STTH1L06A
  • Share:

STMicroelectronics STTH1L06A

Manufacturer No:
STTH1L06A
Manufacturer:
STMicroelectronics
Package:
Tape & Reel (TR)
Description:
DIODE GEN PURP 600V 1A SMA
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The STTH1L06A, produced by STMicroelectronics, is a high-performance diode utilizing ST Turbo 2 600 V technology. This device is specifically designed for use as a boost diode in discontinuous or critical mode power factor corrections. It is also suitable for applications as a free-wheeling diode in power supplies and other power switching applications.

Key Specifications

Parameter Value Unit
VRRM (Repetitive Peak Reverse Voltage) 600 V
IF(AV) (Average Forward Current) 1 A (Tc = 135 °C for SMA package) A
IFSM (Surge Non-Repetitive Forward Current) 20 A (tp = 10 ms sinusoidal for SMA package) A
IR (Reverse Leakage Current) 75 µA (Tj = 150 °C, VR = 600 V) µA
VF (Forward Voltage Drop) 1.05 V (Tj = 150 °C, IF = 1 A) V
trr (Reverse Recovery Time) 80 ns (Tj = 25 °C, IF = 1 A, dIF/dt = -50 A/µs, VR = 30 V) ns
Tj (Maximum Operating Junction Temperature) 175 °C °C
Rth(j-l) (Junction to Lead Thermal Resistance) 30 °C/W (SMA package) °C/W
Rth(j-a) (Junction to Ambient Thermal Resistance) 70 °C/W (SMA package, L = 10 mm) °C/W

Key Features

  • Ultrafast switching
  • Reduces switching and conduction losses
  • Low reverse recovery current
  • Low thermal resistance

Applications

  • Boost diode in discontinuous or critical mode power factor corrections
  • Free-wheeling diode in power supplies
  • Other power switching applications

Q & A

  1. What is the maximum repetitive peak reverse voltage of the STTH1L06A?

    The maximum repetitive peak reverse voltage (VRRM) is 600 V.

  2. What is the average forward current rating for the STTH1L06A?

    The average forward current (IF(AV)) is 1 A at a case temperature (Tc) of 135 °C for the SMA package.

  3. What is the maximum junction temperature for the STTH1L06A?

    The maximum operating junction temperature (Tj) is 175 °C.

  4. What are the typical applications of the STTH1L06A?

    The STTH1L06A is typically used as a boost diode in discontinuous or critical mode power factor corrections and as a free-wheeling diode in power supplies and other power switching applications.

  5. What is the reverse recovery time of the STTH1L06A?

    The reverse recovery time (trr) is 80 ns at Tj = 25 °C, IF = 1 A, dIF/dt = -50 A/µs, and VR = 30 V.

  6. What is the thermal resistance from junction to ambient for the STTH1L06A?

    The thermal resistance from junction to ambient (Rth(j-a)) is 70 °C/W for the SMA package with a lead length of 10 mm.

  7. Is the STTH1L06A RoHS compliant?
  8. What are the package options available for the STTH1L06A?

    The STTH1L06A is available in the SMA package.

  9. How does the STTH1L06A reduce losses in power applications?

    The STTH1L06A reduces switching and conduction losses due to its ultrafast switching and low reverse recovery current characteristics.

  10. What is the storage temperature range for the STTH1L06A?

    The storage temperature range is -65 to +175 °C.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):600 V
Current - Average Rectified (Io):1A
Voltage - Forward (Vf) (Max) @ If:1.3 V @ 1 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):80 ns
Current - Reverse Leakage @ Vr:1 µA @ 600 V
Capacitance @ Vr, F:- 
Mounting Type:Surface Mount
Package / Case:DO-214AC, SMA
Supplier Device Package:SMA
Operating Temperature - Junction:175°C (Max)
0 Remaining View Similar

In Stock

$0.47
1,115

Please send RFQ , we will respond immediately.

