Overview
The SBAS70-04LT1G is a dual series Schottky barrier diode produced by onsemi. This component is designed for high-speed switching applications, circuit protection, and voltage clamping. It features an extremely low forward voltage, which reduces conduction loss, making it ideal for applications where efficiency and speed are critical. The miniature surface mount package (SOT-23) is particularly suitable for handheld and portable devices where space is limited. The device is Pb-free, halogen-free/BFR-free, and RoHS compliant, ensuring environmental sustainability and compliance with regulatory standards.
Key Specifications
Characteristic | Symbol | Value | Unit |
---|---|---|---|
Reverse Voltage | VR | 70 | V |
Forward Current | IF | 70 | mA |
Non-Repetitive Peak Forward Surge Current (t ≤ 1.0 s) | IFSM | 100 | mA |
Forward Power Dissipation @ TA = 25°C | PF | 225 mW | mW |
Derate above 25°C | 1.8 mW/°C | mW/°C | |
Thermal Resistance Junction-to-Ambient | RJA | 508 °C/W (Note 1), 311 °C/W (Note 2) | °C/W |
Operating Junction and Storage Temperature Range | TJ, Tstg | -55 to +150 °C | °C |
Reverse Breakdown Voltage (IR = 10 μA) | V(BR)R | 70 V | V |
Total Capacitance (VR = 0 V, f = 1.0 MHz) | CT | 2.0 pF | pF |
Reverse Leakage (VR = 50 V, VR = 70 V) | IR | 0.1 μA, 10 μA | μA |
Forward Voltage (IF = 1.0 mA, IF = 10 mA, IF = 15 mA) | VF | 410 mV, 750 mV, 1000 mV | mV |
Note 1: FR-4 @ minimum pad. Note 2: FR-4 @ 1.0 x 1.0 in pad.
Key Features
- Extremely fast switching speed, making it suitable for high-speed applications.
- Low forward voltage, which reduces conduction loss and improves efficiency.
- Miniature surface mount package (SOT-23), ideal for handheld and portable devices.
- AEC-Q101 qualified and PPAP capable, suitable for automotive and other applications requiring unique site and control change requirements.
- Pb-free, halogen-free/BFR-free, and RoHS compliant, ensuring environmental sustainability.
Applications
- High-speed switching applications.
- Circuit protection.
- Voltage clamping.
- Handheld and portable devices where space is limited.
- Automotive and other applications requiring high reliability and compliance with automotive standards.
Q & A
- What is the primary use of the SBAS70-04LT1G Schottky barrier diode?
The SBAS70-04LT1G is primarily used for high-speed switching applications, circuit protection, and voltage clamping.
- What is the maximum reverse voltage rating for the SBAS70-04LT1G?
The maximum reverse voltage rating is 70 V.
- What is the forward current rating for the SBAS70-04LT1G?
The forward current rating is 70 mA.
- What is the non-repetitive peak forward surge current rating for the SBAS70-04LT1G?
The non-repetitive peak forward surge current rating is 100 mA for t ≤ 1.0 s.
- What is the thermal resistance junction-to-ambient for the SBAS70-04LT1G?
The thermal resistance junction-to-ambient is 508 °C/W (FR-4 @ minimum pad) and 311 °C/W (FR-4 @ 1.0 x 1.0 in pad).
- What is the operating junction and storage temperature range for the SBAS70-04LT1G?
The operating junction and storage temperature range is -55 to +150 °C.
- Is the SBAS70-04LT1G RoHS compliant?
Yes, the SBAS70-04LT1G is Pb-free, halogen-free/BFR-free, and RoHS compliant.
- What package type does the SBAS70-04LT1G come in?
The SBAS70-04LT1G comes in a SOT-23 (TO-236) package.
- What are some typical applications for the SBAS70-04LT1G?
Typical applications include high-speed switching, circuit protection, voltage clamping, and use in handheld and portable devices.
- Is the SBAS70-04LT1G suitable for automotive applications?
Yes, the SBAS70-04LT1G is AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other applications requiring high reliability.
- What is the forward voltage drop for the SBAS70-04LT1G at different current levels?
The forward voltage drop is 410 mV at 1.0 mA, 750 mV at 10 mA, and 1000 mV at 15 mA.