NDSH25170A
  • Share:

onsemi NDSH25170A

Manufacturer No:
NDSH25170A
Manufacturer:
onsemi
Package:
Tube
Description:
SIC JBS 1700V 25A TO247
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The onsemi NDSH25170A is a Silicon Carbide (SiC) Schottky Diode from the EliteSiC family. This diode utilizes advanced technology to provide superior switching performance and higher reliability compared to traditional silicon diodes. Key benefits include no reverse recovery current, temperature-independent switching characteristics, and excellent thermal performance. These features make SiC diodes the next generation of power semiconductors, offering highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size and cost.

Key Specifications

Parameter Value
Maximum Junction Temperature 175 °C
Avalanche Rating 506 mJ
Forward Voltage (Vf) 1.5 V @ 25 A
Forward Surge Current (Ifsm) 220 A
Reverse Current (Ir) 40 µA
Minimum Operating Temperature -55 °C
Maximum Average Forward Current (IF) 35 A
Package Type TO-247-2LD

Key Features

  • No reverse recovery current and no forward recovery
  • Temperature-independent switching characteristics
  • Excellent thermal performance
  • High surge current capacity
  • Low forward voltage drop (Vf) at high temperatures
  • Positive temperature coefficient

Applications

  • Industrial applications
  • UPS (Uninterruptible Power Supply) and ESS (Energy Storage Systems)
  • Solar power systems
  • Electric Vehicle (EV) chargers

Q & A

  1. What is the maximum junction temperature of the NDSH25170A?

    The maximum junction temperature is 175 °C.

  2. What is the avalanche rating of the NDSH25170A?

    The avalanche rating is 506 mJ.

  3. What is the forward voltage (Vf) of the NDSH25170A at 25 A?

    The forward voltage (Vf) is 1.5 V at 25 A.

  4. What is the forward surge current (Ifsm) of the NDSH25170A?

    The forward surge current (Ifsm) is 220 A.

  5. What is the minimum operating temperature of the NDSH25170A?

    The minimum operating temperature is -55 °C.

  6. What are the key benefits of using SiC Schottky diodes like the NDSH25170A?

    The key benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size and cost.

  7. What package type does the NDSH25170A come in?

    The NDSH25170A comes in a TO-247-2LD package.

  8. What are some typical applications for the NDSH25170A?

    Typical applications include industrial, UPS/ESS, solar power systems, and EV chargers.

  9. Does the NDSH25170A have reverse recovery current?

    No, the NDSH25170A does not have reverse recovery current.

  10. How does the NDSH25170A perform thermally?

    The NDSH25170A has excellent thermal performance.

Product Attributes

Diode Type:Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max):1700 V
Current - Average Rectified (Io):25A
Voltage - Forward (Vf) (Max) @ If:1.75 V @ 25 A
Speed:No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr):0 ns
Current - Reverse Leakage @ Vr:40 µA @ 1700 V
Capacitance @ Vr, F:2025pF @ 1V, 100kHz
Mounting Type:Through Hole
Package / Case:TO-247-2
Supplier Device Package:TO-247-2
Operating Temperature - Junction:-55°C ~ 175°C
0 Remaining View Similar

In Stock

$26.71
6

Please send RFQ , we will respond immediately.

Same Series
DD15S2S5WV5X/AA
DD15S2S5WV5X/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD44S320000
DD44S320000
CONN D-SUB HD RCPT 44P VERT SLDR
DD15S200T2S
DD15S200T2S
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S20Z00/AA
DD15S20Z00/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD26M20HE20/AA
DD26M20HE20/AA
CONN D-SUB HD PLUG 26P SLDR CUP
CBC13W3S10HE2S/AA
CBC13W3S10HE2S/AA
CONN D-SUB RCPT 13POS CRIMP
CBC46W4S10G00/AA
CBC46W4S10G00/AA
CONN D-SUB RCPT 46POS CRIMP
CBC9W4S10HV5S/AA
CBC9W4S10HV5S/AA
CONN D-SUB RCPT 9POS CRIMP
DD26S2S50V3X/AA
DD26S2S50V3X/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD44S32S600X/AA
DD44S32S600X/AA
CONN D-SUB HD RCPT 44P VERT SLDR
DD26S20WE2X/AA
DD26S20WE2X/AA
CONN D-SUB HD RCPT 26P SLDR CUP
CBC47W1S1S50V5S
CBC47W1S1S50V5S
CONN D-SUB RCPT 47POS CRIMP

Related Product By Categories

1N4001G-T
1N4001G-T
Diodes Incorporated
DIODE GEN PURP 50V 1A DO41
STTH5L06RL
STTH5L06RL
STMicroelectronics
DIODE GEN PURP 600V 5A DO201AD
BAS20-E3-18
BAS20-E3-18
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 150V 200MA SOT23
STTH1R02RL
STTH1R02RL
STMicroelectronics
DIODE GEN PURP 200V 1.5A DO41
MUR180EG
MUR180EG
onsemi
DIODE GEN PURP 800V 1A AXIAL
STTH2R02AFY
STTH2R02AFY
STMicroelectronics
DIODE GEN PURP 200V 2A SOD128
STPS2H100AFN
STPS2H100AFN
STMicroelectronics
100 V, 2 A POWER SCHOTTKY RECTIF
1N5711UR-1E3
1N5711UR-1E3
Microchip Technology
SCHOTTKY BARRIER DIODE MELF SURF
BAT720-F2-0000HF
BAT720-F2-0000HF
Yangzhou Yangjie Electronic Technology Co.,Ltd
DIODE SCHOTTKY 40V 500MA SOT23
MUR820
MUR820
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 200V 8A TO220AC
1N4148TR_S00Z
1N4148TR_S00Z
onsemi
DIODE GEN PURP 100V 200MA DO35
BAT43 A0
BAT43 A0
Taiwan Semiconductor Corporation
DIODE SCHOTTKY DO-35

Related Product By Brand

SZESD7461N2T5G
SZESD7461N2T5G
onsemi
TVS DIODE 16VWM 39VC 2XDFN
1SMB5918BT3G
1SMB5918BT3G
onsemi
DIODE ZENER 5.1V 3W SMB
FDG6332C
FDG6332C
onsemi
MOSFET N/P-CH 20V SC70-6
2SK4177-DL-1E
2SK4177-DL-1E
onsemi
MOSFET N-CH 1500V 2A TO263-2
PCA9654EDTR2G
PCA9654EDTR2G
onsemi
IC I/O EXPANDER 8BIT I2C 16TSSOP
NCP1252ADR2G
NCP1252ADR2G
onsemi
IC OFFLINE SWITCH MULT TOP 8SOIC
NCP302045MNTWG
NCP302045MNTWG
onsemi
IC PWR DRIVER P-CHAN 2:1 31PQFN
LM2931CTG
LM2931CTG
onsemi
IC REG LIN POS ADJ 100MA TO220-5
MC7812BTG
MC7812BTG
onsemi
IC REG LINEAR 12V 1A TO220AB
MC7808BTG
MC7808BTG
onsemi
IC REG LINEAR 8V 1A TO220AB
NCV57080BDR2G
NCV57080BDR2G
onsemi
ISOLATED HIGH CURRENT GATE DRIVE
FOD817A3SD
FOD817A3SD
onsemi
OPTOISOLATOR 5KV TRANSISTOR 4SMD