Overview
The M24C64-RMB6TG is a 64-Kbit I2C-compatible EEPROM (Electrically Erasable Programmable Memory) produced by STMicroelectronics. This memory device is organized as 8K × 8 bits, providing a total of 64 Kbits (8 Kbytes) of non-volatile memory. It operates over a wide ambient temperature range of -40 °C to +85 °C and supports a single supply voltage from 1.8 V to 5.5 V, making it versatile for various applications.
Key Specifications
| Specification | Value |
|---|---|
| Memory Size | 64 Kbit (8 Kbyte) |
| Memory Organization | 8 K x 8 |
| Page Size | 32 bytes |
| Supply Voltage | 1.8 V to 5.5 V |
| Operating Temperature | -40 °C to +85 °C |
| Write Cycle Time | Byte write within 5 ms, Page write within 5 ms |
| Read Modes | Random and sequential read modes |
| Write Protect | Write protect of the whole memory array |
| ESD/Latch-Up Protection | Enhanced ESD/latch-Up protection |
| Write Cycles | More than 4 million write cycles |
| Data Retention | More than 200 years |
| Clock Frequency | Up to 1 MHz |
| Interface Type | I2C |
| Package/Case | UFDFPN, SO8N, TSSOP8, WLCSP, Unsawn wafer |
| Mounting Style | SMD/SMT |
Key Features
- Compatible with all I2C bus modes: 1 MHz, 400 kHz, and 100 kHz.
- 64 Kbit (8 Kbyte) of EEPROM memory.
- Additional write lockable page (for M24C64-D order codes).
- Single supply voltage: 1.8 V to 5.5 V over -40 °C to +85 °C.
- Byte and page write within 5 ms.
- Random and sequential read modes.
- Write protect of the whole memory array.
- Enhanced ESD/latch-Up protection.
- More than 4 million write cycles and more than 200 years of data retention.
- Available in various packages: SO8N, TSSOP8, UFDFPN, WLCSP, and unsawn wafer.
Applications
The M24C64-RMB6TG is optimized for a wide range of industrial and consumer applications, including but not limited to:
- Industrial automation and control systems.
- Consumer electronics requiring non-volatile memory.
- Automotive systems where robust and reliable memory is essential.
- Medical devices that need secure and long-lasting data storage.
- IoT devices that require low-power and reliable memory solutions.
Q & A
- What is the memory organization of the M24C64-RMB6TG?
The M24C64-RMB6TG is organized as 8 K x 8 bits, providing a total of 64 Kbits (8 Kbytes) of EEPROM memory.
- What are the supported I2C bus modes?
The device is compatible with 1 MHz, 400 kHz, and 100 kHz I2C bus modes.
- What is the operating temperature range of the M24C64-RMB6TG?
The device operates over an ambient temperature range of -40 °C to +85 °C.
- What is the supply voltage range for the M24C64-RMB6TG?
The supply voltage range is from 1.8 V to 5.5 V.
- How long does it take to write a byte or a page?
Both byte and page writes are completed within 5 ms.
- What kind of protection does the M24C64-RMB6TG offer?
The device offers write protect for the whole memory array and enhanced ESD/latch-Up protection.
- How many write cycles can the M24C64-RMB6TG endure?
The device can endure more than 4 million write cycles.
- What is the data retention period of the M24C64-RMB6TG?
The data retention period is more than 200 years.
- In what packages is the M24C64-RMB6TG available?
The device is available in SO8N, TSSOP8, UFDFPN, WLCSP, and unsawn wafer packages.
- Is the M24C64-RMB6TG suitable for low-power applications?
Yes, the device is optimized for low-power applications.
- Does the M24C64-RMB6TG support random and sequential read modes?
Yes, it supports both random and sequential read modes.