Same Series
STTH1L06
STTH1L06
DIODE GEN PURP 600V 1A DO41
STTH1L06A
STTH1L06A
DIODE GEN PURP 600V 1A SMA
STTH1L06U
STTH1L06U
DIODE GEN PURP 600V 1A SMB

Similar Products

Part Number STTH1L06A STTH1R06A STTH1L06U STTH2L06A STTH1L06
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Active Active Active Active
Diode Type Standard Standard Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 600 V 600 V 600 V 600 V 600 V
Current - Average Rectified (Io) 1A 1A 1A 2A 1A
Voltage - Forward (Vf) (Max) @ If 1.3 V @ 1 A 1.7 V @ 1 A 1.3 V @ 1 A 1.3 V @ 2 A 1.3 V @ 1 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 80 ns 45 ns 80 ns 85 ns 80 ns
Current - Reverse Leakage @ Vr 1 µA @ 600 V 1 µA @ 600 V 1 µA @ 600 V 2 µA @ 600 V 1 µA @ 600 V
Capacitance @ Vr, F - - - - -
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Through Hole
Package / Case DO-214AC, SMA DO-214AC, SMA DO-214AA, SMB DO-214AC, SMA DO-204AL, DO-41, Axial
Supplier Device Package SMA SMA SMB SMA DO-41
Operating Temperature - Junction 175°C (Max) 175°C (Max) 175°C (Max) 175°C (Max) 175°C (Max)

Related Product By Categories

BAS20-E3-18
BAS20-E3-18
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 150V 200MA SOT23
STTH1R02RL
STTH1R02RL
STMicroelectronics
DIODE GEN PURP 200V 1.5A DO41
B360A-13-F
B360A-13-F
Diodes Incorporated
DIODE SCHOTTKY 60V 3A SMA
PMEG6010ELRX
PMEG6010ELRX
Nexperia USA Inc.
DIODE SCHOTTKY 60V 1A CFP3
STTH1R06A
STTH1R06A
STMicroelectronics
DIODE GEN PURP 600V 1A SMA
MURS140T3G
MURS140T3G
onsemi
DIODE GEN PURP 400V 1A SMB
STPS5L60SY
STPS5L60SY
STMicroelectronics
DIODE SCHOTTKY 60V 5A SMC
STTH15RQ06DY
STTH15RQ06DY
STMicroelectronics
DIODE GEN PURP 600V 15A TO220AC
BAS21E6433HTMA1
BAS21E6433HTMA1
Infineon Technologies
DIODE GEN PURP 200V 250MA SOT23
MUR240
MUR240
onsemi
DIODE GEN PURP 400V 2A AXIAL
STTH3R02Q
STTH3R02Q
STMicroelectronics
DIODE GEN PURP 200V 3A DO15
MURS120HE3/52T
MURS120HE3/52T
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 200V 2A DO214AA

Related Product By Brand

STGIPQ3H60T-HZS
STGIPQ3H60T-HZS
STMicroelectronics
PWR MODULE 600V 3A 26DIP
SD2931-10W
SD2931-10W
STMicroelectronics
IC TRANS RF HF/VHF/UHF M174
STP80NF03L-04
STP80NF03L-04
STMicroelectronics
MOSFET N-CH 30V 80A TO220AB
STM32L451RET6
STM32L451RET6
STMicroelectronics
IC MCU 32BIT 512KB FLASH 64LQFP
STM32F072RBH6
STM32F072RBH6
STMicroelectronics
IC MCU 32BIT 128KB FLASH 64UFBGA
STM32G474MET6
STM32G474MET6
STMicroelectronics
IC MCU 32BIT 512KB FLASH 80LQFP
L9680
L9680
STMicroelectronics
IC INTERFACE SPECIALIZED 100TQFP
TDA7498LTR
TDA7498LTR
STMicroelectronics
IC AMP D STEREO 80W POWERSSO36
VN750PSTR-E
VN750PSTR-E
STMicroelectronics
IC PWR DRIVER N-CHANNEL 1:1 8SO
VNQ6040S-E
VNQ6040S-E
STMicroelectronics
IC PWR DRVR N-CHAN 1:1 PWRSSO36
L4995KTR
L4995KTR
STMicroelectronics
IC REG LIN 5V 500MA POWERSSO-24
L78M05CDT
L78M05CDT
STMicroelectronics
IC REG LINEAR 5V 500MA DPAK