltage drop, and high reliability, making it a versatile component in a wide range of applications.

Key Specifications

Parameter Value Unit
Average Forward Current (IF) 1 A
Surge Peak Forward Current (IFSM) 30 A
Repetitive Peak Reverse Voltage (VRRM) 50 V
RMS Reverse Voltage (VR(RMS)) 35 V
Reverse Current (IR) 5 µA
Forward Voltage Drop (VF) 1.1 V
Junction Temperature (TJ) -55 to +150 °C
Package DO-204AL (DO-41)

Key Features

  • AEC-Q101 qualified available, ensuring high reliability for automotive applications.
  • Glass passivated chip junction for enhanced durability.
  • High current capability with a low forward voltage drop (VF) of 1.1V.
  • High surge current capability, with a non-repetitive peak forward current of 30A.
  • Low power loss and high efficiency.
  • RoHS compliant and halogen-free according to IEC 61249-2-21.
  • Pure tin plated leads, solderable per J-STD-002.

Applications

  • DC to DC converters.
  • Switching mode converters and inverters.
  • General purpose rectification in power supplies.
  • Protection devices to prevent reverse polarity problems.
  • Half Wave and Full Wave rectifiers.
  • Current flow regulators.

Q & A

  1. What is the maximum forward current of the 1N4001GH diode?

    The maximum forward current is 1A.

  2. What is the peak repetitive reverse voltage of the 1N4001GH diode?

    The peak repetitive reverse voltage is 50V.

  3. What is the surge peak forward current of the 1N4001GH diode?

    The surge peak forward current is 30A.

  4. What is the forward voltage drop of the 1N4001GH diode?

    The forward voltage drop is 1.1V.

  5. Is the 1N4001GH diode RoHS compliant?

    Yes, the 1N4001GH diode is RoHS compliant.

  6. What is the package type of the 1N4001GH diode?

    The package type is DO-204AL (DO-41).

  7. What are some common applications of the 1N4001GH diode?

    Common applications include DC to DC converters, switching mode converters, and general purpose rectification in power supplies.

  8. Is the 1N4001GH diode suitable for automotive applications?

    Yes, it is AEC-Q101 qualified, making it suitable for automotive applications.

  9. What is the junction temperature range of the 1N4001GH diode?

    The junction temperature range is -55 to +150°C.

  10. How is the polarity of the 1N4001GH diode indicated?

    The polarity is indicated by a cathode band.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):50 V
Current - Average Rectified (Io):1A (DC)
Voltage - Forward (Vf) (Max) @ If:1 V @ 1 A
Speed:Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr):- 
Current - Reverse Leakage @ Vr:5 µA @ 50 V
Capacitance @ Vr, F:10pF @ 4V, 1MHz
Mounting Type:Through Hole
Package / Case:DO-204AL, DO-41, Axial
Supplier Device Package:DO-204AL (DO-41)
Operating Temperature - Junction:-55°C ~ 150°C
0 Remaining View Similar

In Stock

$0.08
8,884

Please send RFQ , we will respond immediately.

Same Series
RD15S10HE2X/AA
RD15S10HE2X/AA
CONN D-SUB RCPT 15POS CRIMP
DD44S320000
DD44S320000
CONN D-SUB HD RCPT 44P VERT SLDR
DD15S200V3S
DD15S200V3S
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S20W0S
DD15S20W0S
CONN D-SUB HD RCPT 15P SLDR CUP
CBC13W3S10HV30/AA
CBC13W3S10HV30/AA
CONN D-SUB RCPT 13POS CRIMP
CBC9W4S10HTS/AA
CBC9W4S10HTS/AA
CONN D-SUB RCPT 9POS CRIMP
DD15S20J0S
DD15S20J0S
CONN D-SUB HD RCPT 15P SLDR CUP
DD26M20HE2Z/AA
DD26M20HE2Z/AA
CONN D-SUB HD PLUG 26P SLDR CUP
DD26S2S0T2X/AA
DD26S2S0T2X/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2S0V5X
DD26S2S0V5X
CONN D-SUB HD RCPT 26P SLDR CUP
RD50S100V50
RD50S100V50
CONN D-SUB RCPT 50POS CRIMP
DD44S3200T2X
DD44S3200T2X
CONN D-SUB HD RCPT 44P VERT SLDR

