STTH3R02RL
  • Share:

STMicroelectronics STTH3R02RL

Manufacturer No:
STTH3R02RL
Manufacturer:
STMicroelectronics
Package:
Tape & Reel (TR)
Description:
DIODE GEN PURP 200V 3A DO201AD
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The STTH3R02RL is an ultrafast recovery diode produced by STMicroelectronics. This device utilizes ST's 200 V planar Pt doping technology, making it highly suitable for applications in switching mode base drive and transistor circuits. It is packaged in the DO-201AD format and is designed for use in low voltage, high frequency inverters, free wheeling, and polarity protection.

Key Specifications

Symbol Parameter Value Unit
VRRM Repetitive peak reverse voltage 200 V
IFRM Repetitive peak forward current 110 A (tp = 5 µs, F = 5 kHz)
IF(RMS) Forward rms current 70 A (DO-201AD / DO-15)
IF(AV) Average forward current 3 A (δ = 0.5, Tlead = 50 °C for DO-15)
IFSM Surge non repetitive forward current 75 A (tp = 10 ms Sinusoidal)
Tj Maximum operating junction temperature 175 °C
VF Forward voltage drop 0.7 V (typical at IF = 3 A, Tj = 25 °C)
trr Reverse recovery time 16 ns (typical at IF = 1 A, dIF/dt = -100 A/µs, VR = 30 V, Tj = 25 °C)

Key Features

  • Very low conduction losses
  • Negligible switching losses
  • Low forward and reverse recovery times
  • High junction temperature (up to 175 °C)
  • Available in DO-201AD, DO-15, and SMC packages
  • ECOPACK® compliant for environmental sustainability

Applications

  • Low voltage, high frequency inverters
  • Free wheeling diodes
  • Polarity protection circuits
  • Switching mode base drive and transistor circuits

Q & A

  1. What is the repetitive peak reverse voltage of the STTH3R02RL?

    The repetitive peak reverse voltage (VRRM) is 200 V.

  2. What is the average forward current rating for the DO-201AD package?

    The average forward current (IF(AV)) is 3 A for the DO-201AD package with Tlead = 90 °C.

  3. What is the typical forward voltage drop at 3 A and 25 °C?

    The typical forward voltage drop (VF) at IF = 3 A and Tj = 25 °C is 0.7 V.

  4. What is the reverse recovery time under typical conditions?

    The reverse recovery time (trr) is typically 16 ns at IF = 1 A, dIF/dt = -100 A/µs, VR = 30 V, and Tj = 25 °C.

  5. What are the package options available for the STTH3R02?

    The device is available in DO-201AD, DO-15, and SMC packages.

  6. What is the maximum operating junction temperature?

    The maximum operating junction temperature (Tj) is 175 °C.

  7. What is the surge non-repetitive forward current rating?

    The surge non-repetitive forward current (IFSM) is 75 A for a pulse duration of 10 ms sinusoidal.

  8. Is the STTH3R02RL environmentally compliant?

    Yes, the STTH3R02RL is available in ECOPACK® compliant packages, meeting environmental sustainability standards.

  9. What are the typical applications of the STTH3R02RL?

    Typical applications include low voltage, high frequency inverters, free wheeling diodes, polarity protection circuits, and switching mode base drive and transistor circuits.

  10. How is the thermal resistance of the DO-201AD package characterized?

    The thermal resistance (Rth(j-l)) for the DO-201AD package is 30 °C/W with a lead length of 10 mm on an infinite heatsink.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):200 V
Current - Average Rectified (Io):3A
Voltage - Forward (Vf) (Max) @ If:1 V @ 3 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):30 ns
Current - Reverse Leakage @ Vr:3 µA @ 200 V
Capacitance @ Vr, F:- 
Mounting Type:Through Hole
Package / Case:DO-201AD, Axial
Supplier Device Package:DO-201AD
Operating Temperature - Junction:175°C (Max)
0 Remaining View Similar

In Stock

$0.61
1,509

Please send RFQ , we will respond immediately.

