Overview
The BC848BW_R1_00001 is an NPN general-purpose transistor manufactured by Panjit International Inc. This transistor is designed for a wide range of applications requiring low to medium power amplification and switching. It is part of the BC848 series, which includes various package types and configurations.
Key Specifications
| Parameter | Conditions | Typical Value | Minimum Value | Maximum Value | Unit |
|---|---|---|---|---|---|
| Collector-Base Breakdown Voltage (BVCBO) | VCE = 0, IC = 0 | - | 30 | - | V |
| Collector-Emitter Breakdown Voltage (BVCEO) | IC = 1 mA | - | 30 | - | V |
| Emitter-Base Breakdown Voltage (BVEBO) | IC = 0, IE = 0 | - | 5 | - | V |
| Collector Cutoff Current (ICBO) | VCE = 30 V, Ta = 25°C | - | - | 100 | nA |
| Base-Emitter Saturation Voltage (VBE(on)) | IC = 10 mA, IB = 0.5 mA | - | - | 0.77 | V |
| Collector-Emitter Saturation Voltage (VCE(sat)) | IC = 10 mA, IB = 0.5 mA | - | - | 0.58 | V |
| Transition Frequency (fT) | VCE = 5 V, IC = 10 mA, f = 100 MHz | - | - | 200 | MHz |
| DC Current Gain (hFE) | VCE = 5 V, IC = 10 mA | - | 100 | 450 | - |
| Package Type | - | - | - | SOT-323 (UMT3) | - |
Key Features
- High Collector-Emitter Breakdown Voltage: Up to 30V, making it suitable for various power amplification and switching applications.
- Low Collector-Emitter Saturation Voltage: Typically 0.58V, which reduces power consumption and heat generation.
- High Transition Frequency: Up to 200 MHz, enabling high-frequency operation.
- Compact Package: Available in SOT-323 (UMT3) package, ideal for space-constrained designs.
- Complementary Transistors: Complements the BC858B/BC858BW series, allowing for balanced circuit designs.
Applications
- General Purpose Amplification: Suitable for low to medium power amplification in audio, video, and other electronic circuits.
- Switching Circuits: Used in switching applications such as power supplies, motor control, and relay drivers.
- Automotive Electronics: Can be used in various automotive electronic systems due to its robust specifications.
- Consumer Electronics: Found in consumer electronics such as TVs, radios, and other household appliances.
Q & A
- What is the collector-emitter breakdown voltage of the BC848BW transistor?
The collector-emitter breakdown voltage (BVCEO) is typically 30V.
- What is the transition frequency of the BC848BW transistor?
The transition frequency (fT) is up to 200 MHz.
- What package type is the BC848BW transistor available in?
The BC848BW transistor is available in the SOT-323 (UMT3) package.
- What is the typical collector-emitter saturation voltage of the BC848BW transistor?
The typical collector-emitter saturation voltage (VCE(sat)) is 0.58V.
- What is the DC current gain (hFE) of the BC848BW transistor?
The DC current gain (hFE) ranges from 100 to 450.
- What are the complementary transistors for the BC848BW?
The BC848BW complements the BC858B/BC858BW series.
- What are some common applications of the BC848BW transistor?
Common applications include general-purpose amplification, switching circuits, automotive electronics, and consumer electronics.
- What is the emitter-base breakdown voltage of the BC848BW transistor?
The emitter-base breakdown voltage (BVEBO) is typically 5V.
- What is the collector cutoff current of the BC848BW transistor?
The collector cutoff current (ICBO) is typically less than 100 nA.
- How does the BC848BW transistor perform at different temperatures?
The transistor's performance, including DC current gain and other parameters, varies with temperature as shown in the datasheet.
