TLV272DR2G
  • Share:

onsemi TLV272DR2G

Manufacturer No:
TLV272DR2G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
IC OPAMP GP 2 CIRCUIT 8SOIC
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The TLV272DR2G is a dual-channel operational amplifier produced by onsemi. It is part of the TLV27x family, known for its rail-to-rail output operation, wide bandwidth, and low power consumption. This CMOS op-amp is designed to operate over a wide supply voltage range from 2.7 V to 16 V, making it suitable for various battery-operated applications. The device features high input impedance and low bias currents, making it ideal for interfacing with high-impedance sensors. Available in compact packages such as SOIC-8, it is well-suited for high-density PCB designs.

Key Specifications

Parameter Conditions Min Typ Max Unit
Supply Voltage (VDD) 2.7 16 V
Unity Gain Bandwidth (UGBW) RL = 2 kΩ, CL = 10 pF 3.2 3.5 MHz
Slew Rate (SR) VO(pp) = VDD/2, RL = 10 kΩ, CL = 50 pF 1.35 2.1 V/μs
Input Offset Voltage (VIO) VIC = VDD/2, VO = VDD/2, RL = 10 kΩ ±3 ±4 mV
Input Bias Current (IB) VDD = 5 V, VIC = VDD/2, VO = VDD/2 5 200 pA
Quiescent Current (IDD) Per channel, no load 405 525 700 μA
Operating Temperature Range (TA) -40 125 °C
Output Swing (High-level) VIC = VDD/2 0.013 0.20 0.25 V

Key Features

  • Rail-to-Rail Output: The TLV272DR2G offers rail-to-rail output operation, allowing the output to swing within 320 mV to the positive rail and 50 mV to the negative rail.
  • Wide Bandwidth: It features a unity gain bandwidth of 3 MHz, ensuring high-frequency performance.
  • High Slew Rate: With a slew rate of 2.4 V/μs, it supports fast signal transitions.
  • Wide Power-Supply Range: The op-amp can operate on supply voltages from 2.7 V to 16 V, making it versatile for various applications.
  • Low Supply Current: It consumes a low quiescent current of 550 μA per channel, suitable for battery-operated devices.
  • Low Input Bias Current: The device has a low input bias current of 45 pA, ideal for high-impedance sensor interfaces.
  • Compact Packages: Available in SOIC-8 and other compact packages, it is suitable for high-density PCB designs.

Applications

  • Battery-Operated Devices: The low power consumption and wide supply voltage range make it ideal for battery-operated applications.
  • High-Impedance Sensor Interfaces: The high input impedance and low bias currents make it suitable for interfacing with high-impedance sensors.
  • Automotive and Industrial Systems: The NCV prefix versions are AEC-Q100 qualified and PPAP capable, making them suitable for automotive and other demanding applications.
  • Micropower Microcontrollers: Compatible with the operating supply voltage range of many micropower microcontrollers, such as TI’s MSP430.

Q & A

  1. What is the supply voltage range of the TLV272DR2G?

    The TLV272DR2G can operate on supply voltages from 2.7 V to 16 V.

  2. What is the unity gain bandwidth of the TLV272DR2G?

    The unity gain bandwidth is 3 MHz.

  3. What is the slew rate of the TLV272DR2G?

    The slew rate is 2.4 V/μs.

  4. What is the quiescent current per channel of the TLV272DR2G?

    The quiescent current per channel is approximately 550 μA.

  5. What is the input bias current of the TLV272DR2G?

    The input bias current is typically 45 pA).

  6. What are the available packages for the TLV272DR2G?

    The TLV272DR2G is available in SOIC-8, PDIP-8, and VSSOP-8 packages).

  7. What is the operating temperature range of the TLV272DR2G?

    The operating temperature range is from -40°C to 125°C).

  8. Is the TLV272DR2G suitable for high-impedance sensor interfaces?

    Yes, due to its high input impedance and low bias currents, it is ideal for high-impedance sensor interfaces).

  9. Is the TLV272DR2G AEC-Q100 qualified?

    The NCV prefix versions are AEC-Q100 qualified and PPAP capable, making them suitable for automotive applications).

  10. What are some typical applications of the TLV272DR2G?

    Typical applications include battery-operated devices, high-impedance sensor interfaces, and systems requiring low power consumption and wide bandwidth).

Product Attributes

Amplifier Type:General Purpose
Number of Circuits:2
Output Type:Rail-to-Rail
Slew Rate:2.8V/µs
Gain Bandwidth Product:3 MHz
-3db Bandwidth:- 
Current - Input Bias:5 pA
Voltage - Input Offset:1.3 mV
Current - Supply:465µA
Current - Output / Channel:65 mA
Voltage - Supply Span (Min):2.7 V
Voltage - Supply Span (Max):36 V
Operating Temperature:-40°C ~ 125°C (TA)
Mounting Type:Surface Mount
Package / Case:8-SOIC (0.154", 3.90mm Width)
Supplier Device Package:8-SOIC
0 Remaining View Similar

In Stock

$1.17
139

Please send RFQ , we will respond immediately.

