RHRG30120
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onsemi RHRG30120

Manufacturer No:
RHRG30120
Manufacturer:
onsemi
Package:
Tube
Description:
DIODE GEN PURP 1200V 30A TO247-2
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The RHRG30120 is a hyperfast diode produced by onsemi, characterized by its soft recovery characteristics and ultrafast recovery times. This diode is designed to offer high performance in various power management and conversion applications. It features silicon nitride passivation, enhancing its reliability and durability. The RHRG30120 is packaged in a TO-247-2 case, making it suitable for a wide range of industrial and commercial uses.

Key Specifications

ParameterValue
Package / CaseTO-247-2
Peak Reverse Voltage (V_RRM)1200 V
Maximum Forward Current (I_F)30 A
Maximum Surge Current (I_FS)300 A

Key Features

  • Hyperfast recovery time, similar to ultrafast diodes
  • Soft recovery characteristics, reducing EMI and noise
  • Silicon nitride passivation for enhanced reliability
  • High peak reverse voltage of 1200 V
  • Maximum forward current of 30 A
  • Maximum surge current of 300 A

Applications

The RHRG30120 hyperfast diode is suitable for various high-power applications, including:

  • Power supplies and converters
  • Motor drives and control systems
  • Renewable energy systems
  • Industrial power management systems
  • Automotive and aerospace power systems

Q & A

  1. What is the peak reverse voltage of the RHRG30120 diode? The peak reverse voltage is 1200 V.
  2. What is the maximum forward current of the RHRG30120? The maximum forward current is 30 A.
  3. What is the package type of the RHRG30120? The package type is TO-247-2.
  4. What are the key features of the RHRG30120 diode? It has hyperfast recovery time, soft recovery characteristics, and silicon nitride passivation.
  5. What are some typical applications of the RHRG30120 diode? It is used in power supplies, motor drives, renewable energy systems, industrial power management, and automotive/aerospace power systems.
  6. What is the maximum surge current of the RHRG30120? The maximum surge current is 300 A.
  7. Why is silicon nitride passivation important in the RHRG30120? Silicon nitride passivation enhances the reliability and durability of the diode.
  8. How does the RHRG30120 reduce EMI and noise? It reduces EMI and noise through its soft recovery characteristics.
  9. What is the significance of hyperfast recovery time in the RHRG30120? The hyperfast recovery time improves the efficiency and performance in high-frequency applications.
  10. Where can I find detailed specifications and datasheets for the RHRG30120? Detailed specifications and datasheets can be found on the onsemi website, Mouser Electronics, and other authorized distributors.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):1200 V
Current - Average Rectified (Io):30A
Voltage - Forward (Vf) (Max) @ If:3.2 V @ 30 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):85 ns
Current - Reverse Leakage @ Vr:250 µA @ 1200 V
Capacitance @ Vr, F:- 
Mounting Type:Through Hole
Package / Case:TO-247-2
Supplier Device Package:TO-247-2
Operating Temperature - Junction:-65°C ~ 175°C
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Similar Products

Part Number RHRG30120 RHRP30120 RHRG30100
Manufacturer onsemi onsemi Harris Corporation
Product Status Active Active Active
Diode Type Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 1200 V 1200 V 1000 V
Current - Average Rectified (Io) 30A 30A 30A
Voltage - Forward (Vf) (Max) @ If 3.2 V @ 30 A 3.2 V @ 30 A 3 V @ 30 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 85 ns 85 ns 75 ns
Current - Reverse Leakage @ Vr 250 µA @ 1200 V 250 µA @ 1200 V 500 µA @ 1000 V
Capacitance @ Vr, F - - -
Mounting Type Through Hole Through Hole Through Hole
Package / Case TO-247-2 TO-220-2 TO-274AA
Supplier Device Package TO-247-2 TO-220-2L SUPER-247 (TO-274AA)
Operating Temperature - Junction -65°C ~ 175°C -65°C ~ 175°C -65°C ~ 175°C

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