Overview
The SZNUP1301ML3T1G is a low-capacitance diode array designed by onsemi for electrostatic discharge (ESD) protection in high-speed data lines. This device is part of the MicroIntegration family and is specifically engineered to safeguard sensitive components from harmful electrical transients. It is packaged in a SOT-23 (TO-236) case, making it compact and efficient for various applications. The SZNUP1301ML3T1G is AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other demanding environments.
Key Specifications
Characteristic | Symbol | Value | Unit |
---|---|---|---|
Reverse Voltage | VR | 70 | Vdc |
Forward Current | IF | 215 | mAdc |
Peak Forward Surge Current | IFM(surge) | 500 | mAdc |
Repetitive Peak Reverse Voltage | VRRM | 70 | V |
Average Rectified Forward Current | IF(AV) | 715 | mA |
Non-Repetitive Peak Forward Current (t = 1.0 μs) | IFSM | 2.0 | A |
Thermal Resistance Junction-to-Ambient | RθJA | 625 | °C/W |
Lead Solder Temperature (Maximum 10 Seconds Duration) | TL | 260 | °C |
Junction Temperature | TJ | -65 to 150 | °C |
Storage Temperature | Tstg | -65 to +150 | °C |
Diode Capacitance (between I/O and ground) | CD | 0.9 | pF |
Key Features
- Low Capacitance (0.9 pF Maximum)
- Single Package Integration Design
- Provides ESD Protection for JEDEC Standards JESD22 (Machine Model = Class C, Human Body Model = Class 3B)
- Protection for IEC61000-4-2 (Level 4): 8.0 kV (Contact), 15 kV (Air)
- Ensures Data Line Speed and Integrity
- Fewer Components and Less Board Space
- Directs the Transient to Either Positive Side or to the Ground
- SZ Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable
- Pb-Free Package is Available
Applications
- T1/E1 Secondary IC Protection
- T3/E3 Secondary IC Protection
- HDSL, IDSL Secondary IC Protection
- Video Line Protection
- Microcontroller Input Protection
- Base Stations
- I2C Bus Protection
Q & A
- What is the primary function of the SZNUP1301ML3T1G?
The primary function of the SZNUP1301ML3T1G is to provide electrostatic discharge (ESD) protection for high-speed data lines.
- What is the maximum reverse voltage rating for the SZNUP1301ML3T1G?
The maximum reverse voltage rating is 70 Vdc.
- What are the ESD protection standards met by this device?
The device meets JEDEC Standards JESD22 (Machine Model = Class C, Human Body Model = Class 3B) and IEC61000-4-2 (Level 4).
- What is the maximum diode capacitance of the SZNUP1301ML3T1G?
The maximum diode capacitance is 0.9 pF.
- What are the typical applications of the SZNUP1301ML3T1G?
Typical applications include T1/E1, T3/E3, HDSL, IDSL secondary IC protection, video line protection, microcontroller input protection, base stations, and I2C bus protection.
- Is the SZNUP1301ML3T1G suitable for automotive applications?
Yes, it is AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other demanding environments.
- What is the thermal resistance junction-to-ambient for this device?
The thermal resistance junction-to-ambient is 625 °C/W.
- What is the lead solder temperature maximum duration for the SZNUP1301ML3T1G?
The lead solder temperature maximum duration is 260 °C for 10 seconds.
- What is the junction temperature range for the SZNUP1301ML3T1G?
The junction temperature range is -65 to 150 °C.
- Is the SZNUP1301ML3T1G available in a Pb-Free package?
Yes, the device is available in a Pb-Free package.
- How does the SZNUP1301ML3T1G ensure data line speed and integrity?
The device ensures data line speed and integrity by employing low-capacitance diode arrays in a rail-to-rail configuration, which has low loading capacitance, fast response time, and inherent bidirectionality.