Overview
The VND10N06 and VND10N06-1, including the VND10N0613TR, are monolithic devices designed by STMicroelectronics using the VIPower M0-2 technology. These fully autoprotected Power MOSFETs are intended to replace standard Power MOSFETs in applications ranging from DC to 50 kHz. They are built with integrated protection features such as thermal shutdown, linear current limitation, and overvoltage clamping, making them robust in harsh environments.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Drain-Source Voltage (VDS) | Internally clamped | V |
| Input Voltage (VIN) | Internally clamped | V |
| Input Current (Iin) | ±20 | mA |
| Drain Current (ID) | Internally limited | A |
| Reverse DC Output Current (IR) | -15 | A |
| Electrostatic Discharge (VESD) | 4000 | V |
| Total Dissipation at Tc = 25°C (Ptot) | 35 | W |
| Operating Junction Temperature (Tj) | Internally limited | °C |
| Case Operating Temperature (Tc) | Internally limited | °C |
| Storage Temperature (Tstg) | -55 to 150 | °C |
| Thermal Resistance Junction-Case (Rthj-case) | 3.5 | °C/W |
| Thermal Resistance Junction-Ambient (Rthj-amb) | 100 | °C/W |
| Static Drain-Source On Resistance (RDS(on)) | 0.15 - 0.3 | Ω |
| Drain-Source Clamp Voltage (VCLAMP) | 50 - 70 | V |
| Current Limitation (Ilim) | 6 - 15 | A |
Key Features
- Linear current limitation
- Thermal shutdown
- Short circuit protection
- Integrated clamp
- Low current drawn from input pin
- Logic level input threshold
- ESD protection
- Schmitt trigger on input
- High noise immunity
Applications
The VND10N06 and VND10N06-1 are suitable for a variety of applications, including but not limited to:
- DC to 50 kHz switching applications
- Automotive systems requiring robust protection features
- Industrial power management systems
- High-reliability power switching in harsh environments
Q & A
- What is the maximum drain-source voltage for the VND10N06?
The drain-source voltage is internally clamped, but it should not exceed the specified operating conditions to avoid damage. - What is the typical current limitation for the VND10N06?
The typical current limitation is 10 A. - What is the thermal shutdown temperature for the VND10N06?
The thermal shutdown temperature is 150°C. - Does the VND10N06 have ESD protection?
Yes, the VND10N06 has ESD protection with a rating of 4000 V. - What is the maximum total dissipation at Tc = 25°C for the VND10N06?
The maximum total dissipation at Tc = 25°C is 35 W. - What are the storage temperature ranges for the VND10N06?
The storage temperature range is -55 to 150°C. - What is the typical static drain-source on resistance for the VND10N06?
The typical static drain-source on resistance is 0.3 Ω. - Does the VND10N06 have an integrated clamp?
Yes, the VND10N06 has an integrated Zener clamp between the drain pin and the gate of the internal Power MOSFET. - What is the turn-on delay time for the VND10N06?
The turn-on delay time is typically 1100 ns to 1600 ns depending on the test conditions. - What are the package options available for the VND10N06?
The VND10N06 is available in DPAK and IPAK packages.
