STPSC2H12B2Y-TR
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STMicroelectronics STPSC2H12B2Y-TR

Manufacturer No:
STPSC2H12B2Y-TR
Manufacturer:
STMicroelectronics
Package:
Tape & Reel (TR)
Description:
AUTOMOTIVE 1200 V, 2 A HIGH SURG
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The STPSC2H12-Y is an ultra-high performance power Schottky diode manufactured by STMicroelectronics using a silicon carbide substrate. This diode features a wide band gap material, enabling a 1200 V rating. The Schottky construction ensures no recovery at turn-off and negligible ringing patterns, with minimal capacitive turn-off behavior that is independent of temperature. This makes it particularly suitable for enhancing the performance of controlled switches in various applications.

Key Specifications

Parameter Value Unit
VRRM (Repetitive peak reverse voltage) 1200 V
IF(AV) (Average forward current) 2 A (Tc = 160 °C, DC) A
IFRM (Repetitive peak forward current) 9 A (Tc = 160 °C, Tj = 175 °C, δ = 0.1, fw > 10 kHz) A
IFSM (Surge non-repetitive forward current) 15 A (tp = 10 ms sinusoidal, Tc = 25 °C) A
Tstg (Storage temperature range) -65 to +175 °C
Tj (Operating junction temperature range) -40 to +175 °C
VF (Forward voltage drop) 1.35 V (Tj = 25 °C, IF = 2 A) V
Rth(j-c) (Junction to case thermal resistance) 1.9 to 2.7 °C/W
CdA-K (Minimum creepage distance between A and K) 3 mm mm

Key Features

  • AEC-Q101 qualified
  • PPAP capable
  • No or negligible reverse recovery
  • High forward surge capability
  • Operating Tj from -40 °C to 175 °C
  • Creepage distance of 3 mm as per IEC 60664-1
  • ECOPACK2 compliant component

Applications

  • Bootstrap function of SiC MOS-FETs
  • Snubber diode
  • Switching diode
  • Clamping functions of SiC MOS-FETs

Q & A

  1. What is the repetitive peak reverse voltage (VRRM) of the STPSC2H12-Y diode?

    The VRRM of the STPSC2H12-Y diode is 1200 V.

  2. What is the average forward current (IF(AV)) of the STPSC2H12-Y diode?

    The average forward current (IF(AV)) is 2 A at Tc = 160 °C, DC.

  3. What is the operating junction temperature range (Tj) of the STPSC2H12-Y diode?

    The operating junction temperature range (Tj) is from -40 °C to 175 °C.

  4. What is the forward voltage drop (VF) of the STPSC2H12-Y diode at 25 °C and IF = 2 A?

    The forward voltage drop (VF) is 1.35 V at Tj = 25 °C and IF = 2 A.

  5. Is the STPSC2H12-Y diode AEC-Q101 qualified?
  6. What is the minimum creepage distance between the anode and cathode of the STPSC2H12-Y diode?

    The minimum creepage distance is 3 mm as per IEC 60664-1.

  7. What are the typical applications of the STPSC2H12-Y diode?

    The typical applications include bootstrap function of SiC MOS-FETs, snubber diode, switching diode, and clamping functions of SiC MOS-FETs.

  8. Is the STPSC2H12-Y diode ECOPACK2 compliant?
  9. What is the surge non-repetitive forward current (IFSM) of the STPSC2H12-Y diode?

    The surge non-repetitive forward current (IFSM) is 15 A for tp = 10 ms sinusoidal at Tc = 25 °C.

  10. What is the junction to case thermal resistance (Rth(j-c)) of the STPSC2H12-Y diode?

    The junction to case thermal resistance (Rth(j-c)) is between 1.9 and 2.7 °C/W.

Product Attributes

Diode Type:Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max):1200 V
Current - Average Rectified (Io):5A
Voltage - Forward (Vf) (Max) @ If:1.5 V @ 2 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):- 
Current - Reverse Leakage @ Vr:12 µA @ 1200 V
Capacitance @ Vr, F:190pF @ 0V, 1MHz
Mounting Type:Surface Mount
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package:DPAK
Operating Temperature - Junction:-40°C ~ 175°C
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In Stock

$2.13
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