TIP125GE
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Harris Corporation TIP125GE

Manufacturer No:
TIP125GE
Manufacturer:
Harris Corporation
Package:
Bulk
Description:
POWER BIPOLAR TRANSISTOR
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The TIP125GE, produced by Harris Corporation (now part of ON Semiconductor), is a PNP Darlington Power Transistor. This transistor is designed for general-purpose amplifier and low-speed switching applications. It is part of a family of complementary Darlington transistors that include the TIP120, TIP121, TIP122 (NPN types) and TIP125, TIP126, TIP127 (PNP types).

Key Specifications

Parameter Value Description
Transistor Type PNP Darlington Medium-power Darlington transistor
Collector-Emitter Voltage (VCE) 60 V Maximum collector-emitter voltage
Collector-Base Voltage (VCB) 60 V Maximum collector-base voltage
Emitter-Base Voltage (VBE) 5 V Maximum emitter-base voltage
Continuous Collector Current (IC) 5 A Continuous collector current
Peak Collector Current (IC) 8 A Peak collector current for short pulses
Base Current (IB) 120 mA Maximum base current
DC Current Gain (hFE) 1000 (typical) Typical DC current gain
Collector-Emitter Saturation Voltage (VCE(sat)) 2.0 V (max) @ IC = 3.0 Adc Maximum collector-emitter saturation voltage
Power Dissipation (Pd) 65 W Maximum power dissipation
Package Type TO-220AB Through-hole package type

Key Features

  • PNP Medium-power Darlington Transistor
  • High DC Current Gain (hFE) of typically 1000
  • Continuous Collector current (IC) of 5 A
  • Collector-Emitter voltage (VCE) of 60 V
  • Low Collector-Emitter Saturation Voltage (VCE(sat))
  • Monolithic Construction with Built-In Base-Emitter Shunt Resistors
  • Compact TO-220 AB Package
  • Pb-Free Packages are Available

Applications

The TIP125GE is suitable for a variety of medium and high-power electronics applications, including:

  • Controlling motors and solenoids
  • Driving high-power LEDs
  • General-purpose amplifier applications
  • Low-speed switching applications

Q & A

  1. What is the maximum collector-emitter voltage of the TIP125GE?

    The maximum collector-emitter voltage (VCE) is 60 V.

  2. What is the continuous collector current of the TIP125GE?

    The continuous collector current (IC) is 5 A.

  3. What is the peak collector current of the TIP125GE?

    The peak collector current is 8 A for short pulses.

  4. What is the typical DC current gain (hFE) of the TIP125GE?

    The typical DC current gain (hFE) is 1000.

  5. What is the maximum base current of the TIP125GE?

    The maximum base current (IB) is 120 mA.

  6. What is the collector-emitter saturation voltage (VCE(sat)) of the TIP125GE?

    The maximum collector-emitter saturation voltage (VCE(sat)) is 2.0 V at IC = 3.0 Adc.

  7. What package type is the TIP125GE available in?

    The TIP125GE is available in the TO-220AB package.

  8. Is the TIP125GE RoHS compliant?
  9. What are some common applications of the TIP125GE?
  10. Who are some of the manufacturers of the TIP125GE?

Product Attributes

Transistor Type:- 
Current - Collector (Ic) (Max):- 
Voltage - Collector Emitter Breakdown (Max):- 
Vce Saturation (Max) @ Ib, Ic:- 
Current - Collector Cutoff (Max):- 
DC Current Gain (hFE) (Min) @ Ic, Vce:- 
Power - Max:- 
Frequency - Transition:- 
Operating Temperature:- 
Mounting Type:- 
Package / Case:- 
Supplier Device Package:- 
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Similar Products

Part Number TIP125GE TIP125G
Manufacturer Harris Corporation onsemi
Product Status Active Obsolete
Transistor Type - PNP - Darlington
Current - Collector (Ic) (Max) - 5 A
Voltage - Collector Emitter Breakdown (Max) - 60 V
Vce Saturation (Max) @ Ib, Ic - 4V @ 20mA, 5A
Current - Collector Cutoff (Max) - 500µA
DC Current Gain (hFE) (Min) @ Ic, Vce - 1000 @ 3A, 3V
Power - Max - 2 W
Frequency - Transition - -
Operating Temperature - -65°C ~ 150°C (TJ)
Mounting Type - Through Hole
Package / Case - TO-220-3
Supplier Device Package - TO-220

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