TD350IDT
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STMicroelectronics TD350IDT

Manufacturer No:
TD350IDT
Manufacturer:
STMicroelectronics
Package:
Tape & Reel (TR)
Description:
IC GATE DRVR HIGH-SIDE 14SO
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The TD350IDT from STMicroelectronics is a high-performance gate driver IC designed to drive N-channel Enhancement Mode GaN (Gallium Nitride) power devices, as well as IGBTs and power MOSFETs. This device is engineered to provide robust control and protection functions, enabling the design of high-reliability power systems. The TD350IDT is particularly suited for applications requiring high efficiency, reliability, and compact design.

Key Specifications

ParameterValue
Package Type14-pin SOIC
Input Voltage5V
Output ConfigurationNon-Inverting High-Side Gate Driver
CompatibilityN-channel Enhancement Mode GaN, IGBT, Power MOSFET
Operating Temperature-40°C to 150°C

Key Features

  • Advanced control and protection functions for high reliability systems
  • High-side gate driver configuration
  • Compatibility with N-channel Enhancement Mode GaN, IGBT, and power MOSFET devices
  • Compact 14-pin SOIC package
  • Operating temperature range from -40°C to 150°C

Applications

The TD350IDT is suitable for a variety of high-power applications, including but not limited to:

  • Power supplies and DC-DC converters
  • Motor drives and control systems
  • Renewable energy systems (e.g., solar and wind power)
  • Industrial automation and control systems
  • Electric vehicles and charging infrastructure

Q & A

  1. What is the primary function of the TD350IDT?
    The TD350IDT is a high-side gate driver IC designed to drive N-channel Enhancement Mode GaN, IGBT, and power MOSFET devices.
  2. What package type does the TD350IDT come in?
    The TD350IDT comes in a 14-pin SOIC package.
  3. What is the input voltage range for the TD350IDT?
    The input voltage for the TD350IDT is 5V.
  4. What are the key protection functions of the TD350IDT?
    The TD350IDT includes advanced control and protection functions to ensure high reliability in power systems.
  5. What is the operating temperature range of the TD350IDT?
    The operating temperature range of the TD350IDT is from -40°C to 150°C.
  6. Is the TD350IDT compatible with GaN devices?
    Yes, the TD350IDT is compatible with N-channel Enhancement Mode GaN devices.
  7. What types of applications is the TD350IDT suited for?
    The TD350IDT is suited for high-power applications such as power supplies, motor drives, renewable energy systems, industrial automation, and electric vehicles.
  8. Where can I find detailed specifications for the TD350IDT?
    Detailed specifications can be found on official STMicroelectronics documentation, as well as on distributor websites like Mouser, Digi-Key, and Avnet.
  9. Does the TD350IDT support non-inverting output configuration?
    Yes, the TD350IDT supports a non-inverting high-side gate driver configuration.
  10. What is the significance of the compact SOIC package of the TD350IDT?
    The compact 14-pin SOIC package of the TD350IDT allows for space-efficient design in high-power applications.

Product Attributes

Driven Configuration:High-Side
Channel Type:Single
Number of Drivers:1
Gate Type:IGBT, N-Channel MOSFET
Voltage - Supply:12V ~ 26V
Logic Voltage - VIL, VIH:0.8V, 4.2V
Current - Peak Output (Source, Sink):1.5A, 2.3A
Input Type:Non-Inverting
High Side Voltage - Max (Bootstrap):- 
Rise / Fall Time (Typ):130ns, 75ns (Max)
Operating Temperature:-40°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:14-SOIC (0.154", 3.90mm Width)
Supplier Device Package:14-SO
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Same Series
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Similar Products

Part Number TD350IDT TD351IDT TD352IDT TD310IDT TD350ID
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Obsolete Active Active Active Obsolete
Driven Configuration High-Side High-Side High-Side Low-Side High-Side
Channel Type Single Single Single Independent Single
Number of Drivers 1 1 1 3 1
Gate Type IGBT, N-Channel MOSFET IGBT, N-Channel MOSFET IGBT, N-Channel MOSFET IGBT, N-Channel MOSFET IGBT, N-Channel MOSFET
Voltage - Supply 12V ~ 26V 12V ~ 26V 12V ~ 26V 4V ~ 16V 12V ~ 26V
Logic Voltage - VIL, VIH 0.8V, 4.2V 0.8V, 4.2V 0.8V, 4.2V 0.8V, 2V 0.8V, 4.2V
Current - Peak Output (Source, Sink) 1.5A, 2.3A 1.3A, 1.7A 1.3A, 1.7A - 1.5A, 2.3A
Input Type Non-Inverting Non-Inverting Non-Inverting Inverting, Non-Inverting Non-Inverting
High Side Voltage - Max (Bootstrap) - - - - -
Rise / Fall Time (Typ) 130ns, 75ns (Max) 100ns, 100ns (Max) 100ns, 100ns (Max) - 130ns, 75ns (Max)
Operating Temperature -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case 14-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 16-SOIC (0.154", 3.90mm Width) 14-SOIC (0.154", 3.90mm Width)
Supplier Device Package 14-SO 8-SOIC 8-SOIC 16-SO 14-SO

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