Overview
The NSVBAS21SLT1G is a dual series high-voltage switching diode produced by onsemi. This semiconductor device is characterized by its unidirectional conductivity, allowing it to conduct current under forward bias voltage and block current under reverse bias voltage. It is widely used in various applications requiring efficient rectification and high voltage handling. The diode is RoHS compliant, Pb-free, halogen-free, and BFR-free, making it suitable for environmentally friendly designs. It also meets AEC-Q101 qualifications and is PPAP capable, which is particularly important for automotive and other critical applications.
Key Specifications
| Characteristic | Symbol | Value | Unit |
|---|---|---|---|
| Continuous Reverse Voltage | VR | 250 | Vdc |
| Repetitive Peak Reverse Voltage | VRRM | 250 | Vdc |
| Peak Forward Current | IF | 225 | mAdc |
| Peak Forward Surge Current | IFM(surge) | 625 | mAdc |
| Forward Voltage (IF = 200 mAdc) | VF | 1.25 | mV |
| Reverse Recovery Time | trr | 50 | ns |
| Diode Capacitance (VR = 0, f = 1.0 MHz) | CD | 5.0 | pF |
| Junction and Storage Temperature Range | TJ, Tstg | -55 to +150 | °C |
| Thermal Resistance, Junction to Ambient (FR-5 Board) | RJA | 556 | °C/W |
| Thermal Resistance, Junction to Ambient (Alumina Substrate) | RJA | 417 | °C/W |
Key Features
- High Voltage Handling: The NSVBAS21SLT1G can withstand a continuous reverse voltage and repetitive peak reverse voltage of up to 250 Vdc.
- Low Forward Voltage Drop: The diode has a forward voltage drop of 1.25 V at 200 mA, ensuring efficient DC voltage output.
- Fast Reverse Recovery Time: With a reverse recovery time of 50 ns, this diode minimizes energy loss and heat generation in the circuit.
- Low Reverse Leakage Current: The diode features a low reverse leakage current of 100 µA at 200 Vdc, reducing energy consumption and heat.
- Wide Operating Temperature Range: The diode operates within a temperature range of -55°C to +150°C, making it suitable for various harsh environments.
- Environmental Compliance: The device is Pb-free, halogen-free, BFR-free, and RoHS compliant, aligning with environmental regulations.
- AEC-Q101 Qualified and PPAP Capable: Suitable for automotive and other critical applications requiring unique site and control change requirements.
Applications
- Signal Detector: Converts radio signals into DC electrical signals.
- Automotive Electronics: Used in alternator circuits to convert AC generated by the alternator to DC for charging the vehicle's battery.
- Battery Charger: Converts AC power from the power source into DC power to charge the battery.
- HVDC Transmission: Used in high-voltage direct current transmission systems for efficient long-distance transmission.
Q & A
- What is the maximum continuous reverse voltage of the NSVBAS21SLT1G diode?
The maximum continuous reverse voltage is 250 Vdc.
- What is the peak forward current rating of the NSVBAS21SLT1G?
The peak forward current rating is 225 mA.
- What is the reverse recovery time of the NSVBAS21SLT1G?
The reverse recovery time is 50 ns.
- Is the NSVBAS21SLT1G RoHS compliant?
- What is the operating temperature range of the NSVBAS21SLT1G?
- What are some common applications of the NSVBAS21SLT1G?
- What is the forward voltage drop at 200 mA for the NSVBAS21SLT1G?
- Is the NSVBAS21SLT1G AEC-Q101 qualified?
- What is the diode capacitance of the NSVBAS21SLT1G at 1 MHz?
- What is the thermal resistance of the NSVBAS21SLT1G on an FR-5 board?