Similar Products

Part Number 1N4001GH 1N4001GP 1N4002GH 1N4001G
Manufacturer Taiwan Semiconductor Corporation onsemi Taiwan Semiconductor Corporation onsemi
Product Status Active Obsolete Active Active
Diode Type Standard Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 50 V 50 V 100 V 50 V
Current - Average Rectified (Io) 1A (DC) 1A 1A (DC) 1A
Voltage - Forward (Vf) (Max) @ If 1 V @ 1 A 1.1 V @ 1 A 1 V @ 1 A 1.1 V @ 1 A
Speed Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr) - - - -
Current - Reverse Leakage @ Vr 5 µA @ 50 V 10 µA @ 50 V 5 µA @ 100 V 10 µA @ 50 V
Capacitance @ Vr, F 10pF @ 4V, 1MHz 15pF @ 4V, 1MHz 10pF @ 4V, 1MHz -
Mounting Type Through Hole Through Hole Through Hole Through Hole
Package / Case DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial
Supplier Device Package DO-204AL (DO-41) DO-41 DO-204AL (DO-41) Axial
Operating Temperature - Junction -55°C ~ 150°C -55°C ~ 175°C -55°C ~ 150°C -65°C ~ 175°C

Related Product By Categories

1N4148WS RRG
1N4148WS RRG
Taiwan Semiconductor Corporation
DIODE GEN PURP 75V 150MA SOD323F
BAT54-AU_R1_000A1
BAT54-AU_R1_000A1
Panjit International Inc.
SOT-23, SKY
BAS20WTHE3-TP
BAS20WTHE3-TP
Micro Commercial Co
DIODE GEN PURP 150V 200MA SOT323
FSV10100V
FSV10100V
onsemi
DIODE SCHOTTKY 100V 10A TO277-3
BAS70L,315
BAS70L,315
Nexperia USA Inc.
DIODE SCHOT 70V 70MA DFN1006-2
MBRF40250TG
MBRF40250TG
onsemi
DIODE SCHOTTKY 250V 40A TO220FP
BAT54W-E3-18
BAT54W-E3-18
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 30V 200MA SOD123
STPS2H100AFN
STPS2H100AFN
STMicroelectronics
100 V, 2 A POWER SCHOTTKY RECTIF
MURS140-13
MURS140-13
Diodes Incorporated
DIODE GEN PURP 400V 1A SMB
1N4001GP-M3/54
1N4001GP-M3/54
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 50V 1A DO204AL
NRVBA140T3G
NRVBA140T3G
onsemi
DIODE SCHOTTKY 40V 1A SMA
PMEG6010CEJ/ZLX
PMEG6010CEJ/ZLX
Nexperia USA Inc.
DIODE SCHOTTKY 60V 1A SC90

Related Product By Brand

MUR1660CTH
MUR1660CTH
Taiwan Semiconductor Corporation
DIODE ARRAY GP 600V 16A TO220AB
1N4148WS-G RVG
1N4148WS-G RVG
Taiwan Semiconductor Corporation
DIODE GEN PURP 75V 150MA SOD323
BAS316 RRG
BAS316 RRG
Taiwan Semiconductor Corporation
DIODE GEN PURP 250MA SOD323
1N4001G R0G
1N4001G R0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 50V 1A DO204AL
1N5406GH
1N5406GH
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 3A DO201AD
BZX84C3V0 RFG
BZX84C3V0 RFG
Taiwan Semiconductor Corporation
DIODE ZENER 3V 300MW SOT23
BZV55C2V7 L0G
BZV55C2V7 L0G
Taiwan Semiconductor Corporation
DIODE ZENER 2.7V 500MW MINI MELF
BZX585B6V8 RSG
BZX585B6V8 RSG
Taiwan Semiconductor Corporation
DIODE ZENER 6.8V 200MW SOD523F
BZX84C2V4 RFG
BZX84C2V4 RFG
Taiwan Semiconductor Corporation
DIODE ZENER 2.4V 300MW SOT23
BC846B RFG
BC846B RFG
Taiwan Semiconductor Corporation
TRANS NPN 65V 0.1A SOT23
BC807-16 RFG
BC807-16 RFG
Taiwan Semiconductor Corporation
TRANS PNP 45V 0.5A SOT23
BC857A RFG
BC857A RFG
Taiwan Semiconductor Corporation
TRANS PNP 45V 0.1A SOT23