1N4001GH
  • Share:

Taiwan Semiconductor Corporation 1N4001GH

Manufacturer No:
1N4001GH
Manufacturer:
Taiwan Semiconductor Corporation
Package:
Tape & Reel (TR)
Description:
DIODE GEN PURP 1A 50V DO-41
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The 1N4001GH diode, produced by Taiwan Semiconductor Corporation, is a standard low-cost silicon rectifier diode. It is part of the 1N4001G series, which includes diodes with various voltage ratings. The 1N4001GH is specifically rated for 50V and is designed for general-purpose use in power supplies, voltage converters, and other electronic circuits. This diode is known for its high current capability, low forward voltage drop, and high reliability, making it a versatile component in a wide range of applications.

Key Specifications

Parameter Value Unit
Average Forward Current (IF) 1 A
Surge Peak Forward Current (IFSM) 30 A
Repetitive Peak Reverse Voltage (VRRM) 50 V
RMS Reverse Voltage (VR(RMS)) 35 V
Reverse Current (IR) 5 µA
Forward Voltage Drop (VF) 1.1 V
Junction Temperature (TJ) -55 to +150 °C
Package DO-204AL (DO-41)

Key Features

  • AEC-Q101 qualified available, ensuring high reliability for automotive applications.
  • Glass passivated chip junction for enhanced durability.
  • High current capability with a low forward voltage drop (VF) of 1.1V.
  • High surge current capability, with a non-repetitive peak forward current of 30A.
  • Low power loss and high efficiency.
  • RoHS compliant and halogen-free according to IEC 61249-2-21.
  • Pure tin plated leads, solderable per J-STD-002.

Applications

  • DC to DC converters.
  • Switching mode converters and inverters.
  • General purpose rectification in power supplies.
  • Protection devices to prevent reverse polarity problems.
  • Half Wave and Full Wave rectifiers.
  • Current flow regulators.

Q & A

  1. What is the maximum forward current of the 1N4001GH diode?

    The maximum forward current is 1A.

  2. What is the peak repetitive reverse voltage of the 1N4001GH diode?

    The peak repetitive reverse voltage is 50V.

  3. What is the surge peak forward current of the 1N4001GH diode?

    The surge peak forward current is 30A.

  4. What is the forward voltage drop of the 1N4001GH diode?

    The forward voltage drop is 1.1V.

  5. Is the 1N4001GH diode RoHS compliant?

    Yes, the 1N4001GH diode is RoHS compliant.

  6. What is the package type of the 1N4001GH diode?

    The package type is DO-204AL (DO-41).

  7. What are some common applications of the 1N4001GH diode?

    Common applications include DC to DC converters, switching mode converters, and general purpose rectification in power supplies.

  8. Is the 1N4001GH diode suitable for automotive applications?

    Yes, it is AEC-Q101 qualified, making it suitable for automotive applications.

  9. What is the junction temperature range of the 1N4001GH diode?

    The junction temperature range is -55 to +150°C.

  10. How is the polarity of the 1N4001GH diode indicated?

    The polarity is indicated by a cathode band.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):50 V
Current - Average Rectified (Io):1A (DC)
Voltage - Forward (Vf) (Max) @ If:1 V @ 1 A
Speed:Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr):- 
Current - Reverse Leakage @ Vr:5 µA @ 50 V
Capacitance @ Vr, F:10pF @ 4V, 1MHz
Mounting Type:Through Hole
Package / Case:DO-204AL, DO-41, Axial
Supplier Device Package:DO-204AL (DO-41)
Operating Temperature - Junction:-55°C ~ 150°C
0 Remaining View Similar

In Stock

$0.08
8,884

Please send RFQ , we will respond immediately.

Same Series
DD15S20L0S
DD15S20L0S
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S20Z0X
DD15S20Z0X
CONN D-SUB HD RCPT 15P SLDR CUP
CBC13W3S10HE2X/AA
CBC13W3S10HE2X/AA
CONN D-SUB RCPT 13POS CRIMP
DD26M20HV30/AA
DD26M20HV30/AA
CONN D-SUB HD PLUG 26P SLDR CUP
DD26S2S0TX/AA
DD26S2S0TX/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2S0V5X
DD26S2S0V5X
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2S50T0
DD26S2S50T0
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S200V50
DD26S200V50
CONN D-SUB HD RCPT 26P SLDR CUP
DD15S20Z0S
DD15S20Z0S
CONN D-SUB HD RCPT 15P SLDR CUP
DD26S20W0X/AA
DD26S20W0X/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S20WT0/AA
DD26S20WT0/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S20J00
DD26S20J00
CONN D-SUB HD RCPT 26P SLDR CUP

