NUP4201DR2G
  • Share:

onsemi NUP4201DR2G

Manufacturer No:
NUP4201DR2G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
TVS DIODE 5VWM 25VC 8-SOIC
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The NUP4201DR2G is a low capacitance surge protection diode array designed and manufactured by onsemi. This component is specifically engineered to protect sensitive electronics from damage caused by Electrostatic Discharge (ESD), Electrical Fast Transients (EFT), and lightning-induced surges. It is particularly suited for high-speed data interfaces and communication lines due to its low capacitance and high surge protection capabilities.

Key Specifications

Characteristic Symbol Min Typ Max Unit
Reverse Breakdown Voltage @ It = 1.0 mA VBR 6.0 - - V
Reverse Leakage Current @ VRWM = 5.0 Volts IR - - 10 μA μA
Peak Power Dissipation 8 x 20 μs @ TA = 25°C Ppk - - 500 W W
Junction and Storage Temperature Range TJ, Tstg -55 - 150 °C
Lead Solder Temperature - Maximum 10 Seconds Duration TL - - 260 °C
Capacitance Between I/O Pins and Ground @ DC Bias = 0 V, 1.0 MHz - - 5.0 10 pF
Capacitance Between I/O Pins and I/O @ DC Bias = 0 V, 1.0 MHz - - 2.5 5.0 pF

Key Features

  • Low capacitance design suitable for high-speed data interfaces.
  • SO-8 package with Pb-free option available.
  • High surge protection capabilities: ESD rating of 15 kV (air) and 8 kV (contact) according to IEC 61000-4-2, EFT rating of 40 A (5/50 ns) according to IEC 61000-4-4, and lightning rating of 25 A (8/20 μs) according to IEC 61000-4-5.
  • UL flammability rating of 94 V-0.
  • Integrated surge protection diode and steering diodes in a single package.
  • Ability to protect up to four data lines against transient overvoltage conditions.
  • Configurable protection options including reference to power supply rail or internal surge protection diode.

Applications

  • High-speed communication line protection.
  • USB power and data line protection.
  • Video line protection.
  • Base stations.
  • HDSL, IDSL secondary IC side protection.
  • Microcontroller input protection.
  • ESD protection for Ethernet ports (10/100 differential mode).
  • T1/E1 transceiver protection.

Q & A

  1. What is the primary function of the NUP4201DR2G?

    The primary function of the NUP4201DR2G is to protect sensitive electronics from damage caused by ESD, EFT, and lightning-induced surges, particularly in high-speed data interfaces.

  2. What is the package type of the NUP4201DR2G?

    The NUP4201DR2G comes in an SO-8 package.

  3. What are the ESD protection ratings of the NUP4201DR2G?

    The NUP4201DR2G has an ESD rating of 15 kV (air) and 8 kV (contact) according to IEC 61000-4-2.

  4. What is the peak power dissipation capability of the NUP4201DR2G?

    The peak power dissipation capability is 500 W for an 8 x 20 μs pulse at TA = 25°C.

  5. How many data lines can the NUP4201DR2G protect?

    The NUP4201DR2G can protect up to four data lines against transient overvoltage conditions.

  6. What are the typical applications of the NUP4201DR2G?

    Typical applications include high-speed communication line protection, USB power and data line protection, video line protection, base stations, HDSL, IDSL secondary IC side protection, and microcontroller input protection.

  7. How does the NUP4201DR2G reduce signal distortion?

    The NUP4201DR2G reduces signal distortion by biasing the steering diodes, which minimizes their capacitance and thus minimizes signal distortion.

  8. What is the UL flammability rating of the NUP4201DR2G?

    The UL flammability rating of the NUP4201DR2G is 94 V-0.

  9. Can the NUP4201DR2G be used in isolated power supply configurations?
  10. What are the recommended PCB design considerations for using the NUP4201DR2G?

    It is recommended to minimize PCB trace lengths and use a ground plane to reduce ground inductance.

Product Attributes

Type:Steering (Rail to Rail)
Unidirectional Channels:4
Bidirectional Channels:- 
Voltage - Reverse Standoff (Typ):5V
Voltage - Breakdown (Min):6V
Voltage - Clamping (Max) @ Ipp:25V
Current - Peak Pulse (10/1000µs):25A (8/20µs)
Power - Peak Pulse:500W
Power Line Protection:Yes
Applications:General Purpose
Capacitance @ Frequency:5pF @ 1MHz
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:8-SOIC (0.154", 3.90mm Width)
Supplier Device Package:8-SOIC
0 Remaining View Similar

In Stock

$1.51
29

Please send RFQ , we will respond immediately.

