Overview
The NSVPZTA92T1G is a high-voltage PNP silicon transistor manufactured by onsemi. This device is designed to meet the stringent requirements of automotive and other applications that necessitate unique site and control change requirements. It is AEC-Q101 qualified and PPAP capable, ensuring high reliability and performance in demanding environments. The transistor is also Pb-free, halogen-free/BFR-free, and RoHS compliant, aligning with modern environmental standards.
Key Specifications
| Rating | Symbol | Value | Unit |
|---|---|---|---|
| Collector-Emitter Voltage | VCEO | -300 | Vdc |
| Collector-Base Voltage | VCBO | -300 | Vdc |
| Emitter-Base Voltage | VEBO | -5.0 | Vdc |
| Collector Current | IC | -500 | mAdc |
| Total Power Dissipation (at TA = 25°C) | PD | 1.5 | W |
| Storage Temperature Range | Tstg | -65 to +150 | °C |
| Junction Temperature | TJ | 150 | °C |
| Thermal Resistance, Junction-to-Ambient | RθJA | 83.3 | °C/W |
Key Features
- Complement to PZTA42T1G, providing a matching pair for various circuit designs.
- NSV prefix indicates suitability for automotive and other applications requiring unique site and control change requirements.
- AEC-Q101 qualified and PPAP capable, ensuring high reliability in automotive and similar applications.
- Pb-free, halogen-free/BFR-free, and RoHS compliant, adhering to environmental regulations.
- High collector-emitter and collector-base breakdown voltages of -300 Vdc.
- DC current gain (hFE) ranges from 25 to 40 at different collector currents.
- Low saturation voltages (VCE(sat) and VBE(sat)) for efficient operation.
Applications
- Automotive systems: Suitable for various automotive applications due to its AEC-Q101 qualification and PPAP capability.
- High-voltage power supplies: The high breakdown voltages make it ideal for use in high-voltage power supply circuits.
- Switching and amplification: Can be used in both switching and amplification roles due to its high current gain and low saturation voltages.
- Industrial control systems: Reliable performance in industrial control systems where high voltage and current handling are necessary.
Q & A
- What is the maximum collector-emitter voltage of the NSVPZTA92T1G transistor?
The maximum collector-emitter voltage (VCEO) is -300 Vdc.
- Is the NSVPZTA92T1G transistor RoHS compliant?
Yes, the NSVPZTA92T1G transistor is Pb-free, halogen-free/BFR-free, and RoHS compliant.
- What is the thermal resistance of the NSVPZTA92T1G transistor?
The thermal resistance, junction-to-ambient (RθJA), is 83.3 °C/W.
- What are the storage temperature limits for the NSVPZTA92T1G transistor?
The storage temperature range is -65 to +150 °C.
- What is the maximum collector current of the NSVPZTA92T1G transistor?
The maximum collector current (IC) is -500 mA.
- Is the NSVPZTA92T1G transistor suitable for automotive applications?
Yes, it is AEC-Q101 qualified and PPAP capable, making it suitable for automotive and similar applications.
- What is the DC current gain (hFE) of the NSVPZTA92T1G transistor?
The DC current gain (hFE) ranges from 25 to 40 depending on the collector current.
- What is the package type of the NSVPZTA92T1G transistor?
The transistor is packaged in a SOT-223 (TO-261) surface mount package.
- What are the saturation voltages of the NSVPZTA92T1G transistor?
The saturation voltages (VCE(sat) and VBE(sat)) are typically around -0.5 V and -0.9 V respectively.
- What is the current-gain bandwidth product (fT) of the NSVPZTA92T1G transistor?
The current-gain bandwidth product (fT) is approximately 50 MHz.
