SMMBD914LT3G
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onsemi SMMBD914LT3G

Manufacturer No:
SMMBD914LT3G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
DIODE GEN PURP 100V 200MA SOT23
Delivery:
Payment:
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iso45001
iso9001
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Product Introduction

Overview

The SMMBD914LT3G is a high-speed switching diode produced by onsemi. This diode is designed for high-efficiency and fast recovery applications, making it suitable for a variety of electronic systems. It is packaged in a SOT-23 (TO-236) surface mount format, which is lead-free, halogen-free, and RoHS compliant. The device is AEC-Q101 qualified and PPAP capable, ensuring its reliability and suitability for automotive and other demanding applications.

Key Specifications

CharacteristicSymbolValueUnit
Reverse VoltageVR100V
Forward CurrentIF200mA
Non-Repetitive Peak Forward Surge CurrentIFSM1.0 A (t = 1 sec), 2.0 A (t = 1 μsec)A
Peak Forward Surge CurrentIFM(surge)500 mAmA
Reverse Breakdown VoltageV(BR)100Vdc
Reverse Voltage Leakage CurrentIR5.0 nAdc (VR = 75 Vdc)nAdc
Forward VoltageVF1.0Vdc
Reverse Recovery Timetrr4.0 nsns
Junction and Storage Temperature RangeTJ, Tstg-55 to +150°C
Thermal Resistance, Junction-to-AmbientRJA556 °C/W (FR-5 Board), 417 °C/W (Alumina Substrate)°C/W

Key Features

  • High-speed switching with a reverse recovery time of 4.0 ns.
  • Lead-free, halogen-free, and RoHS compliant.
  • AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other demanding applications.
  • Maximum reverse voltage of 100 V and forward current of 200 mA.
  • Low forward voltage drop of 1.0 V at 10 mA.
  • Wide operating temperature range from -55°C to +150°C.

Applications

The SMMBD914LT3G is versatile and can be used in various high-speed switching applications, including:

  • Automotive systems due to its AEC-Q101 qualification and PPAP capability.
  • High-frequency switching circuits where fast recovery times are crucial.
  • Power supply circuits requiring efficient and reliable diode performance.
  • General-purpose switching and rectification in electronic devices.

Q & A

  1. What is the maximum reverse voltage of the SMMBD914LT3G? The maximum reverse voltage is 100 V.
  2. What is the forward current rating of the SMMBD914LT3G? The forward current rating is 200 mA.
  3. What is the reverse recovery time of the SMMBD914LT3G? The reverse recovery time is 4.0 ns.
  4. Is the SMMBD914LT3G RoHS compliant? Yes, it is lead-free, halogen-free, and RoHS compliant.
  5. What is the operating temperature range of the SMMBD914LT3G? The operating temperature range is from -55°C to +150°C.
  6. Is the SMMBD914LT3G suitable for automotive applications? Yes, it is AEC-Q101 qualified and PPAP capable.
  7. What is the package type of the SMMBD914LT3G? It is packaged in a SOT-23 (TO-236) surface mount format.
  8. What is the forward voltage drop at 10 mA for the SMMBD914LT3G? The forward voltage drop at 10 mA is 1.0 V.
  9. What is the thermal resistance, junction-to-ambient, for the SMMBD914LT3G on an FR-5 board? The thermal resistance, junction-to-ambient, is 556 °C/W on an FR-5 board.
  10. What is the peak forward surge current rating for the SMMBD914LT3G? The peak forward surge current rating is 500 mA.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):100 V
Current - Average Rectified (Io):200mA (DC)
Voltage - Forward (Vf) (Max) @ If:1 V @ 10 mA
Speed:Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr):4 ns
Current - Reverse Leakage @ Vr:5 µA @ 75 V
Capacitance @ Vr, F:4pF @ 0V, 1MHz
Mounting Type:Surface Mount
Package / Case:TO-236-3, SC-59, SOT-23-3
Supplier Device Package:SOT-23-3 (TO-236)
Operating Temperature - Junction:-55°C ~ 150°C
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In Stock

$0.37
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SMMBD914LT3G
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Similar Products

Part Number SMMBD914LT3G SMMBD914LT1G
Manufacturer onsemi onsemi
Product Status Active Active
Diode Type Standard Standard
Voltage - DC Reverse (Vr) (Max) 100 V 100 V
Current - Average Rectified (Io) 200mA (DC) 200mA (DC)
Voltage - Forward (Vf) (Max) @ If 1 V @ 10 mA 1 V @ 10 mA
Speed Small Signal =< 200mA (Io), Any Speed Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr) 4 ns 4 ns
Current - Reverse Leakage @ Vr 5 µA @ 75 V 5 µA @ 75 V
Capacitance @ Vr, F 4pF @ 0V, 1MHz 4pF @ 0V, 1MHz
Mounting Type Surface Mount Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3
Supplier Device Package SOT-23-3 (TO-236) SOT-23-3 (TO-236)
Operating Temperature - Junction -55°C ~ 150°C -55°C ~ 150°C

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