RB751S-409HHTE61
  • Share:

Rohm Semiconductor RB751S-409HHTE61

Manufacturer No:
RB751S-409HHTE61
Manufacturer:
Rohm Semiconductor
Package:
Tape & Reel (TR)
Description:
DIODE SCHOTTKY SMD
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The RB751S-40 is a Schottky barrier diode produced by ROHM Semiconductor. This diode is designed for high-speed switching applications, circuit protection, and voltage clamping. It features an ultra-small mold type (EMD2) and is suitable for hand-held and portable applications where space is limited.

Key Specifications

Parameter Symbol Value Unit Conditions
Peak Reverse Voltage VRM 40 V
Reverse Voltage (DC) VR 30 V
Average Rectified Forward Current Io 30 mA
Forward Current Surge Peak IFSM 200 mA 60Hz/1 cycle
Junction Temperature Tj 125 °C
Storage Temperature Tstg -40 to +125 °C
Forward Voltage VF 0.37 V IF = 1 mA
Reverse Current IR 0.5 μA VR = 30 V
Capacitance between Terminals Ct 2 pF VR = 1 V, f = 1 MHz

Key Features

  • Ultra small mold type (EMD2)
  • Low forward voltage (VF) - 0.37 V (Max) @ IF = 1 mA
  • High reliability
  • Extremely fast switching speed
  • Low reverse current
  • Lead-free plating, RoHS compliant, and halogen-free/BFR-free
  • AEC-Q101 qualified and PPAP capable for automotive and other applications requiring unique site and control change requirements

Applications

  • High-speed switching applications
  • Circuit protection
  • Voltage clamping
  • Low current rectification
  • Hand-held and portable applications where space is limited

Q & A

  1. What is the peak reverse voltage of the RB751S-40?

    The peak reverse voltage (VRM) is 40 V.

  2. What is the average rectified forward current of the RB751S-40?

    The average rectified forward current (Io) is 30 mA.

  3. What is the forward voltage of the RB751S-40 at 1 mA?

    The forward voltage (VF) at 1 mA is 0.37 V (Max).

  4. What is the reverse current of the RB751S-40 at 30 V?

    The reverse current (IR) at 30 V is 0.5 μA (Max).

  5. What is the junction temperature range of the RB751S-40?

    The junction temperature range is -55 to +150°C.

  6. Is the RB751S-40 RoHS compliant?
  7. What package type is the RB751S-40 available in?

    The RB751S-40 is available in the SC-79 and SOD-523 package types.

  8. What are the typical applications of the RB751S-40?

    The RB751S-40 is typically used in high-speed switching applications, circuit protection, voltage clamping, and low current rectification.

  9. Is the RB751S-40 suitable for automotive applications?
  10. What is the storage temperature range of the RB751S-40?

    The storage temperature range is -40 to +125°C.

Product Attributes

Diode Type:- 
Voltage - DC Reverse (Vr) (Max):- 
Current - Average Rectified (Io):- 
Voltage - Forward (Vf) (Max) @ If:- 
Speed:- 
Reverse Recovery Time (trr):- 
Current - Reverse Leakage @ Vr:- 
Capacitance @ Vr, F:- 
Mounting Type:- 
Package / Case:- 
Supplier Device Package:- 
Operating Temperature - Junction:- 
0 Remaining View Similar

In Stock

-
223

Please send RFQ , we will respond immediately.

Same Series
DD15S20LVLX
DD15S20LVLX
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S10LVLS
DD15S10LVLS
CONN D-SUB HD RCPT 15POS CRIMP
DD15S20LT2S/AA
DD15S20LT2S/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S20Z0X/AA
DD15S20Z0X/AA
CONN D-SUB HD RCPT 15P SLDR CUP
CBC9W4S10HV3S/AA
CBC9W4S10HV3S/AA
CONN D-SUB RCPT 9POS CRIMP
DD15S20WV5S/AA
DD15S20WV5S/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD26S200E30/AA
DD26S200E30/AA
CONN D-SUB HD RCPT 26P SLDR CUP
CBC47W1S1S50V50
CBC47W1S1S50V50
CONN D-SUB RCPT 47POS CRIMP
DD15S20JVLS/AA
DD15S20JVLS/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD26S10HV30/AA
DD26S10HV30/AA
CONN D-SUB HD RCPT 26POS CRIMP
DD44S3200T2X
DD44S3200T2X
CONN D-SUB HD RCPT 44P VERT SLDR
DD26S20WT0/AA
DD26S20WT0/AA
CONN D-SUB HD RCPT 26P SLDR CUP

Related Product By Categories

STPS2150A
STPS2150A
STMicroelectronics
DIODE SCHOTTKY 150V 2A SMA
BAS20WTHE3-TP
BAS20WTHE3-TP
Micro Commercial Co
DIODE GEN PURP 150V 200MA SOT323
MURS120T3G
MURS120T3G
onsemi
DIODE GEN PURP 200V 1A SMB
BAS70L,315
BAS70L,315
Nexperia USA Inc.
DIODE SCHOT 70V 70MA DFN1006-2
PMEG4005EJ,115
PMEG4005EJ,115
Nexperia USA Inc.
DIODE SCHOTTKY 40V 500MA SOD323F
STPSC10H065D
STPSC10H065D
STMicroelectronics
DIODE SCHOTTKY 650V 10A TO220AC
BAS16-F2-0000HF
BAS16-F2-0000HF
Yangzhou Yangjie Electronic Technology Co.,Ltd
DIODE GEN PURP 75V 200MA SOT23
MURS140-13
MURS140-13
Diodes Incorporated
DIODE GEN PURP 400V 1A SMB
STTH30L06G
STTH30L06G
STMicroelectronics
DIODE GEN PURP 600V 30A D2PAK
BAT43 A0G
BAT43 A0G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 30V 200MA DO35
1N5821HA0G
1N5821HA0G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 30V 3A DO201AD
BAT54/LF1R
BAT54/LF1R
NXP USA Inc.
DIODE SCHOTTKY TO-236AB

Related Product By Brand

BAV99HYFHT116
BAV99HYFHT116
Rohm Semiconductor
HIGH SPEED SWITCHING, 80V, 215MA
BAT54SHMT116
BAT54SHMT116
Rohm Semiconductor
BAT54SHM IS SCHOTTKY BARRIER DIO
BAV170HMFHT116
BAV170HMFHT116
Rohm Semiconductor
SWITCHING DIODE (LOW LEAKAGE)
BAV99GT116
BAV99GT116
Rohm Semiconductor
DIODE GENERAL PURPOSE SMD
BAV99FT116
BAV99FT116
Rohm Semiconductor
DIODE GENERAL PURPOSE SMD
BZX84C36VLYT116
BZX84C36VLYT116
Rohm Semiconductor
250MW, 36V, SOT-23, ZENER DIODE
BZX84C20VLYFHT116
BZX84C20VLYFHT116
Rohm Semiconductor
250MW, 20V, SOT-23, AUTOMOTIVE Z
BZX84C11VLFHT116
BZX84C11VLFHT116
Rohm Semiconductor
DIODE ZENER 11V 250MW SSD3
BZX84B24VLT116
BZX84B24VLT116
Rohm Semiconductor
DIODE ZENER 24V 250MW SSD3
BC857BT116
BC857BT116
Rohm Semiconductor
TRANS PNP 45V 0.1A SST3
BC858BWT106
BC858BWT106
Rohm Semiconductor
TRANS PNP 30V 0.1A UMT3
LM324FJ-GE2
LM324FJ-GE2
Rohm Semiconductor
GROUND SENSE OPERATIONAL AMPLIFI