L6491DTR
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STMicroelectronics L6491DTR

Manufacturer No:
L6491DTR
Manufacturer:
STMicroelectronics
Package:
Tape & Reel (TR)
Description:
IC GATE DRVR HALF-BRIDGE 14SO
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The L6491DTR, produced by STMicroelectronics, is a high-voltage, single-chip half-bridge gate driver designed for N-channel power MOSFETs or IGBTs. It is manufactured using the BCD6 “OFF-LINE” technology, enabling it to handle high voltage rails up to 600 V. The device features CMOS/TTL compatible logic inputs down to 3.3 V, making it easy to interface with microcontrollers or DSPs. An integrated comparator provides fast protection against over-current, over-temperature, and other fault conditions.

Key Specifications

Parameter Value Unit
High-side voltage rail Up to 600 V V
dV/dt immunity ± 50 V/ns V/ns
Driver current capability 4 A source/sink A
Switching times 15 ns rise/fall with 1 nF load ns
Logic input voltage 3.3 V, 5 V TTL/CMOS V
Package SO-14
Operating temperature range -40 to 125 °C °C
Thermal resistance junction to ambient 120 °C/W °C/W

Key Features

  • High voltage rail up to 600 V
  • dV/dt immunity ± 50 V/ns in full temperature range
  • Driver current capability: 4 A source/sink
  • Switching times 15 ns rise/fall with 1 nF load
  • 3.3 V, 5 V TTL/CMOS inputs with hysteresis
  • Integrated bootstrap diode
  • Comparator for fault protections
  • Smart shutdown function
  • Adjustable deadtime
  • Interlocking function
  • Compact and simplified layout
  • Bill of material reduction
  • Effective fault protection
  • Flexible, easy, and fast design

Applications

  • Motor drivers for home appliances, factory automation, industrial drives, and fans
  • HID ballasts
  • Power supply units
  • Induction heating
  • Wireless chargers
  • Industrial inverters
  • UPS (Uninterruptible Power Supplies)

Q & A

  1. What is the maximum high-side voltage rail for the L6491DTR?

    The maximum high-side voltage rail for the L6491DTR is up to 600 V.

  2. What is the dV/dt immunity of the L6491DTR?

    The dV/dt immunity of the L6491DTR is ± 50 V/ns in the full temperature range.

  3. What is the driver current capability of the L6491DTR?

    The driver current capability of the L6491DTR is 4 A source/sink.

  4. What are the switching times for the L6491DTR with a 1 nF load?

    The switching times for the L6491DTR with a 1 nF load are 15 ns rise/fall.

  5. What are the compatible logic input voltages for the L6491DTR?

    The L6491DTR has 3.3 V, 5 V TTL/CMOS compatible logic inputs.

  6. Does the L6491DTR have an integrated bootstrap diode?
  7. What protection features does the L6491DTR offer?

    The L6491DTR offers a comparator for fault protections, smart shutdown function, and effective fault protection mechanisms.

  8. Can the deadtime be adjusted on the L6491DTR?
  9. What is the operating temperature range for the L6491DTR?

    The operating temperature range for the L6491DTR is -40 to 125 °C.

  10. What are some common applications of the L6491DTR?

    The L6491DTR is commonly used in motor drivers, HID ballasts, power supply units, induction heating, wireless chargers, industrial inverters, and UPS systems.

Product Attributes

Driven Configuration:Half-Bridge
Channel Type:Independent
Number of Drivers:- 
Gate Type:IGBT, N-Channel MOSFET
Voltage - Supply:10V ~ 20V
Logic Voltage - VIL, VIH:1.45V, 2V
Current - Peak Output (Source, Sink):4A, 4A
Input Type:Non-Inverting
High Side Voltage - Max (Bootstrap):600 V
Rise / Fall Time (Typ):15ns, 15ns
Operating Temperature:-40°C ~ 125°C (TJ)
Mounting Type:Surface Mount
Package / Case:14-SOIC (0.154", 3.90mm Width)
Supplier Device Package:14-SO
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In Stock

$2.64
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Same Series
L6491D
L6491D
IC GATE DRVR HALF-BRIDGE 14SO

Similar Products

Part Number L6491DTR L6498DTR L6391DTR
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Active Active
Driven Configuration Half-Bridge High-Side or Low-Side Half-Bridge
Channel Type Independent Independent Independent
Number of Drivers - 2 2
Gate Type IGBT, N-Channel MOSFET IGBT, N-Channel MOSFET IGBT, N-Channel MOSFET
Voltage - Supply 10V ~ 20V 10V ~ 20V 12.5V ~ 20V
Logic Voltage - VIL, VIH 1.45V, 2V 1.45V, 2V 1.1V, 1.9V
Current - Peak Output (Source, Sink) 4A, 4A 2A, 2.5A 290mA, 430mA
Input Type Non-Inverting CMOS/TTL Non-Inverting
High Side Voltage - Max (Bootstrap) 600 V 500 V 600 V
Rise / Fall Time (Typ) 15ns, 15ns 25ns, 25ns 75ns, 35ns
Operating Temperature -40°C ~ 125°C (TJ) -40°C ~ 125°C (TJ) -40°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Package / Case 14-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 14-SOIC (0.154", 3.90mm Width)
Supplier Device Package 14-SO 8-SOIC 14-SO

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