Same Series
DD15S2S5WV50/AA
DD15S2S5WV50/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S20LVLS
DD15S20LVLS
CONN D-SUB HD RCPT 15P SLDR CUP
DD26S20000/AA
DD26S20000/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S200E2X/AA
DD26S200E2X/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD26M20HE30/AA
DD26M20HE30/AA
CONN D-SUB HD PLUG 26P SLDR CUP
M24308/24-67Z
M24308/24-67Z
CONN D-SUB HD PLUG 15POS SLDR
DD26S10HE0/AA
DD26S10HE0/AA
CONN D-SUB HD RCPT 26POS CRIMP
DD15S20Z0S
DD15S20Z0S
CONN D-SUB HD RCPT 15P SLDR CUP
DD26S20W00/AA
DD26S20W00/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S20WT0/AA
DD26S20WT0/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD44S32S60V30
DD44S32S60V30
CONN D-SUB HD RCPT 44P VERT SLDR
DD26S20L0X
DD26S20L0X
CONN D-SUB HD RCPT 26P SLDR CUP

Similar Products

Part Number TLV272DR2G TLV274DR2G TLV272DMR2G
Manufacturer onsemi onsemi onsemi
Product Status Active Active Active
Amplifier Type General Purpose General Purpose General Purpose
Number of Circuits 2 4 2
Output Type Rail-to-Rail Rail-to-Rail Rail-to-Rail
Slew Rate 2.8V/µs 2.8V/µs 2.8V/µs
Gain Bandwidth Product 3 MHz 3 MHz 3 MHz
-3db Bandwidth - - -
Current - Input Bias 5 pA 5 pA 5 pA
Voltage - Input Offset 1.3 mV 1.3 mV 500 µV
Current - Supply 465µA 465µA 465µA (x2 Channels)
Current - Output / Channel 65 mA 65 mA 65 mA
Voltage - Supply Span (Min) 2.7 V 2.7 V 2.7 V
Voltage - Supply Span (Max) 36 V 36 V 36 V
Operating Temperature -40°C ~ 125°C (TA) -40°C ~ 125°C (TA) -40°C ~ 125°C (TA)
Mounting Type Surface Mount Surface Mount Surface Mount
Package / Case 8-SOIC (0.154", 3.90mm Width) 14-SOIC (0.154", 3.90mm Width) 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Supplier Device Package 8-SOIC 14-SOIC 8-MSOP

Related Product By Categories

AD8040ARUZ-REEL7
AD8040ARUZ-REEL7
Analog Devices Inc.
IC OPAMP GP 4 CIRCUIT 14TSSOP
LM324AM/NOPB
LM324AM/NOPB
Texas Instruments
IC OPAMP GP 4 CIRCUIT 14SOIC
INA240A2PW
INA240A2PW
Texas Instruments
IC CURR SENSE 1 CIRCUIT 8TSSOP
OPA380AID
OPA380AID
Texas Instruments
IC TRANSIMPEDANCE 1 CIRC 8SOIC
AD628ARZ
AD628ARZ
Analog Devices Inc.
IC CURRENT SENSE 1 CIRCUIT 8SOIC
TLC277IDR
TLC277IDR
Texas Instruments
IC CMOS 2 CIRCUIT 8SOIC
TLV4376IPWR
TLV4376IPWR
Texas Instruments
IC CMOS 4 CIRCUIT 14TSSOP
OP213FS
OP213FS
Analog Devices Inc.
IC OPAMP GP 2 CIRCUIT 8SOIC
AD8014ART-REEL7
AD8014ART-REEL7
Analog Devices Inc.
IC OPAMP CFA 1 CIRCUIT SOT23-5
INA326EA/250G4
INA326EA/250G4
Texas Instruments
IC INST AMP 1 CIRCUIT 8VSSOP
TL084ACDRG4
TL084ACDRG4
Texas Instruments
IC OPAMP JFET 4 CIRCUIT 14SOIC
TLC2262CPWRG4
TLC2262CPWRG4
Texas Instruments
IC CMOS 2 CIRCUIT 8TSSOP

Related Product By Brand

MMBZ5244BLT1G
MMBZ5244BLT1G
onsemi
DIODE ZENER 14V 225MW SOT23-3
MMSZ16T1G
MMSZ16T1G
onsemi
DIODE ZENER 16V 500MW SOD123
1N5353BRL
1N5353BRL
onsemi
DIODE ZENER 16V 5W AXIAL
MJD3055T4G
MJD3055T4G
onsemi
TRANS NPN 60V 10A DPAK
NJVMJD31T4G
NJVMJD31T4G
onsemi
TRANS NPN 40V 3A DPAK
NSS60600MZ4T3G
NSS60600MZ4T3G
onsemi
TRANS PNP 60V 6A SOT223
BD679G
BD679G
onsemi
TRANS NPN DARL 80V 4A TO126
BMS3004-1EX
BMS3004-1EX
onsemi
MOSFET P-CH TO220-3
MC33072DR2G
MC33072DR2G
onsemi
IC OPAMP JFET 2 CIRCUIT 8SOIC
MC74AC273DWR2G
MC74AC273DWR2G
onsemi
IC FF D-TYPE SNGL 8BIT 20SOIC
NSV45035JZT1G
NSV45035JZT1G
onsemi
IC REG CCR 45V 35MA SOT223
NCV57080BDR2G
NCV57080BDR2G
onsemi
ISOLATED HIGH CURRENT GATE DRIVE