Overview
The STPSC2H12-Y is an ultra-high performance power Schottky diode manufactured by STMicroelectronics using a silicon carbide substrate. This diode features a wide band gap material, enabling a 1200 V rating. The Schottky construction ensures no recovery at turn-off and negligible ringing patterns, with minimal capacitive turn-off behavior that is independent of temperature. This makes it particularly suitable for enhancing the performance of controlled switches in various applications.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| VRRM (Repetitive peak reverse voltage) | 1200 | V |
| IF(AV) (Average forward current) | 2 A (Tc = 160 °C, DC) | A |
| IFRM (Repetitive peak forward current) | 9 A (Tc = 160 °C, Tj = 175 °C, δ = 0.1, fw > 10 kHz) | A |
| IFSM (Surge non-repetitive forward current) | 15 A (tp = 10 ms sinusoidal, Tc = 25 °C) | A |
| Tstg (Storage temperature range) | -65 to +175 | °C |
| Tj (Operating junction temperature range) | -40 to +175 | °C |
| VF (Forward voltage drop) | 1.35 V (Tj = 25 °C, IF = 2 A) | V |
| Rth(j-c) (Junction to case thermal resistance) | 1.9 to 2.7 | °C/W |
| CdA-K (Minimum creepage distance between A and K) | 3 mm | mm |
Key Features
- AEC-Q101 qualified
- PPAP capable
- No or negligible reverse recovery
- High forward surge capability
- Operating Tj from -40 °C to 175 °C
- Creepage distance of 3 mm as per IEC 60664-1
- ECOPACK2 compliant component
Applications
- Bootstrap function of SiC MOS-FETs
- Snubber diode
- Switching diode
- Clamping functions of SiC MOS-FETs
Q & A
- What is the repetitive peak reverse voltage (VRRM) of the STPSC2H12-Y diode?
The VRRM of the STPSC2H12-Y diode is 1200 V.
- What is the average forward current (IF(AV)) of the STPSC2H12-Y diode?
The average forward current (IF(AV)) is 2 A at Tc = 160 °C, DC.
- What is the operating junction temperature range (Tj) of the STPSC2H12-Y diode?
The operating junction temperature range (Tj) is from -40 °C to 175 °C.
- What is the forward voltage drop (VF) of the STPSC2H12-Y diode at 25 °C and IF = 2 A?
The forward voltage drop (VF) is 1.35 V at Tj = 25 °C and IF = 2 A.
- Is the STPSC2H12-Y diode AEC-Q101 qualified?
- What is the minimum creepage distance between the anode and cathode of the STPSC2H12-Y diode?
The minimum creepage distance is 3 mm as per IEC 60664-1.
- What are the typical applications of the STPSC2H12-Y diode?
The typical applications include bootstrap function of SiC MOS-FETs, snubber diode, switching diode, and clamping functions of SiC MOS-FETs.
- Is the STPSC2H12-Y diode ECOPACK2 compliant?
- What is the surge non-repetitive forward current (IFSM) of the STPSC2H12-Y diode?
The surge non-repetitive forward current (IFSM) is 15 A for tp = 10 ms sinusoidal at Tc = 25 °C.
- What is the junction to case thermal resistance (Rth(j-c)) of the STPSC2H12-Y diode?
The junction to case thermal resistance (Rth(j-c)) is between 1.9 and 2.7 °C/W.
