Overview
The 2N2222AUBG transistor, produced by STMicroelectronics, is an NPN bipolar junction transistor (BJT) designed for high-speed switching applications. It is part of the 2N2222A series, known for its reliability and performance in various electronic circuits. This transistor is particularly suited for use in harsh environments and is qualified according to the ESCC 5201/002 specification, making it suitable for space and high-reliability applications.
Key Specifications
| Parameter | Rating | Unit |
|---|---|---|
| Type | NPN Bipolar Junction Transistor (BJT) | |
| Maximum Collector Current | 800 mA | |
| Maximum Collector-Emitter Voltage | 40 V | |
| Maximum Collector-Base Voltage | 75 V | |
| Maximum Emitter-Base Voltage | 6 V | |
| Operating Junction Temperature Range | -65°C to 200°C | |
| Maximum Power Dissipation | 625 mW | |
| Transition Frequency | 300 MHz | |
| Common-Base Current Gain (hFE) | 110 (typical) | |
| Common-Emitter Current Gain (hFE) | 800 (typical) |
Key Features
- High-Speed Switching Capability: The 2N2222AUBG transistor has a transition frequency of 300 MHz, allowing it to switch on or off in less than 3 nanoseconds, making it suitable for high-speed applications.
- High Current Gain: It features a common-emitter current gain (hFE) of up to 800, providing significant current amplification.
- Low Saturation Voltage: The transistor has low saturation voltage, which is beneficial for reducing power consumption in switching applications.
- High Reliability: Qualified according to the ESCC 5201/002 specification, it is designed to operate in harsh environments and under radiation exposure.
Applications
The 2N2222AUBG transistor is suitable for a variety of applications, including:
- Space and Harsh Environment Applications: Due to its radiation hardness and compliance with ESCC specifications, it is ideal for use in space and other severe environment conditions.
- Low Current and High Precision Circuits: It is recommended for circuits such as preamplifiers, oscillators, and current mirror configurations where high precision and low current are required.
- High-Speed Switching Circuits: Its high transition frequency makes it suitable for high-speed switching applications.
Q & A
- What type of transistor is the 2N2222AUBG?
The 2N2222AUBG is an NPN bipolar junction transistor (BJT). - What is the maximum collector current of the 2N2222AUBG transistor?
The maximum collector current is 800 mA. - What is the maximum collector-emitter voltage rating of the 2N2222AUBG transistor?
The maximum collector-emitter voltage rating is 40 V. - What is the operating junction temperature range of the 2N2222AUBG transistor?
The operating junction temperature range is from -65°C to 200°C. - What is the transition frequency of the 2N2222AUBG transistor?
The transition frequency is 300 MHz. - What are the typical current gains of the 2N2222AUBG transistor?
The common-base current gain (hFE) is around 110, and the common-emitter current gain (hFE) is up to 800. - Is the 2N2222AUBG transistor suitable for space applications?
Yes, it is qualified according to the ESCC 5201/002 specification and is suitable for space and harsh environment applications. - What are some common applications of the 2N2222AUBG transistor?
It is used in preamplifiers, oscillators, current mirror configurations, and high-speed switching circuits. - What is the maximum power dissipation of the 2N2222AUBG transistor?
The maximum power dissipation is 625 mW. - What package types are available for the 2N2222AUBG transistor?
It is available in UB hermetic packages.
