Overview
The 2STR1160 is a low voltage fast-switching NPN power transistor manufactured by STMicroelectronics. This transistor is produced using the advanced 'PB-HCD' (Power Bipolar High Current Density) technology, which enables exceptional high gain performances and very low saturation voltage. The device is packaged in a miniature SOT-23 plastic package, suitable for surface mounting circuits. Although the product is no longer in production, it remains relevant for existing designs and applications.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Collector-base voltage (VCBO) | 60 | V |
| Collector-emitter voltage (VCEO) | 60 | V |
| Emitter-base voltage (VEBO) | 5 | V |
| Collector current (IC) | 1 | A |
| Collector peak current (ICM) | 2 | A (tP < 5ms) |
| Total dissipation at Tamb = 25°C (Ptot) | 0.5 | W |
| Storage temperature (Tstg) | -65 to 150 | °C |
| Max. operating junction temperature (TJ) | 150 | °C |
| Thermal resistance junction-amb (Rthj-amb) | 250 | °C/W |
| Collector-emitter saturation voltage (VCE(sat)) | 130 - 430 | mV (IC = 0.5 A to 1 A, IB = 50 mA to 100 mA) |
| Base-emitter saturation voltage (VBE(sat)) | 0.9 - 1.25 | V (IC = 1 A, IB = 100 mA) |
| DC current gain (hFE) | 85 - 560 | (IC = 0.5 A to 2 A, VCE = 2V) |
| Turn-on time (ton) | 220 | ns |
| Turn-off time (toff) | 500 | ns |
Key Features
- Very low collector-emitter saturation voltage
- High current gain characteristic
- Fast switching speed
- Miniature SOT-23 plastic package for surface mounting circuits
- Manufactured using 'PB-HCD' (Power Bipolar High Current Density) technology
- Complementary PNP transistor: 2STR2160
Applications
- LED drivers
- Battery chargers
- Motor and relay drivers
- Voltage regulation
Q & A
- What is the 2STR1160 transistor?
The 2STR1160 is a low voltage fast-switching NPN power transistor manufactured by STMicroelectronics.
- What is the maximum collector current of the 2STR1160?
The maximum collector current (IC) is 1 A, with a peak current (ICM) of 2 A for pulses less than 5 ms.
- What is the collector-emitter saturation voltage of the 2STR1160?
The collector-emitter saturation voltage (VCE(sat)) ranges from 130 mV to 430 mV, depending on the collector and base currents.
- What are the typical applications of the 2STR1160?
Typical applications include LED drivers, battery chargers, motor and relay drivers, and voltage regulation.
- What is the thermal resistance junction-ambient of the 2STR1160?
The thermal resistance junction-ambient (Rthj-amb) is 250 °C/W.
- Is the 2STR1160 still in production?
No, the 2STR1160 is no longer manufactured by STMicroelectronics.
- What package type is used for the 2STR1160?
The 2STR1160 is packaged in a miniature SOT-23 plastic package for surface mounting circuits.
- What is the complementary PNP transistor for the 2STR1160?
The complementary PNP transistor is the 2STR2160.
- What technology is used to manufacture the 2STR1160?
The 2STR1160 is manufactured using the 'PB-HCD' (Power Bipolar High Current Density) technology.
- What are the turn-on and turn-off times of the 2STR1160?
The turn-on time (ton) is 220 ns, and the turn-off time (toff) is 500 ns.