Same Series
NUP4201DR2
NUP4201DR2
TVS DIODE 5VWM 25VC 8-SOIC

Similar Products

Part Number NUP4201DR2G NUP4201DR2
Manufacturer onsemi onsemi
Product Status Active Obsolete
Type Steering (Rail to Rail) Steering (Rail to Rail)
Unidirectional Channels 4 4
Bidirectional Channels - -
Voltage - Reverse Standoff (Typ) 5V 5V
Voltage - Breakdown (Min) 6V 6V
Voltage - Clamping (Max) @ Ipp 25V 25V
Current - Peak Pulse (10/1000µs) 25A (8/20µs) 25A (8/20µs)
Power - Peak Pulse 500W 500W
Power Line Protection Yes Yes
Applications General Purpose General Purpose
Capacitance @ Frequency 5pF @ 1MHz 5pF @ 1MHz
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Package / Case 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package 8-SOIC 8-SOIC

Related Product By Categories

PESD5V0L1ULSYL
PESD5V0L1ULSYL
Nexperia USA Inc.
TVS DIODE 5VWM 12VC DFN1006-2
TPD4E1U06DBVR
TPD4E1U06DBVR
Texas Instruments
TVS DIODE 5.5VWM 15VC SOT23-6
ESD7551N2T5G
ESD7551N2T5G
onsemi
TVS DIODE 3.3VWM 13VC 2X2DFN
ESDLIN03-1BWY
ESDLIN03-1BWY
STMicroelectronics
TVS DIODE 26.5VWM 44VC SOT323-3
NUP2114UCMR6T1G
NUP2114UCMR6T1G
onsemi
TVS DIODE 5VWM 10VC 6TSOP
SM6T150A
SM6T150A
STMicroelectronics
TVS DIODE 128VWM 265VC SMB
SM6T47CAY
SM6T47CAY
STMicroelectronics
TVS DIODE 40VWM 84VC SMB
SM15T24AY
SM15T24AY
STMicroelectronics
TVS DIODE 20.5VWM 42.8VC SMC
SM15T12A-M3/9AT
SM15T12A-M3/9AT
Vishay General Semiconductor - Diodes Division
TVS DIODE 10.2VWM 16.7VC DO214AB
SM15T100A-E3/9AT
SM15T100A-E3/9AT
Vishay General Semiconductor - Diodes Division
TVS DIODE 85.5VWM 137VC DO214AB
SM6T220AHE3/52
SM6T220AHE3/52
Vishay General Semiconductor - Diodes Division
TVS DIODE 188VWM 328VC DO214AA
SM15T6V8CAHM3_A/I
SM15T6V8CAHM3_A/I
Vishay General Semiconductor - Diodes Division
TVS DIODE 5.8VWM 10.5VC DO214AB

Related Product By Brand

FFSH3065A
FFSH3065A
onsemi
650V 30A SIC SBD
MMSZ4690T1G
MMSZ4690T1G
onsemi
DIODE ZENER 5.6V 500MW SOD123
1SMB5927BT3
1SMB5927BT3
onsemi
DIODE ZENER 12V 3W SMB
MMBT3904LT1G
MMBT3904LT1G
onsemi
TRANS NPN 40V 0.2A SOT23-3
2N7002KW
2N7002KW
onsemi
MOSFET N-CH 60V 310MA SC70
NB3N502DR2G
NB3N502DR2G
onsemi
IC MULTIPLIER CLOCK PLL 8-SOIC
NCV2904VDR2G
NCV2904VDR2G
onsemi
IC OPAMP GP 2 CIRCUIT 8SOIC
MC74AC139DR2G
MC74AC139DR2G
onsemi
IC DECODER/DEMUX 1X2:4 16SOIC
UC3843AD1G
UC3843AD1G
onsemi
UC3843 CURRENT-MODE PWM CONTROLL
MC33275ST-5.0T3G
MC33275ST-5.0T3G
onsemi
IC REG LINEAR 5V 300MA SOT223
MC33375ST-3.0T3
MC33375ST-3.0T3
onsemi
IC REG LINEAR 3V 300MA SOT223
NCV57080BDR2G
NCV57080BDR2G
onsemi
ISOLATED HIGH CURRENT GATE DRIVE