Overview
The VND10N06-1-E is a monolithic power MOSFET device designed by STMicroelectronics using their VIPower M0-2 technology. This component is intended to replace standard power MOSFETs in applications ranging from DC to 50 kHz. It is part of the OMNIFET family, known for its integrated protection features and robust performance in harsh environments.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Drain-Source Voltage (VDS) | Internally clamped | V |
| Input Voltage (VIN) | Internally clamped | V |
| Drain Current (ID) | 6-10 A | A |
| Reverse DC Output Current (IR) | -15 A | A |
| Electrostatic Discharge (VESD) | 4000 V | V |
| Total Dissipation at Tc = 25°C (Ptot) | 35 W | W |
| Operating Junction Temperature (Tj) | Internally limited | °C |
| Case Operating Temperature (Tc) | Internally limited | °C |
| Storage Temperature (Tstg) | -55 to 150 °C | °C |
| Thermal Resistance Junction-Case (Rthj-case) | 3.5 °C/W | °C/W |
| Thermal Resistance Junction-Ambient (Rthj-amb) | 100 °C/W | °C/W |
| Drain-Source Clamp Voltage (VCLAMP) | 50-70 V | V |
| On-State Resistance (RDS(on)) | 0.3 Ω | Ω |
| Input Low Level Voltage (VIL) | 1.5 V | V |
| Input High Level Voltage (VIH) | 3.2 V | V |
| Supply Current from Input Pin (IISS) | 150-300 µA | µA |
| Output Capacitance (COSS) | 350-500 pF | pF |
| Forward On Voltage (VSD) | 0.8-1.6 V | V |
| Reverse Recovery Time (trr) | 125 ns | ns |
| Reverse Recovery Charge (Qrr) | 0.22 µC | µC |
| Reverse Recovery Current (IRRM) | 3.5 A | A |
| Drain Current Limit (Ilim) | 6-10 A | A |
| Overtemperature Shutdown (Tjsh) | 150 °C | °C |
| Overtemperature Reset (Tjrs) | 135 °C | °C |
| Single Pulse Avalanche Energy (Eas) | 250 mJ | mJ |
Key Features
- Linear current limitation
- Thermal shutdown
- Short circuit protection
- Integrated clamp
- Low current drawn from input pin
- Logic level input threshold
- ESD protection
- Schmitt trigger on input
- High noise immunity
- Active current limiter circuit
- Overtemperature and overvoltage protection
Applications
The VND10N06-1-E is suitable for a variety of applications, including:
- DC to 50 kHz switching applications
- Replacement of standard power MOSFETs in harsh environments
- Power distribution and load driving
- Automotive and industrial control systems
- Motor control and power management systems
Q & A
- What is the maximum drain-source voltage for the VND10N06-1-E?
The maximum drain-source voltage (VDS) is internally clamped, but the device is rated for up to 60V.
- What is the typical on-state resistance (RDS(on)) of the VND10N06-1-E?
The typical on-state resistance (RDS(on)) is 0.3 Ω.
- What are the key protection features of the VND10N06-1-E?
The key protection features include linear current limitation, thermal shutdown, short circuit protection, integrated clamp, and overtemperature protection.
- What is the operating junction temperature range for the VND10N06-1-E?
The operating junction temperature (Tj) is internally limited, but it shuts down at 150°C and resets at 135°C.
- What is the maximum total dissipation at Tc = 25°C for the VND10N06-1-E?
The maximum total dissipation at Tc = 25°C (Ptot) is 35 W.
- What is the input type of the VND10N06-1-E?
The input type is non-inverting with a logic level input threshold.
- What is the typical supply current from the input pin (IISS) of the VND10N06-1-E?
The typical supply current from the input pin (IISS) is 150-300 µA.
- What is the reverse recovery time (trr) of the VND10N06-1-E?
The reverse recovery time (trr) is 125 ns.
- What are the common applications of the VND10N06-1-E?
Common applications include DC to 50 kHz switching, power distribution, load driving, automotive, and industrial control systems.
- What package types are available for the VND10N06-1-E?
The device is available in TO-251-3 Short Leads, IPak, and TO-251AA packages.
- Is the VND10N06-1-E RoHS compliant?
Yes, the VND10N06-1-E is RoHS compliant.
