BAW56HYT116
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Rohm Semiconductor BAW56HYT116

Manufacturer No:
BAW56HYT116
Manufacturer:
Rohm Semiconductor
Package:
Tape & Reel (TR)
Description:
HIGH SPEED SWITCHING, 80V, 215MA
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BAW56HYT116 is a high-speed switching diode produced by ROHM Semiconductor. This component is part of ROHM's standard switching diode series and is designed for high reliability and performance in various electronic applications. The diode is configured as a dual common anode and is packaged in a SOT-23-3 surface mount package, making it suitable for a wide range of applications where compact size and high performance are required.

Key Specifications

Parameter Symbol Conditions Value Unit
Repetitive Peak Reverse Voltage VRM - 100 V
Reverse Voltage VR - 80 V
Average Forward Current IF Per diode 215 mA
Average Forward Current IF Per device 125 mA
Peak Forward Surge Current IFSM t=1μs 4000 mA
Forward Voltage VF IF=150mA 1.25 V
Reverse Current IR VR=80V, Tj=25℃ 0.1 μA
Reverse Recovery Time trr IF=IR=10mA, RL=100Ω 4 ns
Junction Temperature Tj - -150 ℃
Storage Temperature Tstg - -65 to 150 ℃
Power Dissipation PD Ta≦25℃ 250 mW
Capacitance between terminals Ct VR=0V, f=1.0MHz 2.0 pF

Key Features

  • High-Speed Switching: The BAW56HYT116 is designed for high-speed switching applications, featuring a reverse recovery time of 4ns.
  • Dual Common Anode Configuration: This diode is configured as a dual common anode, making it suitable for various circuit designs.
  • High Reliability: Packaged in a SOT-23-3 surface mount package, this diode offers high reliability and stability in different environmental conditions.
  • Compact Package: The SOT-23-3 package is compact and ideal for space-constrained applications.
  • Low Forward Voltage: The diode has a forward voltage of 1.25V at 150mA, ensuring efficient operation in low-voltage circuits.
  • Low Reverse Current: With a reverse current of 0.1μA at 80V, this diode minimizes leakage current and enhances overall circuit efficiency.

Applications

  • General Electronic Equipment: Suitable for use in AV equipment, OA equipment, telecommunication equipment, home electronic appliances, and amusement equipment.
  • Automotive Systems: Meets AEC-Q101 qualification standards, making it suitable for automotive applications where high reliability is crucial.
  • Industrial Control Systems: Can be used in various industrial control systems where high-speed switching and reliability are required.
  • Consumer Electronics: Ideal for use in consumer electronics such as smartphones, tablets, and other portable devices due to its compact size and high performance.

Q & A

  1. What is the repetitive peak reverse voltage of the BAW56HYT116?

    The repetitive peak reverse voltage (VRM) is 100V.

  2. What is the average forward current rating of the BAW56HYT116?

    The average forward current (IF) is 125mA per device.

  3. What is the reverse recovery time of the BAW56HYT116?

    The reverse recovery time (trr) is 4ns.

  4. What is the junction temperature range of the BAW56HYT116?

    The junction temperature (Tj) range is -150℃ to 150℃.

  5. What is the storage temperature range for the BAW56HYT116?

    The storage temperature (Tstg) range is -65℃ to 150℃.

  6. What is the power dissipation rating of the BAW56HYT116?

    The power dissipation (PD) is 250mW at Ta≦25℃.

  7. What is the capacitance between terminals of the BAW56HYT116?

    The capacitance between terminals (Ct) is 2.0pF at VR=0V and f=1.0MHz.

  8. Is the BAW56HYT116 suitable for automotive applications?

    Yes, it meets AEC-Q101 qualification standards, making it suitable for automotive applications.

  9. What is the package type of the BAW56HYT116?

    The package type is SOT-23-3 surface mount.

  10. What is the configuration of the BAW56HYT116?

    The configuration is dual common anode.

Product Attributes

Diode Configuration:1 Pair Common Anode
Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):80 V
Current - Average Rectified (Io) (per Diode):215mA (DC)
Voltage - Forward (Vf) (Max) @ If:1.25 V @ 150 mA
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):4 ns
Current - Reverse Leakage @ Vr:100 nA @ 80 V
Operating Temperature - Junction:150°C
Mounting Type:Surface Mount
Package / Case:TO-236-3, SC-59, SOT-23-3
Supplier Device Package:SOT-23
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Similar Products

Part Number BAW56HYT116 BAW156HYT116 BAW56HMT116
Manufacturer Rohm Semiconductor Rohm Semiconductor Rohm Semiconductor
Product Status Active Active Active
Diode Configuration 1 Pair Common Anode 1 Pair Common Anode 1 Pair Common Anode
Diode Type Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 80 V 80 V 80 V
Current - Average Rectified (Io) (per Diode) 215mA (DC) 215mA (DC) 215mA (DC)
Voltage - Forward (Vf) (Max) @ If 1.25 V @ 150 mA 1.25 V @ 150 mA 1.25 V @ 150 mA
Speed Fast Recovery =< 500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 4 ns 3 µs 4 ns
Current - Reverse Leakage @ Vr 100 nA @ 80 V 5 nA @ 75 V 100 nA @ 80 V
Operating Temperature - Junction 150°C 150°C 150°C (Max)
Mounting Type Surface Mount Surface Mount Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3
Supplier Device Package SOT-23 SOT-23 SSD3

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