NDSH25170A
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onsemi NDSH25170A

Manufacturer No:
NDSH25170A
Manufacturer:
onsemi
Package:
Tube
Description:
SIC JBS 1700V 25A TO247
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The onsemi NDSH25170A is a Silicon Carbide (SiC) Schottky Diode from the EliteSiC family. This diode utilizes advanced technology to provide superior switching performance and higher reliability compared to traditional silicon diodes. Key benefits include no reverse recovery current, temperature-independent switching characteristics, and excellent thermal performance. These features make SiC diodes the next generation of power semiconductors, offering highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size and cost.

Key Specifications

Parameter Value
Maximum Junction Temperature 175 °C
Avalanche Rating 506 mJ
Forward Voltage (Vf) 1.5 V @ 25 A
Forward Surge Current (Ifsm) 220 A
Reverse Current (Ir) 40 µA
Minimum Operating Temperature -55 °C
Maximum Average Forward Current (IF) 35 A
Package Type TO-247-2LD

Key Features

  • No reverse recovery current and no forward recovery
  • Temperature-independent switching characteristics
  • Excellent thermal performance
  • High surge current capacity
  • Low forward voltage drop (Vf) at high temperatures
  • Positive temperature coefficient

Applications

  • Industrial applications
  • UPS (Uninterruptible Power Supply) and ESS (Energy Storage Systems)
  • Solar power systems
  • Electric Vehicle (EV) chargers

Q & A

  1. What is the maximum junction temperature of the NDSH25170A?

    The maximum junction temperature is 175 °C.

  2. What is the avalanche rating of the NDSH25170A?

    The avalanche rating is 506 mJ.

  3. What is the forward voltage (Vf) of the NDSH25170A at 25 A?

    The forward voltage (Vf) is 1.5 V at 25 A.

  4. What is the forward surge current (Ifsm) of the NDSH25170A?

    The forward surge current (Ifsm) is 220 A.

  5. What is the minimum operating temperature of the NDSH25170A?

    The minimum operating temperature is -55 °C.

  6. What are the key benefits of using SiC Schottky diodes like the NDSH25170A?

    The key benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size and cost.

  7. What package type does the NDSH25170A come in?

    The NDSH25170A comes in a TO-247-2LD package.

  8. What are some typical applications for the NDSH25170A?

    Typical applications include industrial, UPS/ESS, solar power systems, and EV chargers.

  9. Does the NDSH25170A have reverse recovery current?

    No, the NDSH25170A does not have reverse recovery current.

  10. How does the NDSH25170A perform thermally?

    The NDSH25170A has excellent thermal performance.

Product Attributes

Diode Type:Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max):1700 V
Current - Average Rectified (Io):25A
Voltage - Forward (Vf) (Max) @ If:1.75 V @ 25 A
Speed:No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr):0 ns
Current - Reverse Leakage @ Vr:40 µA @ 1700 V
Capacitance @ Vr, F:2025pF @ 1V, 100kHz
Mounting Type:Through Hole
Package / Case:TO-247-2
Supplier Device Package:TO-247-2
Operating Temperature - Junction:-55°C ~ 175°C
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