Similar Products

Part Number 1N4001GH 1N4001GP 1N4002GH 1N4001G
Manufacturer Taiwan Semiconductor Corporation onsemi Taiwan Semiconductor Corporation onsemi
Product Status Active Obsolete Active Active
Diode Type Standard Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 50 V 50 V 100 V 50 V
Current - Average Rectified (Io) 1A (DC) 1A 1A (DC) 1A
Voltage - Forward (Vf) (Max) @ If 1 V @ 1 A 1.1 V @ 1 A 1 V @ 1 A 1.1 V @ 1 A
Speed Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr) - - - -
Current - Reverse Leakage @ Vr 5 µA @ 50 V 10 µA @ 50 V 5 µA @ 100 V 10 µA @ 50 V
Capacitance @ Vr, F 10pF @ 4V, 1MHz 15pF @ 4V, 1MHz 10pF @ 4V, 1MHz -
Mounting Type Through Hole Through Hole Through Hole Through Hole
Package / Case DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial
Supplier Device Package DO-204AL (DO-41) DO-41 DO-204AL (DO-41) Axial
Operating Temperature - Junction -55°C ~ 150°C -55°C ~ 175°C -55°C ~ 150°C -65°C ~ 175°C

Related Product By Categories

BAT54WS_R1_00001
BAT54WS_R1_00001
Panjit International Inc.
SOD-323, SKY
STTH5L06RL
STTH5L06RL
STMicroelectronics
DIODE GEN PURP 600V 5A DO201AD
STPS1045D
STPS1045D
STMicroelectronics
DIODE SCHOTTKY 45V 10A TO220AC
PMEG2015EPK,315
PMEG2015EPK,315
NXP USA Inc.
NOW NEXPERIA PMEG2015EPK - RECTI
MBRS140T3G
MBRS140T3G
onsemi
DIODE SCHOTTKY 40V 1A SMB
STPS1L60ZF
STPS1L60ZF
STMicroelectronics
DIODE SCHOTTKY 60V 1A SOD123F
BAS16WS-G3-08
BAS16WS-G3-08
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 75V 250MA SOD323
1N4002GP
1N4002GP
Fairchild Semiconductor
RECTIFIER DIODE
FFSB10120A-F085
FFSB10120A-F085
onsemi
1200V 10A AUTO SIC SBD
MUR240
MUR240
onsemi
DIODE GEN PURP 400V 2A AXIAL
MBR120VLSFT1H
MBR120VLSFT1H
onsemi
DIODE SCHOTTKY
BAT54/LF1R
BAT54/LF1R
NXP USA Inc.
DIODE SCHOTTKY TO-236AB

Related Product By Brand

1.5KE68AH
1.5KE68AH
Taiwan Semiconductor Corporation
TVS DIODE 58.1VWM 92VC DO201
MUR1620CTHC0G
MUR1620CTHC0G
Taiwan Semiconductor Corporation
DIODE ARRAY GP 200V 16A TO220AB
1N4001G R1G
1N4001G R1G
Taiwan Semiconductor Corporation
DIODE GEN PURP 50V 1A DO204AL
BAT42 R0
BAT42 R0
Taiwan Semiconductor Corporation
DIODE SCHOTTKY DO-35
BAT43 A0
BAT43 A0
Taiwan Semiconductor Corporation
DIODE SCHOTTKY DO-35
BAT43-L0 A0
BAT43-L0 A0
Taiwan Semiconductor Corporation
DIODE SCHOTTKY DO-35
BZV55C3V9 L0G
BZV55C3V9 L0G
Taiwan Semiconductor Corporation
DIODE ZENER 3.9V 500MW MINI MELF
BZV55B22 L0G
BZV55B22 L0G
Taiwan Semiconductor Corporation
DIODE ZENER 22V 500MW MINI MELF
BZV55B8V2 L1G
BZV55B8V2 L1G
Taiwan Semiconductor Corporation
DIODE ZENER 8.2V 500MW MINI MELF
BZV55C3V6 L1G
BZV55C3V6 L1G
Taiwan Semiconductor Corporation
DIODE ZENER 3.6V 500MW MINI MELF
1N4733G A0G
1N4733G A0G
Taiwan Semiconductor Corporation
DIODE ZENER 5.1V 1W DO204AL
BZX79C15 A0G
BZX79C15 A0G
Taiwan Semiconductor Corporation
DIODE ZENER 15V 500MW DO35