Overview
The RURD660S9A-F085P is an ultrafast power rectifier diode manufactured by onsemi. This device is designed with soft recovery characteristics, making it ideal for high-speed switching applications. It features a low forward voltage drop and is constructed using silicon nitride passivated ion-implanted epitaxial planar technology. The diode is AEC-Q101 qualified and PPAP capable, ensuring its reliability and suitability for automotive and other demanding environments. It is also a Pb-free device, aligning with environmental regulations.
Key Specifications
| Parameter | Symbol | Min | Max | Unit | |
|---|---|---|---|---|---|
| Peak Repetitive Reverse Voltage | VRRM | - | - | 600 | V |
| Working Peak Reverse Voltage | VRWM | - | - | 600 | V |
| DC Blocking Voltage | VR | - | - | 600 | V |
| Average Rectified Forward Current | IF(AV) | - | - | 6 | A |
| Non-repetitive Peak Surge Current | IFSM | - | - | 60 | A |
| Operating Junction and Storage Temperature | TJ, TSTG | -55 | - | 175 | °C |
| Forward Voltage | VFM | - | 1.26 | 1.5 | V |
| Reverse Recovery Time | trr | - | 63 | 83 | ns |
| Instantaneous Reverse Current | IR | - | - | 100 | μA |
| Avalanche Energy | WAVL | - | - | 10 | mJ |
Key Features
- High Speed Switching: Reverse recovery time (trr) of 63 ns (typical) at IF = 6 A and di/dt = 200 A/μs.
- Low Forward Voltage: VF = 1.26 V (typical) at IF = 6 A.
- Avalanche Energy Rated: Capable of withstanding high avalanche energy, ensuring robustness in demanding applications.
- AEC-Q101 Qualified and PPAP Capable: Meets automotive industry standards for reliability and quality.
- Pb-Free Device: Compliant with environmental regulations.
- Ultrafast Soft Recovery: Minimizes ringing and electrical noise in power switching circuits, reducing power loss in switching transistors.
Applications
- Switching Mode Power Supplies: Ideal for use in SMPS due to its high-speed switching and low forward voltage drop.
- Power Switching Circuits: Suitable for freewheeling/clamping diode and rectifier roles in various power switching applications.
- General Purpose Rectification: Can be used in a variety of general-purpose rectification applications requiring high speed and low forward voltage).
Q & A
- What is the peak repetitive reverse voltage of the RURD660S9A-F085P?
The peak repetitive reverse voltage (VRRM) is 600 V).
- What is the average rectified forward current rating of this diode?
The average rectified forward current (IF(AV)) is 6 A).
- What is the typical reverse recovery time of the RURD660S9A-F085P?
The typical reverse recovery time (trr) is 63 ns at IF = 6 A and di/dt = 200 A/μs).
- Is the RURD660S9A-F085P AEC-Q101 qualified?
- What is the maximum operating junction temperature of this diode?
The maximum operating junction temperature (TJ) is 175°C).
- What is the typical forward voltage drop of the RURD660S9A-F085P?
The typical forward voltage drop (VF) is 1.26 V at IF = 6 A).
- Is the RURD660S9A-F085P a Pb-free device?
- What is the non-repetitive peak surge current rating of this diode?
The non-repetitive peak surge current (IFSM) is 60 A).
- What are the common applications of the RURD660S9A-F085P?
- What is the avalanche energy rating of the RURD660S9A-F085P?
