L6392D
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STMicroelectronics L6392D

Manufacturer No:
L6392D
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
IC GATE DRVR HALF-BRIDGE 14SO
Delivery:
Payment:
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iso9001
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Product Introduction

Overview

The L6392D, produced by STMicroelectronics, is a high voltage device manufactured using the BCD™ “offline” technology. It is designed as a single chip half bridge gate driver for N-channel power MOSFETs or IGBTs. The device features a high-side (floating) section capable of handling voltage rails up to 600 V, making it suitable for various high-voltage applications. The logic inputs are CMOS/TTL compatible down to 3.3 V, facilitating easy interfacing with microcontrollers or DSPs. The IC also includes an operational amplifier for advanced current sensing, particularly useful in field-oriented motor control applications.

Key Specifications

Parameter Value Unit
High-side Voltage - Max (Bootstrap) 600 V
Driver Current Capability - Source 290 mA
Driver Current Capability - Sink 430 mA
Rise / Fall Time (Typ) 75 / 35 nsec
Logic Voltage - VIL, VIH 1.1, 1.9 V
Supply Voltage 12.5 ~ 20 V
Operating Temperature -40 ~ 125 °C (TJ)
Package 14-SOIC (0.154", 3.90mm Width)
Mounting Type Surface Mount

Key Features

  • High voltage rail up to 600 V
  • dV/dt immunity ± 50 V/nsec in full temperature range
  • Driver current capability: 290 mA source, 430 mA sink
  • Switching times: 75/35 nsec rise/fall with 1 nF load
  • 3.3 V, 5 V TTL/CMOS inputs with hysteresis
  • Integrated bootstrap diode
  • Operational amplifier for advanced current sensing
  • Adjustable deadtime
  • Interlocking function
  • Compact and simplified layout
  • Bill of material reduction
  • Flexible, easy, and fast design

Applications

  • Motor drivers for home appliances, factory automation, and industrial drives
  • HID ballasts
  • Power supply units

Q & A

  1. What is the maximum high-side voltage the L6392D can handle?

    The L6392D can handle a high-side voltage up to 600 V.

  2. What are the driver current capabilities of the L6392D?

    The L6392D has a driver current capability of 290 mA source and 430 mA sink.

  3. What are the typical rise and fall times of the L6392D with a 1 nF load?

    The typical rise and fall times are 75 nsec and 35 nsec, respectively.

  4. Is the L6392D compatible with 3.3 V and 5 V TTL/CMOS inputs?
  5. Does the L6392D include an integrated bootstrap diode?
  6. What is the purpose of the operational amplifier in the L6392D?

    The operational amplifier is suitable for advanced current sensing, particularly in field-oriented motor control applications.

  7. Can the deadtime of the L6392D be adjusted?
  8. What is the operating temperature range of the L6392D?

    The operating temperature range is -40°C to 125°C (TJ).

  9. What package type is the L6392D available in?

    The L6392D is available in a 14-SOIC package.

  10. What are some common applications of the L6392D?

Product Attributes

Driven Configuration:Half-Bridge
Channel Type:Independent
Number of Drivers:2
Gate Type:IGBT, N-Channel MOSFET
Voltage - Supply:12.5V ~ 20V
Logic Voltage - VIL, VIH:1.1V, 1.9V
Current - Peak Output (Source, Sink):290mA, 430mA
Input Type:Non-Inverting
High Side Voltage - Max (Bootstrap):600 V
Rise / Fall Time (Typ):75ns, 35ns
Operating Temperature:-40°C ~ 125°C (TJ)
Mounting Type:Surface Mount
Package / Case:14-SOIC (0.154", 3.90mm Width)
Supplier Device Package:14-SO
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Same Series
L6392D
L6392D
IC GATE DRVR HALF-BRIDGE 14SO

Similar Products

Part Number L6392D L6398D L6395D L6399D L6393D L6390D L6391D
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Active Active Active Active Active Active
Driven Configuration Half-Bridge Half-Bridge Half-Bridge Half-Bridge Half-Bridge Half-Bridge Half-Bridge
Channel Type Independent Independent Independent Independent Synchronous Independent Independent
Number of Drivers 2 2 2 2 2 2 2
Gate Type IGBT, N-Channel MOSFET IGBT, N-Channel MOSFET IGBT, N-Channel MOSFET IGBT, N-Channel MOSFET IGBT, N-Channel MOSFET IGBT, N-Channel MOSFET IGBT, N-Channel MOSFET
Voltage - Supply 12.5V ~ 20V 10V ~ 20V 10V ~ 20V 10V ~ 20V 10V ~ 20V 12.5V ~ 20V 12.5V ~ 20V
Logic Voltage - VIL, VIH 1.1V, 1.9V 1.1V, 1.9V 1.1V, 1.9V 1.1V, 1.9V 1.1V, 1.9V 1.1V, 1.9V 1.1V, 1.9V
Current - Peak Output (Source, Sink) 290mA, 430mA 290mA, 430mA 290mA, 430mA 290mA, 430mA 290mA, 430mA 290mA, 430mA 290mA, 430mA
Input Type Non-Inverting Inverting, Non-Inverting Non-Inverting Inverting, Non-Inverting Non-Inverting Non-Inverting Non-Inverting
High Side Voltage - Max (Bootstrap) 600 V 600 V 600 V 600 V 600 V 600 V 600 V
Rise / Fall Time (Typ) 75ns, 35ns 75ns, 35ns 75ns, 35ns 75ns, 35ns 75ns, 35ns 75ns, 35ns 75ns, 35ns
Operating Temperature -40°C ~ 125°C (TJ) -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ) -40°C ~ 125°C (TJ) -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case 14-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 14-SOIC (0.154", 3.90mm Width) 16-SOIC (0.154", 3.90mm Width) 14-SOIC (0.154", 3.90mm Width)
Supplier Device Package 14-SO 8-SOIC 8-SOIC 8-SOIC 14-SO 16-SO 14-SO

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