Overview
The VND10N06-E, produced by STMicroelectronics, is a monolithic device designed using the VIPower M0-2 technology. This fully autoprotected Power MOSFET is intended to replace standard Power MOSFETs in applications ranging from DC to 50 kHz. The device integrates several protection features, including thermal shutdown, linear current limitation, short circuit protection, and an integrated clamp, making it robust and reliable in harsh environments.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Drain-Source Voltage (VDS) | Internally clamped | V |
| Input Voltage (VIN) | Internally clamped | V |
| Input Current (Iin) | ±20 | mA |
| Drain Current (ID) | Internally limited (typ. 10 A) | A |
| Drain-Source Clamp Voltage (VCLAMP) | 60 | V |
| Static Drain-Source On Resistance (RDS(on)) | 0.3 | Ω |
| Thermal Resistance Junction-Case (Rthj-case) | 3.5 | °C/W |
| Operating Junction Temperature (Tj) | Internally limited (max. 150°C) | °C |
| Storage Temperature (Tstg) | -55 to 150 | °C |
Key Features
- Linear current limitation
- Thermal shutdown
- Short circuit protection
- Integrated clamp
- Low current drawn from input pin
- Logic level input threshold
- ESD protection
- Schmitt trigger on input
- High noise immunity
Applications
The VND10N06-E is suitable for a variety of applications, including but not limited to:
- DC to 50 kHz switching applications
- Automotive systems requiring robust protection features
- Industrial control systems
- Power management in electronic devices
Q & A
- What is the typical drain current limit of the VND10N06-E?
The typical drain current limit is 10 A. - What is the maximum operating junction temperature for the VND10N06-E?
The maximum operating junction temperature is internally limited, but it does not exceed 150°C. - Does the VND10N06-E have built-in thermal shutdown?
Yes, the device has built-in thermal shutdown. - What is the static Drain-Source on resistance (RDS(on)) of the VND10N06-E?
The static Drain-Source on resistance (RDS(on)) is 0.3 Ω. - What type of input threshold does the VND10N06-E have?
The device has a logic level input threshold. - Is the VND10N06-E protected against electrostatic discharge (ESD)?
Yes, the device has ESD protection. - What is the thermal resistance junction-case (Rthj-case) of the VND10N06-E?
The thermal resistance junction-case (Rthj-case) is 3.5 °C/W. - What are the package options for the VND10N06-E?
The device is available in DPAK and IPAK packages. - What is the storage temperature range for the VND10N06-E?
The storage temperature range is -55 to 150 °C. - Does the VND10N06-E have an integrated clamp?
Yes, the device includes an integrated clamp.