Same Series
STTH3R02QRL
STTH3R02QRL
DIODE GEN PURP 200V 3A DO15
STTH3R02S
STTH3R02S
DIODE GEN PURP 200V 3A SMC
STTH3R02RL
STTH3R02RL
DIODE GEN PURP 200V 3A DO201AD

Similar Products

Part Number STTH3R02RL STTH3R04RL STTH3R06RL STTH4R02RL STTH302RL STTH3R02QRL
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Active Active Obsolete Active Active
Diode Type Standard Standard Standard Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 200 V 400 V 600 V 200 V 200 V 200 V
Current - Average Rectified (Io) 3A 3A 3A 4A 3A 3A
Voltage - Forward (Vf) (Max) @ If 1 V @ 3 A 1.5 V @ 3 A 1.7 V @ 3 A 1.25 V @ 12 A 950 mV @ 3 A 1 V @ 3 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 30 ns 35 ns 35 ns 30 ns 35 ns 30 ns
Current - Reverse Leakage @ Vr 3 µA @ 200 V 5 µA @ 400 V 3 µA @ 600 V 3 µA @ 200 V 3 µA @ 200 V 3 µA @ 200 V
Capacitance @ Vr, F - - - - - -
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole
Package / Case DO-201AD, Axial DO-201AD, Axial DO-201AD, Axial DO-201AB, DO-32, Axial DO-201AD, Axial DO-204AC, DO-15, Axial
Supplier Device Package DO-201AD DO-201AD DO-201AD DO-201AB DO-201AD DO-15
Operating Temperature - Junction 175°C (Max) 175°C (Max) 175°C (Max) 175°C (Max) 175°C (Max) 175°C (Max)

Related Product By Categories

MBRM120LT3G
MBRM120LT3G
onsemi
DIODE SCHOTTKY 20V 1A POWERMITE
BAS21Q-13-F
BAS21Q-13-F
Diodes Incorporated
HIVOLT SWITCHING DIODE BVR > 100
BAV21WS-AQ
BAV21WS-AQ
Diotec Semiconductor
DIODE SOD-323 250V 0.2A 50NS
MURA160T3G
MURA160T3G
onsemi
DIODE GEN PURP 600V 1A SMA
SMMDL6050T1G
SMMDL6050T1G
onsemi
DIODE GEN PURP 70V 200MA SOD323
STPSC8H065DI
STPSC8H065DI
STMicroelectronics
DIODE SCHOTTKY 650V 8A TO220AC
MUR160A
MUR160A
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 1A DO204AL
PMEG4020EP-QX
PMEG4020EP-QX
Nexperia USA Inc.
SCHOTTKYS IN CFP PACKAGES
BAT720-F2-0000HF
BAT720-F2-0000HF
Yangzhou Yangjie Electronic Technology Co.,Ltd
DIODE SCHOTTKY 40V 500MA SOT23
1N4148,133
1N4148,133
NXP USA Inc.
DIODE GEN PURP 100V 200MA ALF2
STTH8R06G
STTH8R06G
STMicroelectronics
DIODE GEN PURP 600V 8A D2PAK
SURA8120T3G
SURA8120T3G
onsemi
DIODE GEN PURP 200V 2A SMA

Related Product By Brand

STPS40M80CT
STPS40M80CT
STMicroelectronics
DIODE ARRAY SCHOTTKY 80V TO220AB
STTH30AC06FP
STTH30AC06FP
STMicroelectronics
DIODE GEN PURP 600V 30A TO220
STF14NM50N
STF14NM50N
STMicroelectronics
MOSFET N-CH 500V 12A TO220FP
STD14NM50N
STD14NM50N
STMicroelectronics
MOSFET N-CH 500V 12A DPAK
TDA7439DS13TR
TDA7439DS13TR
STMicroelectronics
IC AUDIO TONE PROCESSOR 28SO
STM32F078VBH6
STM32F078VBH6
STMicroelectronics
IC MCU 32BIT 128KB FLSH 100UFBGA
STM32F101ZDT6
STM32F101ZDT6
STMicroelectronics
IC MCU 32BIT 384KB FLASH 144LQFP
STR912FAW46X6T
STR912FAW46X6T
STMicroelectronics
IC MCU 32BIT 1MB FLASH 128LQFP
SPC58EC70E1F0C0X
SPC58EC70E1F0C0X
STMicroelectronics
IC MCU 32BIT 2MB FLASH 64ETQFP
L9680
L9680
STMicroelectronics
IC INTERFACE SPECIALIZED 100TQFP
TL084IDT
TL084IDT
STMicroelectronics
IC OPAMP JFET 4 CIRCUIT 14SO
VN5E025AJ-E
VN5E025AJ-E
STMicroelectronics
IC PWR SWTCH N-CHAN 1:1 PWRSSO12